BY527 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current capability • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 949539 • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA APPLICATIONS Case: SOD-57 • General purpose Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BY527 VR = 800 V; IFAV = 2 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage, non repetitive Reverse voltage Peak forward surge current TEST CONDITION SYMBOL VALUE lR = 100 μA VRSM 1250 V See electrical characteristics VR 800 V tp = 10 ms, half sine wave IFSM 50 A lFRM 12 A ϕ = 180° IFAV 2 A Tj = 175 °C, tp = 20 μs, half sinus wave PR 1000 W l(BR)R = 1 A, Tj = 175 °C ER 20 mJ i2 t 8 A2 s Tj = Tstg -55 to + 175 °C Repetitive peak forward current Average forward current Pulse avalanche peak power Pulse energy in avalanche mode, non repetitive (inductive load switch off) UNIT i2t rating Junction and storage temperature range MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient www.vishay.com 150 TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, TL = constant RthJA 45 K/W On PC board with spacing 25 mm RthJA 100 K/W For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 86007 Rev. 1.7, 25-Aug-10 BY527 Standard Avalanche Sinterglass Diode Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX UNIT IF = 1 A VF - 0.9 1 V IF = 10 A VF - - 1.65 V VR = 800 V IR - 0.1 1 μA μA Forward voltage Reverse current VR = 800 V, Tj = 100 °C IR - 5 10 Breakdown voltage IR = 100 μA, tp/T = 0.01, tp = 0.3 ms V(BR) 1250 - - V Diode capacitance VR = 4 V, f = 1 MHz CD - 16 - pF μs Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 4 IF = 1 A, dI/dt = 5 A/μs, VR = 50 V trr - - 4 μs IF = 1 A, dI/dt = 5 A/μs Qrr - - 3 μC Reverse recovery charge 120 l 2.5 l IFAV - Average Forward Current (A) RthJA - Ther. Resist. Junction/Ambient (K/W) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 80 TL = constant 60 40 20 VR = VRRM half sine wave RthJA = 45 K/W 2.0 l = 10 mm 1.5 1.0 RthJA = 100 K/W 0.5 PCB: d = 25 mm 0 0 0 5 10 15 20 25 30 l - Lead Length (mm) 949101 0 Fig. 1 - Typ. Thermal Resistance vs. Lead Length 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (°C) 16423 Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 100 IR - Reverse Current (μA) IF - Forward Current (A) VR = VRRM 10 Tj = 175 °C 1 0.1 Tj = 25 °C 0.01 100 0.001 1 0 16422 10 0.5 1 1.5 2 2.5 3 VF - Forward Voltage (V) Fig. 2 - Forward Current vs. Forward Voltage Document Number: 86007 Rev. 1.7, 25-Aug-10 25 16424 50 75 100 125 150 175 Tj - Junction Temperature (°C) Fig. 4 - Reverse Current vs. Junction Temperature For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 151 BY527 Standard Avalanche Sinterglass Diode 300 40 VR = VRRM CD - Diode Capacitance (pF) PR - Reverse Power Dissipation (mW) Vishay Semiconductors 250 200 PR - Limit at 100 % VR 150 100 PR - Limit at 80 % VR 50 0 f = 1 MHz 35 30 25 20 15 10 5 0 25 50 75 100 125 150 175 0.1 Tj - Junction Temperature (°C) 16425 16426 Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature 1 10 100 VR - Reverse Voltage (V) Fig. 6 - Diode Capacitance vs. Reverse Voltage 1000 Zthp - Thermal Resistance for Pulse Cond. (K/W) VRRM = 1000 V, RthJA = 100 K/W 100 tp/T = 0.5 Tamb = 25 °C tp/T = 0.2 10 Tamb = 45 °C tp/T = 0.1 Tamb = 60 °C tp/T = 0.05 tp/T = 0.02 1 10 Tamb = 70 °C tp/T = 0.01 -5 10 Tamb = 100 °C -4 10 -3 -2 10 10 -1 10 0 10 1 tp - Pulse Length (s) 94 9178 1 10 100 IFRM - Repetitive Peak Forward Current (A) Fig. 7 - Thermal Response 3.6 (0.142) max. 0.82 (0.032) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-57 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 www.vishay.com 152 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 86007 Rev. 1.7, 25-Aug-10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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