SavantIC Semiconductor Product Specification MJ410 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High collector-emitter voltage ·Low collector saturation voltage APPLICATIONS ·Designed for medium to high voltage inverters, converters, regulators and switching circuits. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2 A PC Collector power dissipation 100 W Tj Junction temperature -65~150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX UNIT 0.75 /W SavantIC Semiconductor Product Specification MJ410 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCE(sat) Collector-emitter saturation voltage IC=1A; IB=0.1A 0.8 V VBE(sat) Base-emitter saturation voltage IC=1A; IB=0.1A 1.2 V ICEX Collector cut-off current VCB=100V; VEB=-1.5V;TC=125 0.5 mA ICEO Collector cut-off current VCE=200V; IB=0 0.25 mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 30 hFE-2 DC current gain IC=2.5A ; VCE=5V 10 Transition frequency IC=0.2A ; VCE=10V;f=1.0MHz 2.5 fT CONDITIONS 2 MIN TYP. MAX 200 UNIT V 90 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 MJ410