SSM6K31FE Silicon P Channel MOS Type (Π-MOSⅦ) SSM6K31FE TENTATIVE ○ High speed switching ○ DC-DC Converter • small package • Low RDS (ON) Unit: mm : Ron = 240 mΩ (typ) (@VGS = 10 V) : Ron = 400 mΩ (typ) (@VGS = 4 V) Maximum Ratings (Ta = 25°C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±20 V DC ID 1.2 Pulse IDP 2.4 Drain current Drain power dissipation PD (Note 1) 1,2,5,6 3 4 A 500 mW : Drain : Gate : Source Channel temperature Tch 150 °C JEDEC ― Storage temperature Tstg −55~150 °C JEITA ― TOSHIBA Note 1:Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2) Marking Circuit (top view) 6 5 2-2N1A Weight: 3 mg (typ.) Equivalent 4 6 5 4 3 1 2 3 ＫB 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing and use containers and other objects that are made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area. When using this device, please take heat dissipation fully into account. 1 2003-12-19 SSM6K31FE Electrical Characteristics (Ta = 25°C) Characteristic Symbol Gate leakage current IGSS Drain-Source breakdown voltage V (BR) DSS IDSS Drain Cut-off current Vth Yfs Gate threshold voltage Forward transfer admittance Drain-Source ON resistance RDS (ON) Test Condition Min Typ. Max Unit VGS = ±16 V, VDS = 0 − − ±1 µA ID = 1 mA, VGS = 0 20 − − V − − 1 µA VDS = 20 V, VGS = 0 1.1 − 2.3 V VDS = 5 V, ID = 0.6 A (Note 2) 0.58 − − S ID = 0.6 A, VGS = 10 V (Note 2) − 240 320 ID = 0.6 A, VGS = 4 V (Note 2) − 400 540 VDS = 5 V, ID = 0.1 mA mΩ Ciss VDS = 10 V, VGS = 0, f = 1 MHz − 36 − pF Input capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz − 10 − pF Reverse transfer capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz − 30 − pF Switching time Turn-on time ton VDD = 10 V, ID = 0.6 A, − − − Turn-off time toff VGS = 0~4 V, RG = 10 Ω − − − ns Note 2:Pulse measurement Switching Time Test Circuit (a) Test circuit 4 V (b) VIN in 4V out 0V RG 0 10 µs VDD (c) VOUT VDD = 10 V RG = 10Ω < 1% Duty = VIN: tr, tf < 5 ns Common source Ta = 25°C 90% 10% VDD VDS (ON) 10% 90% tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 µA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. VGS recommended voltage of 4.0 V or higher to turn on this product. 2 2003-12-19 SSM6K31FE RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 3 2003-12-19