PHILIPS BLL6H0514-25

BLL6H0514-25
LDMOS driver transistor
Rev. 04 — 30 March 2010
Product data sheet
1. Product profile
1.1 General description
25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1.
Application information
Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.
Mode of operation
pulsed RF
f
tp
δ
VDS
PL
Gp
RLin
ηD
Pdroop(pulse)
tr
tf
(MHz)
(μs)
(%)
(V)
(W)
(dB)
(dB)
(%)
(dB)
(ns)
(ns)
960 to 1215
128
10
50
25
21
10
58
0.05
8
6
1200 to 1400
300
10
50
25
19
10
50
0.05
8
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„
„
„
„
„
„
„
„
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (0.5 GHz to 1.4 GHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
„ Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
BLL6H0514-25
NXP Semiconductors
LDMOS driver transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain
2
gate
3
source
Simplified outline
Graphic symbol
1
1
[1]
3
2
3
2
[1]
sym112
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
BLL6H0514-25
Package
Name
Description
Version
-
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
SOT467C
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
100
V
VGS
gate-source voltage
−0.5
+13
V
ID
drain current
-
2.5
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
200
°C
Typ
Unit
tp = 100 μs; δ = 10 %
0.86
K/W
tp = 200 μs; δ = 10 %
1.11
K/W
tp = 300 μs; δ = 10 %
1.29
K/W
tp = 100 μs; δ = 20 %
1.15
K/W
5. Thermal characteristics
Table 5.
BLL6H0514-25_4
Product data sheet
Thermal characteristics
Symbol
Parameter
Conditions
Zth(j-c)
transient thermal impedance from
junction to case
Tcase = 85 °C; PL = 25 W
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 30 March 2010
© NXP B.V. 2010. All rights reserved.
2 of 12
BLL6H0514-25
NXP Semiconductors
LDMOS driver transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 °C; per section unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 630 mA
Min
Typ
Max
Unit
110
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 18 mA
1.4
1.9
2.4
V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
1
μA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
2.1
2.5
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
100
nA
gfs
forward transconductance
VDS = 10 V; ID = 18 mA
120
150
-
mS
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 63 mA
-
1500 2750
mΩ
Table 7.
RF characteristics
Mode of operation: pulsed RF; tp = 128 μs; δ = 10 %; RF performance at VDS = 50 V; IDq = 50 mA;
f = 1.2 GHz; Tcase = 25 °C; unless otherwise specified, in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min Typ Max Unit
PL
output power
25
-
-
W
VDS
drain-source voltage
PL = 25 W
-
-
50
V
Gp
power gain
PL = 25 W
20
21
-
dB
RLin
input return loss
PL = 25 W
10
15
-
dB
ηD
drain efficiency
PL = 25 W
57
59
-
%
Pdroop(pulse)
pulse droop power
PL = 25 W
-
0
0.3
dB
tr
rise time
PL = 25 W
-
20
50
ns
tf
fall time
PL = 25 W
-
6
50
ns
6.1 Ruggedness in class-AB operation
The BLL6H0514-25 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V;
IDq = 50 mA; PL = 25 W; f = 1.2 GHz; tp = 128 μs; δ = 10 %.
BLL6H0514-25_4
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 30 March 2010
© NXP B.V. 2010. All rights reserved.
3 of 12
BLL6H0514-25
NXP Semiconductors
LDMOS driver transistor
7. Application information
7.1 Impedance information
Table 8.
Typical impedance
Typical values per section unless otherwise specified.
f
ZS
ZL
MHz
Ω
Ω
950
2.37 + j3.3
6.11 + j11.1
1000
2.44 + j2.65
7.00 + j16.0
1050
2.34 + j2.67
7.39 + j14.2
1100
2.56 + j2.06
7.0 + j16.0
1150
2.54 + j1.70
5.77 + j13.85
1200
2.25 + j1.29
7.39 + j14.2
1300
2.21 + j0.15
6.11 + j11.1
1400
2.46 − j0.52
5.00 + j10.0
drain
ZL
gate
ZS
001aaf059
Fig 1.
Definition of transistor impedance
7.2 Typical data
Table 9.
Application information
Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.
Mode of operation
pulsed RF
BLL6H0514-25_4
Product data sheet
f
tp
δ
VDS
PL
Gp
RLin
ηD
Pdroop(pulse)
tr
tf
(MHz)
(μs)
(%)
(V)
(W)
(dB)
(dB)
(%)
(dB)
(ns)
(ns)
960 to 1215
128
10
50
25
21
10
58
0.05
8
6
1200 to 1400
300
10
50
25
19
10
50
0.05
8
6
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 30 March 2010
© NXP B.V. 2010. All rights reserved.
4 of 12
BLL6H0514-25
NXP Semiconductors
LDMOS driver transistor
7.3 Application circuit
C4
C9
C6
C2
C3
C7
C5
C8
C10
C11
R1
C1
C12
001aak882
Printed-Circuit Board (PCB) material: Duroid 6006 with εr = 6.15 and thickness = 0.64 mm.
See Table 10 for list of components.
Fig 2.
Component layout
Table 10. List of components
See Figure 2 for component layout.
BLL6H0514-25_4
Product data sheet
Component
Description
Value
C1, C6, C7, C12
multilayer ceramic chip capacitor
56 pF
C2
multilayer ceramic chip capacitor
10 μF; 25 V
C3, C4, C8, C9
multilayer ceramic chip capacitor
100 pF
[1]
C5, C10
multilayer ceramic chip capacitor
1 nF
[2]
C11
electrolytic capacitor
68 μF; 63 V
R1
SMD resistor
10 Ω
[1]
American Technical Ceramics type 100A or capacitor of same quality.
[2]
American Technical Ceramics type 100B or capacitor of same quality.
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 30 March 2010
Remarks
[1]
SMD 0603
© NXP B.V. 2010. All rights reserved.
5 of 12
BLL6H0514-25
NXP Semiconductors
LDMOS driver transistor
8. Test information
8.1 Performance curves
001aak883
35
PL
(W)
30
(1)
(2)
001aak884
24
Gp
(dB)
(3)
(1)
25
(2)
16
(3)
20
15
8
10
5
0
0
0
200
400
600
0
5
10
Pi (mW)
VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %.
(1) f = 1200 MHz
(2) f = 1300 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(3) f = 1400 MHz
Load power as a function of input power;
typical values
BLL6H0514-25_4
Product data sheet
20
25
30
PL (W)
35
VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %.
(1) f = 1200 MHz
Fig 3.
15
Fig 4.
Power gain as a function of load power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 30 March 2010
© NXP B.V. 2010. All rights reserved.
6 of 12
BLL6H0514-25
NXP Semiconductors
LDMOS driver transistor
001aak885
70
001aak886
25
65
ηD
(%)
Gp
(dB)
ηD
(%) 60
(1)
50
ηD
23
55
(2)
(3)
21
40
45
Gp
30
19
35
17
25
20
10
15
1.15
0
0
5
10
15
20
25
30
PL (W)
35
1.25
15
1.45
1.35
f (GHz)
VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %.
VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 5.
Drain efficiency as a function of load power;
typical values
Fig 6.
Power gain and drain efficiency as function of
frequency; typical values
001aak887
25
RLin
(dB)
20
15
10
5
0
1.15
1.25
1.35
1.45
f (GHz)
PL = 25 W; VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %.
Fig 7.
BLL6H0514-25_4
Product data sheet
Input return loss as a function of frequency; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 30 March 2010
© NXP B.V. 2010. All rights reserved.
7 of 12
BLL6H0514-25
NXP Semiconductors
LDMOS driver transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT467C
D
A
F
3
D1
U1
B
q
c
C
1
E1
H
U2
E
A
w1 M A M B M
p
2
Q
w2 M C M
b
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
E
E1
F
H
p
Q
q
U1
U2
w1
w2
mm
4.67
3.94
5.59
5.33
0.15
0.10
9.25
9.04
9.27
9.02
5.92
5.77
5.97
5.72
1.65
1.40
18.54
17.02
3.43
3.18
2.21
1.96
14.27
20.45
20.19
5.97
5.72
0.25
0.51
inch
0.184 0.220 0.006
0.155 0.210 0.004
0.364 0.365
0.356 0.355
0.233
0.227
0.235 0.065
0.225 0.055
0.73
0.67
0.135 0.087
0.805 0.235
0.562
0.010 0.020
0.125 0.077
0.795 0.225
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
99-12-06
99-12-28
SOT467C
Fig 8.
EUROPEAN
PROJECTION
Package outline SOT467C
BLL6H0514-25_4
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 30 March 2010
© NXP B.V. 2010. All rights reserved.
8 of 12
BLL6H0514-25
NXP Semiconductors
LDMOS driver transistor
10. Abbreviations
Table 11.
Abbreviations
Acronym
Description
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
RF
Radio Frequency
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLL6H0514-25_4
20100330
Product data sheet
-
BLL6H0514-25_3
Modifications:
•
Figure 3 on page 6: the unit on the X-axis is corrected to mW.
BLL6H0514-25_3
20100223
Product data sheet
-
BLL6H0514-25_2
BLL6H0514-25_2
20090317
Objective data sheet
-
BLL6H0514-25_1
BLL6H0514-25_1
20090305
Objective data sheet
-
-
BLL6H0514-25_4
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 30 March 2010
© NXP B.V. 2010. All rights reserved.
9 of 12
BLL6H0514-25
NXP Semiconductors
LDMOS driver transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
BLL6H0514-25_4
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 30 March 2010
© NXP B.V. 2010. All rights reserved.
10 of 12
BLL6H0514-25
NXP Semiconductors
LDMOS driver transistor
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLL6H0514-25_4
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 30 March 2010
© NXP B.V. 2010. All rights reserved.
11 of 12
BLL6H0514-25
NXP Semiconductors
LDMOS driver transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
6.1
7
7.1
7.2
7.3
8
8.1
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 4
Typical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application circuit . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Performance curves . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 30 March 2010
Document identifier: BLL6H0514-25_4