BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 — 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] f VDS PL(AV) PL(p) Gp ηD (MHz) (V) (W) (W) (dB) (%) 3400 to 3600 28 18.5 130 13 ACPR885k ACPR1980k (dBc) (dBc) 21.5 −47.5[2] −65[2] [1] Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz. [2] Measured within 30 kHz bandwidth. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V and an IDq of 1050 mA: n Qualified up to a maximum VDS operation of 32 V n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation n Internally matched for ease of use n Low gold plating thickness on leads n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 1.3 Applications n RF power amplifiers for base stations and multicarrier applications in the 3400 MHz to 3600 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G38-100 (SOT502A) 1 drain 2 gate 3 source 1 1 [1] 3 2 2 3 sym112 BLF6G38LS-100 (SOT502B) 1 drain 2 gate 3 source 1 1 [1] 3 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G38-100 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLF6G38LS-100 - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 34 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C BLF6G38-100_6G38LS-100_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 November 2008 2 of 12 BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL(AV) = 18.5 W BLF6G38-100 Type BLF6G38LS-100 Typ Unit 0.58 K/W 0.43 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C per section; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.6 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 180 mA 1.4 2 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 26.5 33 - A IGSS gate leakage current VGS = +11 V; VDS = 0 V - - 450 nA gfs forward transconductance VDS = 10 V; ID = 6.3 A - 12 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 6.3 A - 0.09 0.15 Ω Crs feedback capacitance VGS =0 V; VDS = 28 V; f = 1 MHz - 2.6 - pF 7. Application information Table 7. Application information Mode of operation: 1-carrier N-CDMA; Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF; Channel bandwidth is 1.23 MHz; f1 = 3400 MHz; f2 = 3500 MHz; f3 = 3600 MHz; RF performance at VDS = 28 V; IDq = 1050 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. Symbol Parameter Conditions Min Typ Max Unit PL(AV) average output power PL(AV) = 18.5 W 110 130 - W Gp power gain PL(AV) = 18.5 W 11.5 13 - dB RLin input return loss PL(AV) = 18.5 W - −10 - dB ηD drain efficiency PL(AV) = 18.5 W 18.5 21.5 - % ACPR885k adjacent channel power ratio (885 kHz) PL(AV) = 18.5 W [1] - −47.5 −45 dBc PL(AV) = 18.5 W [1] - −65 −63 dBc ACPR1980k adjacent channel power ratio (1980 kHz) [1] Measured within 30 kHz bandwidth. 7.1 Ruggedness in class-AB operation The BLF6G38-100 and BLF6G38LS-100 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1050 mA; PL = PL(1dB); f = 3600 MHz. BLF6G38-100_6G38LS-100_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 November 2008 3 of 12 BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame; frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8; FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46; number of subchannels = 30; PAR = 9.5 dB. Preamble: 1 symbol × 30 subchannels; PL = PL(nom) + 3.86 dB. Table 8. Frame structure Modulation technique Data length Zone 0 Frame contents FCH 2 symbols × 4 subchannels QPSK1/2 3 bit Zone 0 data 2 symbols × 26 subchannels 64QAM3/4 692 bit Zone 0 data 44 symbols × 30 subchannels 64QAM3/4 10000 bit 7.2.2 Graphs 001aaj033 10 EVM (%) 001aaj034 18 40 ηD (%) GP (dB) 8 16 30 14 20 6 4 GP 12 10 2 ηD 0 10−1 1 10 10−1 102 10 VDS = 28 V; IDq = 1050 mA; f = 3500 MHz. EVM as a function of load power; typical values VDS = 28 V; IDq = 1050 mA; f = 3500 MHz. Fig 2. Power gain and drain efficiency as function of average load power; typical values BLF6G38-100_6G38LS-100_1 Product data sheet 0 102 10 PL(AV) (W) PL (W) Fig 1. 1 © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 November 2008 4 of 12 BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 001aaj036 −25 ACPR10M ACPR (dBc) −35 −45 ACPR20M −55 ACPR30M −65 10−1 1 102 10 PL(AV) (W) VDS = 28 V; IDq = 1050 mA; f = 3500 MHz. Fig 3. Adjacent channel power ratio as a function of average load power; typical values 7.3 Single carrier NA IS-95 broadband performance at 2 W average 7.3.1 Graphs 001aaj037 16 25 ηD (%) GP (dB) 24 14 GP ACPR (dBc) −50 12 23 10 22 21 8 3450 3500 ACPR885k (1) (2) ACPR1500k (1) (2) ACPR1980k (2) (1) −60 ηD 6 3400 001aaj039 −40 20 3600 3550 −70 3400 3440 3480 3520 f (MHz) VDS = 28 V; IDq = 1050 mA; Single Carrier IS-95; PAR = 9.7 dB at 0.01 % probability. 3560 3600 f (MHz) VDS = 28 V; IDq = 1050 mA; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability. (1) Low frequency component (2) High frequency component Fig 4. Power gain and drain efficiency as function of frequency; typical values Fig 5. Adjacent channel power ratio as a function of frequency; typical values BLF6G38-100_6G38LS-100_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 November 2008 5 of 12 BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 001aaj041 18 40 ηD (%) GP (dB) 16 001aaj042 −35 ACPR (dBc) −45 30 ηD −55 14 (1) (2) 20 −65 ACPR885k (2) (1) GP 12 10 −75 ACPR1500k (1) (2) ACPR1980k 10 1 0 102 10 −85 10−1 1 102 10 PL(AV) (W) PL(AV) (W) VDS = 28 V; IDq = 1050 mA; f = 3500 MHz; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz. VDS = 28 V; IDq = 1050 mA; f = 3500 MHz; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz; IBW = 30 kHz. (1) Low frequency component (2) High frequency component Fig 6. Power gain and drain efficiency as function of load power; typical values Fig 7. 001aaj043 15 GP (dB) 001aaj045 3 Pi (W) (1) (2) (3) 13 Adjacent channel power ratio as a function of load power; typical values 2 (1) (2) (3) 11 1 9 7 10−1 1 0 10−1 102 10 VDS = 28 V; IDq = 1050 mA; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz. (1) f = 3400 MHz (2) f = 3500 MHz (2) f = 3500 MHz (3) f = 3600 MHz (3) f = 3600 MHz Power gain as a function of load power; typical values Fig 9. Input power as a function of load power; typical values BLF6G38-100_6G38LS-100_1 Product data sheet 102 10 VDS = 28 V; IDq = 1050 mA; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz. (1) f = 3400 MHz Fig 8. 1 PL (W) PL (W) © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 November 2008 6 of 12 BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 8. Test information C9 C6 C10 R3 L1 C8 C4 R1 C5 C7 C3 R2 C1 C11 C2 BLF6G38-100 BLF6G38-100 Input Rev 2 30RF35 NXP Output Rev 2 30RF35 NXP PCB1 PCB2 001aaj048 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit Table 9. List of components For test circuit, see Figure 10. Component Description Value Remarks C1, C4, C5, C11 multilayer ceramic chip capacitor 10 pF ATC 100A C2 multilayer ceramic chip capacitor 0.2 pF ATC 100A C3 multilayer ceramic chip capacitor 4.7 µF; 50 V TDK C4532X7R1H475M C6, C7 multilayer ceramic chip capacitor 100 nF Vishay VJ1206Y104KXB C8 multilayer ceramic chip capacitor 10 µF; 50V TDK C5750X7R1H106M C9 multilayer ceramic chip capacitor 1.5 µF; 50V TDK C3225X7R1H155M C10 electrolytic capacitor 470 µF; 63 V L1 ferrite SMD bead - R1, R2, R3 SMD resistor 9.1 Ω Table 10. Measured test circuit impedances f Zi Zo (GHz) (Ω) (Ω) 3.4 0.34 + j3.36 0.44 + j3.39 3.5 0.52 + j3.86 0.56 + j3.91 3.6 1.36 + j4.85 1.38 + j5.11 BLF6G38-100_6G38LS-100_1 Product data sheet SMD 1206 © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 November 2008 7 of 12 BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 11. Package outline SOT502A BLF6G38-100_6G38LS-100_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 November 2008 8 of 12 BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 12. Package outline SOT502B BLF6G38-100_6G38LS-100_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 November 2008 9 of 12 BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 10. Abbreviations Table 11. Abbreviations Acronym Description CCDF Complementary Cumulative Distribution Function EVM Error Vector Magnitude FCH Frame Control Header FFT Fast Fourier Transform IBW Instantaneous BandWidth IS-95 Interim Standard 95 LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor NA North American N-CDMA Narrowband Code Division Multiple Access PAR Peak-to-Average power Ratio PUSC Partial Usage SubChannels RF Radio Frequency QAM Quadrature Amplitude Modulation QPSK Quadrature Phase Shift Keying SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio WCS Wireless Communications Service WiMAX Worldwide Interoperability for Microwave Access 11. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G38-100_6G38LS-100_1 20081111 Product data sheet - - BLF6G38-100_6G38LS-100_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 November 2008 10 of 12 NXP Semiconductors BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF6G38-100_6G38LS-100_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 November 2008 11 of 12 NXP Semiconductors BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 NXP WiMAX signal . . . . . . . . . . . . . . . . . . . . . . 4 WiMAX signal description . . . . . . . . . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Single carrier NA IS-95 broadband performance at 2 W average . . . . . . . . . . . . . . 5 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 November 2008 Document identifier: BLF6G38-100_6G38LS-100_1