ASI AM82731-001

AM82731-001
NPN RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE 400 2NL FLG
The AM82731-001 is a Common
Base Device Designed for Pulsed SBand Radar Amplifier Applications.
A
FEATURES INCLUDE:
.025 x 45°
4x .062 x 45°
2X B
• Input/Output Matching
• Gold Metallization
• Emitter Ballasting
ØD
C
E
F
G
H
L
0.45 A
VCC
34 V
PDISS
11.5 W @ TC = 25 °C
TJ
-65 °C to+250 °C
TSTG
-65 °C to+200 °C
θJC
13.0 °C/W
CHARACTERISTICS
IC = 1.0 mA
BVCER
IC = 1.0 mA
ICES
VCE = 30 V
BVEBO
IE = 1.0 mA
ηC
PG
Note:
.020 / 0.51
.030 / 0.76
B
.100 / 2.54
C
.376 / 9.55
D
.110 / 2.79
.130 / 3.30
E
.395 / 10.03
.407 / 10.34
.396 / 10.06
F
.193 / 4.90
G
.450 / 11.43
.125 / 3.18
I
.640 / 16.26
.660 / 16.76
K
J
.890 / 22.61
.910 / 23.11
K
.395 / 10.03
.415 / 10.54
L
.004 / 0.10
.007 / 0.18
M
.052 / 1.32
.072 / 1.83
N
.118 / 3.00
.131 / 3.33
N
.230 / 5.84
P
1 = COLLECTOR
TEST CONDITIONS
BVCBO
POUT
inches / mm
A
MAXIMUM
2 & 4 = BASE
3 = EMITTER
TC = 25 °C
SYMBOL
hFE
inches / mm
I
J
M
IC
MINIMUM
H
P
MAXIMUM RATINGS
DIM
VCE = 5 V
VCE = 30 V
RBE = 10 Ω
MINIMUM
TYPICAL MAXIMUM
45
V
45
V
0.5
IC = 100 mA
PIN = 0.3 W
f = 2.7 to 3.1 GHz
UNITS
mA
3.5
V
10
---
1.0
27
5.2
1.1
30
5.6
W
%
dB
Pulse Width = 100 μS
Duty Cycle = 10%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV.
1/1