ROHM RF1005TF6S

Data Sheet
Super Fast Recovery Diode
RF1005TF6S
Series
Standard Fast Recovery
Dimensions (Unit : mm)
Structure
+0.3
4.5 −0.1
+0.3
10 −0.1
+0.2
2.8 −0.1
3.2 ±0.2
14 ±0.5
Construction
Silicon epitaxial planer
(3)
1.6MAX
8 ±0.2
(1)
2.3 ±0.3
Features
1)Single type.(TO-220)
2)High switching speed
15 +0.4
−0.2
12 ±0.2
Applications
General rectification
1.02
1.12
0.76
(1)
(3)
2.54 ±0.5
2.54 ±0.5
+0.1
2.6 ±0.5
0.62 −0.05
ROHM : TO220NFM
Manufacture Year
Manufacture Week
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
VRM
Repetitive peak reverse voltage
Reverse voltage
VR
Average rectified forward current
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Electrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
IR
Reverse current
Reverse recovery time(*)
trr
Thermal resistance(*)
Rth(j-c)
Conditions
Duty  0.5
Direct voltage
Tc=78C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
60Hz half sin wave, Resistance load,
Limits
600
600
10
Unit
V
V
A
100
A
150
55 to 150
C
C
Conditions
Min.
Typ.
Max.
Unit
IF=10A
VR=600V
IF=0.5A,IR=1A,Irr=0.25×IR
-
1.4
0.05
30
-
1.7
10
40
3.5
V
μA
ns
C/ W
junction to case
(*) : Design assurance without measurement.
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1/3
2011.05 - Rev.A
Data Sheet
RF1005TF6S
Electrical characteristics curves
100
100000
1000
Tj=150C
Tj=25C
Tj=75C
1
Tj=75C
1000
100
Tj=25C
10
0
500
1000
1500
2000
2500
0
3000
50
100
150
200
250
300
10
350
0
10
1300
1200
AVE : 1268mV
AVE : 40.6nA
10
260
AVE : 270.6pF
240
220
IR DISPERSION MAP
Ct DISPERSION MAP
REVERSE RECOVERY TIME : trr(ns)
AVE : 192A
100
1cyc
IFSM
50
8.3ms
Tｊ=25C
IF=0.5A
IR=1A
Irr=0.25×IR
n=10pcs
35
30
25
20
AVE : 29.0ns
15
10
5
PEAK SURGE
FORWARD CURRENT : I FSM(A)
1000
40
200
100
IFSM
10
8.3ms
1
1
10
30
1000
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISRESION MAP
8.3ms
1cyc.
0
0
30
200
VF DISPERSION MAP
250
25
Ta=25℃
f=1MHz
VR=0V
n=10pcs
280
1
1100
20
300
Tｊ=25C
VR=600V
n=20pcs
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
REVERSE CURRENT : IR(nA)
Tｊ=25C
IF=10A
n=20pcs
15
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
100
1400
150
5
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
FORWARD VOLTAGE : V F(mV)
100
1
0.1
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT : I FSM(A)
f=1MHz
Tj=25C
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Tj=150C
10
Tj=125C
10000
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : I F(A)
Tj=125C
10
time
100
25
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
IFSM
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
no break at 30kV
20
15
AVE ： 20.7kV
10
5
0
10
1
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
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100
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
2/3
Rth(j-c)
1
0.1
0.001
0.01
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
2011.05 - Rev.A
35
D=0.5
25
half sin wave
20
D=0.2
D=0.1
15
D=0.0
10
5
12
T
D=t/T
VR=480V
Tj=150C
D=0.5
10
half sin wave
8
D=0.2
6
D=0.1
4
D=0.05
2
0
VR
t
D=0.8
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
FORWARD POWER
DISSIPATION : Pf(W)
0V
D.C.
14
D=0.8
Io
0A
16
D.C.
30
Data Sheet
RF1005TF6S
0
0
3
6
9
12
15
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
18
0
30
60
90
120
CASE TEMPARATURE : Tc(C)
Derating Curveﾞ(Io-Tc)
3/3
150
2011.05 - Rev.A
Notice
Notes
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R1120A