VSK.56..PbF, VSK.71..PbF Series Vishay Semiconductors Standard Diodes, 60 A/80 A (ADD-A-PAK Generation 5 Power Modules) FEATURES • High voltage • Industrial standard package • Thick copper baseplate • UL E78996 approved • 3500 VRMS isolating voltage • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level ADD-A-PAK BENEFITS PRODUCT SUMMARY IF(AV) 60 A/80 A Type Modules - Diode, High Voltage • Up to 1600 V • Full compatible TO-240AA • High surge capability MECHANICAL DESCRIPTION • Easy mounting on heatsink The Generation 5 of ADD-A-PAK module combine the excellent thermal performance obtained by the usage of direct bonded copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation 5 of AAP module is manufactured without hard mold, eliminating any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other Vishay HPP modules. • Al2O3 DBC insulator • Heatsink grounded ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS 100 °C IF(RMS) IFSM I2t 50 Hz TJ TStg Document Number: 94358 Revision: 20-May-10 VSK.71 60 80 94 126 1600 1790 60 Hz 1680 1870 50 Hz 12.89 15.90 60 Hz 11.76 14.53 128.9 159 I2t VRRM VSK.56 Range UNITS A kA2s kA2s 400 to 1600 V - 40 to 150 °C For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 VSK.56..PbF, VSK.71..PbF Series Vishay Semiconductors Standard Diodes, 60 A/80 A (ADD-A-PAK Generation 5 Power Modules) ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 06 600 700 VSK.56 VSK.71 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 IRRM MAXIMUM AT 150 °C mA 10 FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature Maximum RMS forward current IF(AV) IF(RMS) TEST CONDITIONS 180° conduction, half sine wave DC at 92 °C case temperature t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I 2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t No voltage reapplied 100 % VRRM reapplied No voltage reapplied Sinusoidal half wave, intitial TJ = TJ maximum 100 % VRRM reapplied VSK.56 VSK.71 UNITS 60 80 A 100 100 °C 94 126 1600 1790 1680 1870 1350 1500 1420 1570 12.89 15.90 11.76 14.53 9.12 11.25 8.32 10.23 t = 0.1 ms to 10 ms, no voltage reapplied 128.9 159.0 Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.96 0.83 High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 1.03 0.92 A kA2s kA2s V Low level value of forward slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 2.81 2.68 High level value of forward slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 2.48 2.40 VFM IFM = x IF(AV), TJ = 25 °C, tp = 400 μs square wave 1.51 1.50 V SYMBOL TEST CONDITIONS VSK.56 VSK.71 UNITS m Maximum forward voltage drop BLOCKING PARAMETER Maximum peak reverse leakage current IRRM TJ = 150 °C RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 10 mA 3500 (1 s) V Document Number: 94358 Revision: 20-May-10 VSK.56..PbF, VSK.71..PbF Series Standard Diodes, 60 A/80 A Vishay Semiconductors (ADD-A-PAK Generation 5 Power Modules) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction and storage temperature range VALUES TEST CONDITIONS VSK.56 TJ, TStg VSK.71 - 40 to 150 Maximum thermal resistance, junction to case per junction RthJC DC operation Typical thermal resistance, case to heatsink RthCS Mounting surface flat, smooth and greased 0.5 UNITS °C 0.4 K/W 0.1 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. to heatsink Mounting torque ± 10 % busbar 5 Nm 4 Approximate weight Case style JEDEC 110 g 4 oz. ADD-A-PAK (TO-240AA) R CONDUCTION PER JUNCTION DEVICES SINE HALF WAVE CONDUCTION 180° 120° 90° 60° RECTANGULAR WAVE CONDUCTION 30° 180° 120° 90° 60° 30° VSK.56 0.11 0.13 0.16 0.22 0.32 0.09 0.14 0.17 0.23 0.32 VSK.71 0.06 0.08 0.11 0.14 0.21 0.06 0.09 0.11 0.15 0.21 UNITS °C/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94358 Revision: 20-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VSK.56..PbF, VSK.71..PbF Series Standard Diodes, 60 A/80 A (ADD-A-PAK Generation 5 Power Modules) Vishay Semiconductors 120 VSK.56.. Series RthJC (DC) = 0.5 K/W 140 Maximum Average Forward Power Loss (W) Maximum Allowable Case Tmperature (°C) 150 130 Ø Conduction angle 120 110 100 90° 60° 30° 90 0 10 20 30 40 120° 180° 50 60 80 Ø 40 Conduction period 20 VSK.56.. Series Per junction TJ = 150 °C 0 0 70 VSK.56.. Series RthJC (DC) = 0.5 K/W 140 1300 Ø Conduction period 120 110 30° 60° 100 90° 120° 90 0 20 40 60 DC 80 70 60 RMS limit Ø Conduction angle 20 VSK.56.. Series Per junction TJ = 150 °C 10 0 600 VSK.56.. Series Per junction 10 30 40 50 60 100 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 1200 1000 800 600 400 70 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics www.vishay.com 4 700 1400 40 20 800 1600 30 10 900 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 50 0 1000 1 Peak Half Sine Wave Forward Current (A) 80 100 400 Fig. 2 - Current Ratings Characteristics 180° 120° 90° 60° 30° 80 1100 100 Average Forward Current (A) 90 1200 500 180° 60 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 1400 130 40 Average Forward Current (A) Fig. 4 - Foward Power Loss Characteristics Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 20 1500 150 RMS limit 60 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Maximum Average Forward Power Loss (W) DC 180° 120° 90° 60° 30° 100 VSK.56.. Series Per junction 200 0.01 0.1 1.0 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94358 Revision: 20-May-10 VSK.56..PbF, VSK.71..PbF Series 120 120 100 100 80 180° (Sine) Maximum Total Forward Power Loss (W) Maximum Total Forward Power Loss (W) Standard Diodes, 60 A/80 A Vishay Semiconductors (ADD-A-PAK Generation 5 Power Modules) DC 60 40 VSK.56.. Series Per junction TJ = 150 °C 20 R 0.7 th SA K/ = W 1.0 80 1.5 0. 5 K/ W K/W -Δ R K/W 60 2.0 40 3.0 K 20 7.0 K/W K/W /W 0 0 0 20 40 60 80 0 100 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Total RMS Output Current (A) Fig. 7 - Forward Power Loss Characteristics 450 Maximum Total Power Loss (W) Maximum Total Power Loss (W) 450 400 + 180° (Sine) 180° (Rect) ~ 350 - 300 250 200 150 2 x VSK.56.. Series Single phase bridge Connected TJ = 150 °C 100 50 R th 400 SA 0.2 = K/ 0.3 300 250 0.5 200 150 0. 1 W 350 K/ W K/W -Δ R K/W 1.0 K /W 100 50 0 0 0 20 40 60 80 100 120 0 140 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Total Output Current (A) Fig. 8 - Forward Power Loss Characteristics 450 Maximum Total Power Loss (W) Maximum Total Power Loss (W) 450 + 400 ~ 350 - 300 120° (Rect) 250 200 150 3 x VSK.56.. Series Three phase bridge Connected TJ = 150 °C 100 50 R 400 th 0.3 350 SA = W 300 0.4 250 0.5 200 0.7 0. 1 K/ K/ W K/ W -Δ R K/W K/W 1.0 K /W 1.5 K/W 3.0 K/W 150 100 50 0 0 0 20 40 60 80 100 120 140 160 0 Total Output Current (A) 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 9 - Forward Power Loss Characteristics Document Number: 94358 Revision: 20-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 VSK.56..PbF, VSK.71..PbF Series Vishay Semiconductors 160 VSK.71.. Series RthJC (DC) = 0.4 K/W 140 130 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 Standard Diodes, 60 A/80 A (ADD-A-PAK Generation 5 Power Modules) Ø Conduction angle 120 110 30° 100 60° 90° 120° DC 180° 120° 90° 60° 30° 140 120 100 RMS limit 80 Ø 60 Conduction period 40 VSK.71.. Series Per junction TJ = 150 °C 20 180° 0 90 0 10 20 30 40 50 60 70 80 0 90 1600 VSK.71.. Series RthJC (DC) = 0.4 K/W 140 130 Ø Conduction period 120 110 100 120° 30° 90 0 20 40 60 180° 80 100 1 Conduction angle VSK.71.. Series Per junction TJ = 150 °C 20 0 40 50 60 70 1400 10 100 80 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150°C No voltage reapplied Rated VRRM reapplied 1200 1000 800 600 Average Forward Current (A) Fig. 12 - Forward Power Loss Characteristics www.vishay.com 6 Peak Half Sine Wave Forward Current (A) Ø 30 800 1600 40 20 140 1000 1800 RMS limit 10 120 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current 60 0 1200 140 180° 120° 90° 60° 30° 80 100 400 120 Fig. 11 - Current Ratings Characteristics 100 80 VSK.71.. Series Per junction DC Average Forward Current (A) 120 60 600 90° 60° 40 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 1400 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 150 Maximum Average Forward Power Loss (W) 20 Average Forward Current (A) Fig. 13 - Forward Power Loss Characteristics Average Forward Current (A) Fig. 10 - Current Ratings Characteristics 400 0.01 VSK.71.. Series Per junction 0.1 1.0 Pulse Train Duration (s) Fig. 15 - Maximum Non-Repetitive Surge Current For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94358 Revision: 20-May-10 VSK.56..PbF, VSK.71..PbF Series 160 160 140 140 Maximum Total Forward Power Loss (W) Maximum Total Forward Power Loss (W) Standard Diodes, 60 A/80 A Vishay Semiconductors (ADD-A-PAK Generation 5 Power Modules) 120 180° (Sine) 100 DC 80 60 40 VSK.71.. Series Per junction TJ = 150 °C 20 R th SA 0.7 120 100 0. 4 K/W 1.0 80 = K/ W -Δ R K/W 1.5 K/W 2.0 K/W 3.0 K /W 5.0 K/W 60 40 20 0 0 0 20 40 60 80 100 120 0 140 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Total RMS Output Current (A) Fig. 16 - Forwad Power Loss Characteristics 600 + 500 ~ - 400 Maximum Total Power Loss (W) Maximum Total Power Loss (W) 600 180° (Sine) 180° (Rect) 300 200 2 x VSK.71.. Series Single phase bridge Connected TJ = 150 °C 100 R th 500 SA 0.2 400 0.3 300 = 0. 1 K/W K/ W -Δ R K/W 0.5 200 K/W 1.0 K/W 100 2.0 K/W 0 0 0 40 80 120 160 0 200 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Total Output Current (A) Fig. 17 - Forward Power Loss Characteristics 600 ~ 100 400 0.3 R -Δ 3 x VSK.71.. Series Three phase bridge Connected TJ = 150 °C W W 200 K/ K/ 300 0.2 1 120° (Rect) 400 500 0. - = 500 SA Maximum Total Power Loss (W) + R th Maximum Total Power Loss (W) 600 K/W 300 0.4 200 0.7 K 100 1.5 K/W K/W /W 0 0 0 40 80 120 160 200 0 Total Output Current (A) 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 18 - Forward Power Loss Characteristics Document Number: 94358 Revision: 20-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 7 VSK.56..PbF, VSK.71..PbF Series Standard Diodes, 60 A/80 A (ADD-A-PAK Generation 5 Power Modules) 1000 100 Instantaneous Forward Current (A) Instantaneous Forward Current (A) Vishay Semiconductors TJ = 25 °C TJ = 150 °C VSK.56.. Series Per junction 10 0.5 1.0 1.5 2.0 2.5 3.0 1000 TJ = 25 °C 100 TJ = 150 °C VSK.71.. Series Per junction 10 0 3.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Instantaneous Forward Voltage (V) Instantaneous Forward Voltage (V) Fig. 19 - Forward Voltage Drop Characteristics Fig. 20 - Forward Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (K/W) 1 Steady state value: RthJC = 0.5 K/W RthJC = 0.4 K/W (DC operation) VSK.56.. Series VSK.71.. Series 0.1 Per junction 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 21 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VSK D 71 1 2 3 / 16 P 4 5 1 - Module type 2 - Circuit configuration (see Circuit Configuration table) 3 - Current code 4 - Voltage code (see Voltage Ratings table) 5 - P = Lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 www.vishay.com 8 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94358 Revision: 20-May-10 VSK.56..PbF, VSK.71..PbF Series Standard Diodes, 60 A/80 A Vishay Semiconductors (ADD-A-PAK Generation 5 Power Modules) CIRCUIT CONFIGURATION CIRCUIT CONFIGURATION CODE CIRCUIT DESCRIPTION CIRCUIT DRAWING VSKD... ~ + (1) Two diodes doubler circuit (2) (3) D 3 2 1 VSKC... + - Two diodes common cathodes (2) (1) (3) C 3 2 1 VSKJ... Two diodes common anodes + + (2) (1) (3) J 2 3 1 VSKE... + - (2) Single diode (3) E 2 3 1 LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94358 Revision: 20-May-10 www.vishay.com/doc?95015 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 9 Outline Dimensions Vishay Semiconductors ADD-A-PAK Diode 3 2 1 6.2 ± 0.2 (0.2 ± 0.0079) 21 ± 0.75 (0.8 ± 0.02953) 80 ± 0.3 (3.15 ± 0.0118) 24 ± 0.5 (1 ± 0.0197) 18 (0.7) REF. 6.3 ± 0.3 (0.2 ± 0.018) 29 ± 0.5 (1 ± 0.0197) Viti M5 x 0.8 Screws M5 x 0.8 35 REF. 30 ± 0.5 (1.18 ± 0.0197) DIMENSIONS in millimeters (inches) 15 ± 0.5 (0.59 ± 0.0197) 20 ± 0.5 (0.79 ± 0.0197) 20 ± 0.5 (0.79 ± 0.0197) 92 ± 0.75 (3.6 ± 0.02953) Document Number: 95015 Revision: 29-Sep-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1