PZT559A PNP Silicon Silicon Planar Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-223 The PZT559A is designed for general purpose switching and amplifier applications. FEATURES 4 Amps continuous current, up to 10 Amps peak current. Excellent gain characteristic specified up to 3 Amps Very low saturation voltages MARKING 559A Date code REF. A B C D E F I O PACKAGE INFORMATION Package MPQ Leader Size SOT-223 2.5K 13’ inch Millimeter Min. Max. 6.30 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.60 REF. 0.60 0.80 0.02 0.10 0° 10° REF. G H J K L M N Millimeter Min. Max. 0.02 0.10 1.50 2.00 0.25 0.35 0.85 1.05 2.30 REF. 2.90 3.10 13 TYP. Collector 2 4 1 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -180 V Collector to Emitter Voltage VCEO -140 V Emitter to Base Voltage VEBO -7 V Collector Current (DC) IC -4 A ICM -10 A 3 W 1.6 W +150, -55~150 ℃ Collector Current (Pulse) Total Power Dissipation 1 Total Power Dissipation 2 Junction, Storage Temperature PD TJ, TSTG Notes： 1. Surface mounted on 52mm x 52mm x 1.6mm copper pad of FR4 board. 2. Surface mounted on 25mm x 25mm x 1.6mm copper pad of FR4 board. http://www.SeCoSGmbH.com/ 28-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 PZT559A PNP Silicon Silicon Planar Medium Power Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25 °C unless otherwise specified) Symbol Min. Typ. Max. Unit Collector - Base Breakdown Voltage Parameter BVCBO -180 - - V IC= -100uA, IE=0 Increased Operating Voltage BVCER -180 - - V IC= -1uA, RB≦1KΩ Collector - Emitter Breakdown Voltage BVCEO -140 - - V IC= -10mA, IB=0 Emitter - Base Breakdown Voltage BVEBO -7 - - V IE= -100uA, IC=0 ICBO - - -20 nA VCB= -150V, IE=0 ICER - - -20 nA VCB = -150V, R≦1KΩ IEBO - - -10 nA VEB= -6V, IC=0 VCE(sat)1 - -40 -60 mV IC= -100mA, IB= -5mA VCE(sat)2 - -55 -80 mV IC= -500mA, IB= -50mA VCE(sat)3 - -85 -120 mV IC= -1A, IB= -100mA VCE(sat)4 - -250 -360 mV IC= -3A, IB= -300mA VBE(sat) - -940 -1.04 V IC= -3A, IB= -300mA VBE(on) - -830 -0.93 V VCE= -5V, IC= -3A *hFE1 100 225 - *hFE2 100 200 300 VCE= -5V, IC = -1A *hFE3 45 80 - VCE= -5V, IC = -3A *hFE4 - 5 - VCE= -5V, IC = -10A fT - 120 - MHz COB - 33 - pF VCB= -10 V, f=1 MHz Ton - 42 nS Toff - VCC= -50V, IC = -1A, IB1= -IB2 = -100mA Collector Cut - Off Current Emitter Cut - Off Current Collector - Emitter Saturation Voltage Base - Emitter Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-on Switching Time Turn-off 636 - Test Conditions VCE= -5V, IC= -10 mA VCE= -10V, IC= -100mA, f=50 MHz *Measured under pulsed condition. Pulse width = 300 us, Duty cycle ≦ 2 % http://www.SeCoSGmbH.com/ 28-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 PZT559A Elektronische Bauelemente PNP Silicon Silicon Planar Medium Power Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 28-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 PZT559A Elektronische Bauelemente PNP Silicon Silicon Planar Medium Power Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 28-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4