VISHAY SF1600

SF1200, SF1600
Vishay Semiconductors
Ultra-Fast Avalanche Sinterglass Diode
FEATURES
• Very low switching losses
• Glass passivated
• High reverse voltage
• Hermetically
envelope
sealed
axial-leaded
glass
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
949539
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
APPLICATIONS
Case: SOD-57
• Switched mode power supplies
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
• High-frequency inverter circuits
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
SF1200
VR = 1200 V; IFAV = 1 A
SOD-57
SF1600
VR = 1600 V; IFAV = 1 A
SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage = repetitive peak
reverse voltage
See electrical characteristics
PART
SYMBOL
VALUE
UNIT
SF1200
VR = VRRM
1200
V
SF1600
VR = VRRM
1600
V
Peak forward surge current
tp = 10 ms, half sine wave
IFSM
30
A
Average forward current
Half sine wave, VR = VRRM,
RthJA = 45 k/W
IFAV
1
A
I(BR)R = 400 mA, inductive load
ER
10
mJ
Tj = Tstg
- 55 to + 175
°C
Max. pulse energy in avalanche
mode, non repetitive (inductive load
switch off
Junction and storage temperature
range
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
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TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
RthJA
45
K/W
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 86059
Rev. 1.7, 04-Aug-10
SF1200, SF1600
Ultra-Fast Avalanche Sinterglass
Diode
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
Reverse current
SYMBOL
MIN.
TYP.
MAX.
IF = 1 A
PART
VF
-
-
3.4
V
VR = VRRM
IR
-
-
5
μA
VR = VRRM, Tj = 125 °C
Reverse breakdown voltage
lR = 100 μA
IR
-
-
50
μA
SF1200
V(BR)R
1250
-
-
V
SF1600
V(BR)R
1650
-
-
V
trr
-
-
75
ns
IF = 0.5 A, IR = 1 A, iR = 0.25 A
Reverse recovery time
UNIT
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
100
I R – Reverse Current (A )
– Forward Current (A)
V R = VRRM
10
Tj = 175 °C
1
T j = 25 °C
F
0.1
I
0.01
1
16463
2 3
4 5
6 7
8
V F – Forward Voltage ( V )
Fig. 1 - Forward Current vs. Forward Voltage
V R = V RRM
half sinewave
1.0
0.8
RthJA = 45 K/W
l = 10 mm
0.6
0.4
RthJA = 100 K/W
PCB: d = 25 mm
0.2
25
9
16464
50
75
100 125 150 175
Tj – Junction Temperature (°C )
Fig. 3 - Reverse Current vs. Junction Temperature
PR – Reverse Power Dissipation ( mW)
0
I FAV –Average Forward Current( A )
10
1
0.001
700
V R = VRRM
600
500
PR–Limit
at 10 0 % VR
400
300
PR–Limit
at 80 % VR
200
100
0
0.0
0
15789
100
20
60 80 100 120 140 160 180
Tamb – Ambient Temperature(°C )
25
40
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Document Number: 86059
Rev. 1.7, 04-Aug-10
16465
50
75
100 125 150 175
Tj – Junction Temperature (°C )
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
For technical questions within your region, please contact one of the following:
[email protected], Diodes[email protected], [email protected]
www.vishay.com
85
SF1200, SF1600
Vishay Semiconductors
Ultra-Fast Avalanche Sinterglass
Diode
CD – Diode Capacitance ( pF )
30
f = 1 MHz
25
20
15
10
5
0
0.1
16466
1.0
10.0
V R – Reverse Voltage ( V )
100.0
Fig. 5 - Diode Capacitance vs. Reverse Voltage
3.6 (0.142) max.
0.82 (0.032) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
20543
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86
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 86059
Rev. 1.7, 04-Aug-10
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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