VISHAY SIA414DJ-T1-GE3

New Product
SiA414DJ
Vishay Siliconix
N-Channel 8-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.011 at VGS = 4.5 V
12
0.013 at VGS = 2.5 V
12
0.016 at VGS = 1.8 V
12
0.022 at VGS = 1.5 V
12
0.041 at VGS = 1.2 V
12
VDS (V)
8
• Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
Qg (Typ.)
19 nC
RoHS
COMPLIANT
APPLICATIONS
• Load Switch for Portable Applications
PowerPAK SC-70-6L-Single
D
1
D
Marking Code
2
D
6
D
5
Part # code
2.05 mm
XXX
Lot Traceability
and Date code
S
D
S
G
ACX
3
G
S
2.05 mm
4
Ordering Information: SiA414DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IDM
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Continuous Source-Drain Diode Current
Soldering Recommendations (Peak Temperature)
ID
d, e
IS
PD
TJ, Tstg
Limit
8
±5
12a
12a
12a, b, c
11.6b, c
40
12a
2.9b, c
19
12
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
RthJA
t≤5s
28
36
Maximum Junction-to-Ambientb, f
°C/W
RthJC
5.3
6.5
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 80 °C/W.
Document Number: 73954
S-80435-Rev. B, 03-Mar-08
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1
New Product
SiA414DJ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
8
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
V
9
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
0.8
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 8 V, VGS = 0 V
1
VDS = 8 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
a
Forward Transconductance
RDS(on)
gfs
VDS ≥ 5 V, VGS = 4.5 V
-3
0.35
20
µA
A
VGS = 4.5 V, ID = 9.7 A
0.009
0.011
VGS = 2.5 V, ID = 9 A
0.011
0.013
VGS = 1.8 V, ID = 8.1 A
0.013
0.016
VGS = 1.5 V, ID = 4.5 A
0.016
0.022
VGS = 1.2 V, ID = 2.4 A
0.027
0.041
VDS = 4 V, ID = 9.7 A
50
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1800
VDS = 4 V, VGS = 0 V, f = 1 MHz
td(off)
tf
VDS = 4 V, VGS = 5 V, ID = 10 A
VDS = 4 V, VGS = 4.5 V, ID = 10 A
tr
tf
21
32
19
29
2.5
nC
6.5
f = 1 MHz
VDD = 4 V, RL = 0.4 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
td(on)
td(off)
pF
450
td(on)
tr
650
VDD = 4 V, RL = 0.4 Ω
ID ≅ 10 A, VGEN = 5 V, Rg = 1 Ω
Ω
2.5
12
20
10
15
65
100
20
30
10
15
10
15
35
55
10
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
12
40
IS = 10 A, VGS = 0 V
IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
40
80
ns
20
40
nC
12
28
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73954
S-80435-Rev. B, 03-Mar-08
New Product
SiA414DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
40
VGS = 5 thru 2 V
8
ID - Drain Current (A)
ID - Drain Current (A)
32
1.5 V
24
16
6
TC = 25 °C
4
TC = 125 °C
2
8
1V
0
0.0
0.4
0.8
1.2
1.6
TC = - 55 °C
0
0.0
2.0
0.3
0.6
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2500
0.06
VGS = 1.2 V
2000
VGS = 1.5 V
Ciss
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.05
0.04
0.03
VGS = 1.8 V
0.02
1500
1000
Coss
500
0.01
Crss
VGS = 2.5 V
VGS = 4.5 V
0
0
8
16
24
32
0
0
40
2
On-Resistance vs. Drain Current and Gate Voltage
6
8
Capacitance
1.5
5
ID = 10 A
1.4
ID = 9.7 A
4
VDS = 4 V
3
VDS = 6.4 V
2
VGS = 1.8 V, 2.5 V, 4.5 V
1.3
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
4
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
1.2
VGS = 1.5 V
1.1
1.0
0.9
1
0.8
0
0
3
6
9
12
15
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73954
S-80435-Rev. B, 03-Mar-08
18
21
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
SiA414DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.040
100
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 9.7 A
TJ = 25 °C
10
0.032
0.024
0.016
0.008
25 °C
0
1
0.0
125 °C
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
30
0.7
25
ID = 250 µA
20
Power (W)
V GS(th) (V)
0.6
0.5
15
0.4
10
0.3
5
0.2
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
Limited by R DS(on)*
100 µs
I D - Drain Current (A)
10
1 ms
10 ms
100 ms
1s
10 s
1
DC
0.1
TA = 25 °C
Single Pulse
0.01
0.1
1
* VGS
10
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73954
S-80435-Rev. B, 03-Mar-08
New Product
SiA414DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
40
35
15
Power Dissipation (W)
I D - Drain Current (A)
30
25
20
Package Limited
15
10
10
5
5
0
0
0
25
50
75
100
125
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73954
S-80435-Rev. B, 03-Mar-08
www.vishay.com
5
New Product
SiA414DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65 C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
10-4
0.02
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73954.
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Document Number: 73954
S-80435-Rev. B, 03-Mar-08
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
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11
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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1