SSM6N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FU High Speed Switching Applications Analog Switching Applications Unit: mm · Small package · Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V DC ID 100 Pulse IDP 200 Drain current Drain power dissipation (Ta = 25°C) PD (Note) mA 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: Total rating Marking 6 Equivalent Circuit (top view) 5 4 6 2 4 ― JEITA ― TOSHIBA 2-2J1C Weight: 6.8 mg (typ.) Q1 DP 1 5 JEDEC Q2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2001-12-05 SSM6N15FU Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Gate leakage current Drain-Source breakdown voltage Drain cut-off current Test Condition Min Typ. Max Unit IGSS VGS = ±16 V, VDS = 0 ¾ ¾ ±1 mA V (BR) DSS ID = 0.1 mA, VGS = 0 30 ¾ ¾ V IDSS VDS = 30 V, VGS = 0 ¾ ¾ 1 mA Vth VDS = 3 V, ID = 0.1 mA 0.8 ¾ 1.5 V Forward transfer admittance ïYfsï VDS = 3 V, ID = 10 mA 25 ¾ ¾ mS Drain-Source ON resistance RDS (ON) ID = 10 mA, VGS = 4 V ¾ 2.2 4.0 ID = 10 mA, VGS = 2.5 V ¾ 4.0 7.0 ¾ 7.8 ¾ pF ¾ 3.6 ¾ pF ¾ 8.8 ¾ pF Gate threshold voltage Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time VDS = 3 V, VGS = 0, f = 1 MHz Turn-on time ton VDD = 5 V, ID = 10 mA, ¾ 50 ¾ Turn-off time toff VGS = 0~5 V ¾ 180 ¾ W ns Switching Time Test Circuit (b) VIN (a) Test circuit 5V OUT 5V 90% 0 10 ms RL 50 9 IN VDD 0V (c) VOUT VDD = 5 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 W) Common Source Ta = 25°C 10% VDD VDS (ON) 10% 90% tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of 2.5 V or higher to turn on this product. 2 2001-12-05 SSM6N15FU (Q1, Q2 Common) ID – VDS ID – VGS 250 1000 Common Source 4 3 100 2.7 ID 150 Drain current ID Drain current Common Source VDS = 3 V (mA) 10 (mA) 200 Ta = 25°C 2.5 100 2.3 50 Ta = 100°C 10 -25°C 25°C 1 0.1 VGS = 2.1 V 0 0 0.5 1 1.5 Drain-source voltage VDS 0.01 0 2 1 (V) 2 3 Gate-source voltage RDS (ON) – ID VGS 6 Common Source Common Source ID = 10 mA 5 8 Drain-source on resistance RDS (ON) (W) Drain-source on resistance RDS (ON) (W) Ta = 25°C VGS = 2.5 V 4 4V 2 4 Ta = 100°C 3 25°C 2 -25°C 1 0 0 40 80 120 Drain current ID 160 0 0 200 2 (mA) 4 1.8 6 5 VGS = 2.5 V 4 3 4V 2 1 0 -25 8 VGS 10 (V) Vth – Ta 2 Common Source ID = 10 mA Gate threshold voltage Vth (V) Drain-source on resistance RDS (ON) (W) 7 6 Gate-source voltage RDS (ON) – Ta 8 (V) RDS (ON) – VGS 10 6 4 1.6 Common Source ID = 0.1 mA VDS = 3 V 1.4 1.2 1 0.8 0.6 0.4 0.2 0 25 50 75 100 125 0 -25 150 Ambient temperature Ta (°C) 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 3 2001-12-05 SSM6N15FU (Q1, Q2 Common) ïYfsï – ID IDR – VDS 250 (mA) Common Source 500 V DS = 3 V 300 Ta = 25°C Drain reverse current IDR Forward transfer admittance ½Yfs½ (mS) 1000 100 50 30 10 5 3 1 0 10 100 Drain current ID 200 Common Source VGS = 0 V Ta = 25°C D 150 S 100 50 0 0 1000 IDR G -0.2 (mA) -0.4 -0.6 Drain-source voltage t – ID 3000 (ns) toff -1.4 (V) toff 1000 t tf 500 Switching time Switching time -1.2 Common Source VDD = 3 V VGS = 0~2.5 V Ta = 25°C 5000 t (ns) 3000 300 100 50 30 10 0.1 ton 500 tf 300 ton 100 tr 50 30 tr 1 10 Drain current ID 10 0.1 100 1 (mA) 10 Drain current (mW) 30 P D* 10 Power dissipation Ciss Coss 5 3 Crss 1 0.5 0.3 1 Drain-source voltage (mA) 250 Common Source VGS = 0 V f = 1 MHz Ta = 25°C 50 0.1 0.1 ID 100 PD* – Ta C – VDS 100 (pF) VDS 10000 Common Source VDD = 5 V VGS = 0~5 V Ta = 25°C 5000 Capacitance C -1 t – ID 10000 1000 -0.8 10 VDS 200 150 100 50 0 0 100 20 (V) 40 60 80 100 120 140 160 Ambient temperature Ta (°C) *: Total rating 4 2001-12-05 SSM6N15FU RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2001-12-05