SavantIC Semiconductor Product Specification 2SC3255 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA1291 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications ·Power amplifications ·Invertrers ,converters PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A ICM Collector current-peak 12 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3255 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector -emitter breakdown voltage IC=1mA ,IB=; 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ,IC=0 5 V Collector-emitter saturation voltage IC=5A; IB=0.25A 0.4 V ICBO Collector cut-off current VCB=40V; IE=0 100 µA IEBO Emitter cut-off current VEB=4V; IC=0 100 µA hFE DC current gain IC=1A ; VCE=2V Transition frequency IC=1A ; VCE=5V VCEsat fT CONDITIONS MIN TYP. 70 MAX UNIT 280 100 MHz 0.1 µs 0.5 µs 0.1 µs Switching times ton Turn-on time ts Storage time tf Fall time IC=5.0A IB1=- IB2=0.25A RL=6.67C;VCCD20V hFE Classifications Q R S 70-140 100-200 140-280 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SC3255 SavantIC Semiconductor Product Specification 2SC3255 Silicon NPN Power Transistors 4