ROHM RFUS20NS4S_11

Data Sheet
Super Fast Recovery Diode
RFUS20NS4S
lSeries
Ultra Fast Recovery
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
RFUS20
NS4S
lApplications
General rectification
①
lFeatures
1)Ultra low switching loss
2)High current overload capacity
3)Cathode common single type
②
lStructure
ROHM : LPDS
JEITA : TO263S
Manufacture Year, Week and Day
①
lConstruction
Silicon epitaxial planer
①
③
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
VRM
Repetitive peak reverse voltage
VR
Reverse voltage
Average rectified forward current
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
lElectrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
Conditions
Duty≤0.5
Direct voltage
Tc=47°C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25℃
60Hz half sin wave resistive load ,
Limits
430
430
20
Unit
V
V
A
100
A
150
-55 to +150
C
C
Conditions
IF=20A
Min.
Typ.
Max.
Unit
－
1.4
1.6
V
μA
Reverse current
IR
VR=430V
－
0.06
10
Reverse recovery time (*)
trr
IF=0.5A,IR=1A,Irr=0.25×IR
－
24
35
ns
junction to case
－
－
2.5
°C/W
Thermal resistance (*)
Rth(j-c)
(*) Design assurance without measurement.
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A
1000000
100
Tj=125°C
Tj=150°C
10
Tj=25°C
1
Tj=125°C
100000
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
Data Sheet
RFUS20NS4S
Tj=75°C
Tj=150°C
10000
Tj=75°C
1000
100
Tj=25°C
10
0.1
1
0
500
1000
1500
2000
2500
0
1000
100
150
200
250
300
350
400
450
1500
FORWARD VOLTAGE:VF(mV)
f=1MHz
Tj=25°C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
50
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
100
Tj=25°C
IF=20A
n=20pcs
1450
1400
1350
AVE:1373mV
1300
1250
1200
10
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
400
Tj=25°C
VR=430V
n=20pcs
AVE:49.0nA
10
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
100
Ta=25°C
f=1MHz
VR=0V
n=10pcs
390
380
370
360
AVE:372.3pF
350
1
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Ct DISPERSION MAP
2/4
2011.10 - Rev.A
Data Sheet
RFUS20NS4S
300
30
REVERSE RECOVERY TIME:trr(ns)
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
Tj=25°C
IF=0.5A
IR=1A
Irr=0.25×IR
n=10pcs
1cyc
IFSM
250
8.3ms
200
150
AVE:183A
100
50
25
20
AVE:22.9ns
15
10
5
0
0
IFSM DISPERSION MAP
trr DISPERSION MAP
1000
1000
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
100
10
IFSM
8.3ms
8.3ms
time
100
1cyc.
1
10
1
10
100
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
7
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
AVE：6.95kV
5
4
3
AVE：0.93kV
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
10
6
2
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
Rth(j-c)
1
1
0
C=200pF
R=0Ω
0.1
0.001
C=100pF
R=1.5kΩ
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
0.01
3/4
2011.10 - Rev.A
Data Sheet
RFUS20NS4S
70
35
D.C.
30
D.C.
0V
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
FORWARD POWER
DISSIPATION:Pf(W)
D=0.8
50
D=0.5
half sin wave
40
D=0.2
D=0.1
30
Io
0A
60
D=0.05
20
D=0.5
T
D=t/T
VR=350V
Tj=150°C
20
half sin wave
15
D=0.2
10
D=0.1
D=0.05
5
10
VR
t
D=0.8
25
0
0
0
5
10
15
20
25
30
0
35
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
30
60
90
120
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
4/4
2011.10 - Rev.A
Notice
Notes
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R1120A