SAVANTIC 2N6702

SavantIC Semiconductor
Product Specification
2N6702
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·Fast switching speed
·Low collector saturation voltage
APPLICATIONS
·Designed for converters,inverters,
pulse-width-modulated regulators
and a variety of power switching
circuits.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
140
V
VCEO
Collector-emitter voltage
Open base
90
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
7
A
ICM
Collector current-peak
10
A
IB
Base current
6
A
PT
Total power dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
VALUE
2.5
UNIT
/W
SavantIC Semiconductor
Product Specification
2N6702
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=10mA ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=5A;IB=0.5A
0.8
V
VCEsat-2
Collector-emitter saturation voltage
IC=7A;IB=0.7A
1.5
V
VBE sat
Base-emitter saturation voltage
IC=5A;IB=0.5A
1.5
V
ICEV
Collector cut-off current
VCE=140V;VBE=1.5V
TC=125
0.1
1.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE-1
DC current gain
IC=0.2A ; VCE=2V
30
hFE-2
DC current gain
IC=5A ; VCE=2V
20
Cob
Output capacitance
IE=0 ; f=0.1MHz,VCB=10V
50
150
pF
fT
Transition frequency
IC=0.5A ; VCE=10V
50
200
MHz
2
MIN
TYP.
MAX
90
UNIT
V
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2N6702