SAVANTIC 2SD1236L

SavantIC Semiconductor
Product Specification
2SD1236L
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type 2SB920L
·Low collector saturation voltage
·Large current capacity.
APPLICATIONS
·Relay drivers,high speed inverters,
converters,and other general
high-current switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
90
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
5
A
ICM
Collector current-peak
9
A
PC
Collector dissipation
TC=25
30
W
1.75
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD1236L
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;RBE=;
80
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
90
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
6
V
Collector-emitter saturation voltage
IC=3A; IB=0.3A
0.4
V
ICBO
Collector cut-off current
VCB=80V; IE=0
100
µA
IEBO
Emitter cut-off current
VEB=4V; IC=0
100
µA
hFE-1
DC current gain
IC=1A ; VCE=2V
70
hFE-2
DC current gain
IC=3A ; VCE=2V
30
Transition frequency
IC=1A ; VCE=5V
VCEsat
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
280
20
MHz
0.1
µs
1.2
µs
0.4
µs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10IB1=-10IB2=2A
VCC=50V,RL=25C
hFE-1 Classifications
Q
R
S
70-140
100-200
140-280
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
2SD1236L
SavantIC Semiconductor
Product Specification
2SD1236L
Silicon NPN Power Transistors
4