MMDT3946 COMPLEMENTARY NPN / PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 200 mWatts FEATURES • Epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • In compliance with EU RoHS 2002/95/EC directives . Transition Frequency > 300MHz f @IC=10mA,V T CE =20V, f=100MHz MECHANICAL DATA • Case: SOT-363, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.006 gram • Marking: S3A 6 5 4 1 2 3 Fig.55 ABSOLUTE RATINGS ABSOLUTE RATING NPN 3904 Secti on PNP 3906 Secti on - Symbol Value Value Uni ts C ollector - Emi tter Voltage VCEO 40 -40 V C ollector - Base Voltage VCBO 60 -40 V Emi tter - Base Voltage VEBO 6.0 -5.0 V IC 200 -200 mA PARAMETER C ollector C urrent - C onti nuous THERMAL CHARACTERISTICS PARAMETER Symbol Value Units Max Power Dissipation (Note 1) PTOT 200 mW Thermal Resistance , Junction to Ambient RθJA 625 Junction Temperature TJ -55 to 150 O C Storage Temperature TSTG -55 to 150 O C O C/W Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. REV.0.1-NOV.20.2008 PAGE . 1 MMDT3946 ELECTRICAL CHARACTERISTICS NPN SECTION PA RA M E TE R S ym b o l Te s t C o n d i t i o n M IN . T YP. MA X . U ni t s C o lle c to r - E mi tte r B re a k d o wn Vo lta g e V (B R)C E O IC = 1 . 0 m A , IB = 0 40 - - V C o lle c to r - B a s e B re a k d o wn Vo lta g e V (B R)C B O IC = 1 0 u A , IE = 0 60 - - V E mi tte r - B a s e B re a k d o wn Vo lta g e V (B R)E B O IE = 1 0 u A , IC = 0 6 .0 - - V B a s e C ut o f f C ur r e nt C o l l e c t o r C ut o f f C ur r e nt D C C ur r e nt G a i n ( N o t e 2 ) IB l V CE=3 0 V, V EB=3 .0 V - - 50 nA IC E X V CE=3 0 V, V EB=3 .0 V - - 50 nA hF E IC = 0 . 1 m A , V C E = 1 . 0 V IC = 1 . 0 m A , V C E = 1 . 0 V IC = 1 0 m A , V C E = 1 . 0 V IC = 5 0 m A , V C E = 1 . 0 V IC = 1 0 0 m A , V C E = 1 . 0 V 40 70 100 60 30 - 300 - - C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e (No te 2 ) V C E ( S AT) IC = 1 0 m A , IB = 1 . 0 m A IC = 5 0 m A , IB = 5 . 0 m A - - 0 .2 0 .3 V B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e (No te 2 ) V B E ( S AT) IC = 1 0 m A , IB = 1 . 0 m A IC = 5 0 m A , IB = 5 . 0 m A 0 .6 5 - - 0 .8 5 0 .9 5 V C o l l e c t o r - B a s e C a p a c i t a nc e C CBO V C B = 5 V , IE = 0 , f = 1 M H z - - 4 .0 pF E m i t t e r - B a s e C a p a c i t a nc e C EBO V C B = 0 . 5 V , IC = 0 , f = 1 M H z - - 8 .0 pF D e l a y Ti m e td V CC=3 V,V BE=-0 .5 V, IC = 1 0 m A , IB = 1 . 0 m A - - 35 ns R i s e Ti m e tr V CC=3 V,V BE=-0 .5 V, IC = 1 0 m A , IB = 1 . 0 m A - - 35 ns S t o r a g e Ti m e ts V C C = 3 V , IC = 1 0 m A IB 1 = IB 2 = 1 . 0 m A - - 200 ns F a l l Ti m e tf V C C = 3 V , IC = 1 0 m A IB 1 = IB 2 = 1 . 0 m A - - 50 ns Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +3 V 3 00 n s D uty C ycle ~ 2.0% + 10.9V 0 -0 .5 V 27 5 W C S * < 4pF 1 0K W < 1ns D elay an d R ise Tim e E q u iv a len t Test C ircu it +3V 27 5 W 10 to 500 us D uty C ycle ~ 2.0% +10.9V 0 1 0K W -9 .1 V < 1ns C S * < 4pF 1N 916 S torag e and F all Tim e E q uivalent Test C ircu it REV.0.1-NOV.20.2008 PAGE . 2 MMDT3946 ELECTRICAL CHARACTERISTICS PNP SECTION PA RA M E TE R S ym b o l Te s t C o n d i t i o n M IN . T YP. MA X . U ni t s C o lle c to r - E mi tte r B re a k d o wn Vo lta g e V(B R )C E O IC = - 1 . 0 m A , IB = 0 -40 - - V C o lle c to r - B a s e B re a k d o wn Vo lta g e V(B R )C B O IC = - 1 0 u A , IE = 0 -40 - - V E mi tte r - B a s e B re a k d o wn Vo lta g e V(B R )E B O IE = - 1 0 u A , IC = 0 -5 .0 - - V B a s e C ut o f f C ur r e nt C o l l e c t o r C ut o f f C ur r e nt D C C ur r e nt G a i n ( N o t e 2 ) IB l V CE=-3 0 V, V EB=-3 .0 V - - -50 nA IC E X V CE=-3 0 V, V EB=-3 .0 V - - -50 nA hF E IC = - 0 . 1 m A , V C E = - 1 . 0 V IC = - 1 . 0 m A , V C E = - 1 . 0 V IC = - 1 0 m A , V C E = - 1 . 0 V IC = - 5 0 m A , V C E = - 1 . 0 V IC = - 1 0 0 m A , V C E = - 1 . 0 V 60 80 100 60 30 - 300 - - C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e (No te 2 ) VC E (S AT) IC = - 1 0 m A , IB = - 1 . 0 m A IC = - 5 0 m A , IB = - 5 . 0 m A - - -0 .2 5 -0 .4 V B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e (No te 2 ) VB E (S AT) IC = - 1 0 m A , IB = - 1 . 0 m A IC = - 5 0 m A , IB = - 5 . 0 m A -0 .6 5 - - -0 .8 5 -0 .9 5 V C o l l e c t o r - B a s e C a p a c i t a nc e CCBO V C B = - 5 V , IE = 0 , f = 1 M H z - - 4 .0 pF E m i t t e r - B a s e C a p a c i t a nc e CEBO V C B = - 0 . 5 V , IC = 0 , f = 1 M H z - - 10 pF D e l a y Ti m e td V CC=-3 V,V BE=-0 .5 V, IC = - 1 0 m A , IB = - 1 . 0 m A - - 35 ns R i s e Ti m e tr V CC=-3 V,V BE=-0 .5 V, IC = - 1 0 m A , IB = - 1 . 0 m A - - 35 ns S t o r a g e Ti m e ts V C C = - 3 V , IC = - 1 0 m A IB 1 = IB 2 = - 1 . 0 m A - - 225 ns F a l l Ti m e tf V C C = - 3 V , IC = - 1 0 m A IB 1 = IB 2 = 1 . 0 m A - - 75 ns SWITCHING TIME EQUIVALENT TEST CIRCUITS +3 V -0 .5 V 0 27 5 W < 1ns - 10.9V 300 ns C S * < 4pF 10K W D elay an d R ise Tim e E q u iv alen t Test C ircu it +3V 27 5 W < 1ns +9 .1 V 0 - 1 0.9V 10 to 500 us Duty Cycle ~ 2.0% 10K W C S * < 4pF 1N 916 S torag e and F all Tim e E q uivalent Test C ircu it REV.0.1-NOV.20.2008 PAGE . 3 MMDT3946 ELECTRICAL CHARACTERISTICS CURVE NPN SECTION 300 1.400 V CE =1V o T J =150 C 250 1.000 T J =100 oC 150 V BE (V) h FE 200 1.200 o T J =25 C 100 T J =100 oC 0.800 T J =25 oC 0.600 0.400 50 T J =150 oC 0.200 V CE =1V 0 0.01 0.1 1 10 100 0.000 0.01 1000 0.1 1 10 100 1000 Collector Current, I C (mA) Collector Current, I C (mA) Fig. 1. Typical h FE vs. Collector Current Fig. 2. Typical VBE vs. Collector Current 1.000 1.0 T J =25 oC o T J =150 C 0.100 V BE (sat) (V) V CE (sat)(mV) I C / I B =10 o T J =25 C T J =100 oC T J =150 oC I C / I B =10 0.010 0.01 0.1 1 10 100 0.1 0.01 1000 Collector Current, I C (mA) 0.1 1.0 10 100 Collector Current, I C (mA) Fig. 4. Typical V BE(sat) vs Collector Current Fig. 3. Typical V CE (sat) vs. Collector Current 10 Capacitance (pF) C IB (EB) T J =150 oC C OB (CB) 1 0.1 1 10 100 Reverse Voltage, V R (V) Fig. 5. Typical Capacitances vs. Reverse Voltage REV.0.1-NOV.20.2008 PAGE . 4 MMDT3946 ELECTRICAL CHARACTERISTICS CURVE PNP SECTION 1.2 250 T J =150 oC 200 T J =100 C V CE =1V V CE =1V 1.0 0.8 o 150 o T J =25 C 100 o T J =25 C -V BE (V) h FE 300 0.6 T J =150 C 0.2 50 0 0.01 0.1 1 10 100 0.0 0.01 1000 Collector Current, -I C (mA) 0.1 1 10 100 1000 Collector Current, -I C (mA) Fig. 1. Typical h FE vs Collector Current Fig. 2. Typical V BE vs Collector Current 1.00 1.000 o I C / I B =10 0.10 T J =25 C -V BE (sat) (V) -V CE (sat) (V) o T J =100 oC 0.4 o T J =150 C o T J =25 C T J =100 oC o T J =150 C I C / I B =10 0.01 0.01 0.1 1 10 100 0.100 0.01 1000 Collector Current, -I C (mA) 0.1 1 10 100 Collector Current, -I C (mA) Fig. 3. Typical V CE (sat) vs Collector Current Fig. 4. Typical V BE (sat) vs Collector Current 10 Capacitance (pF) C IB (EB) C OB (CB) 1 -0.1 -1 -10 -100 Reverse Voltage, V R (V) Fig. 5. Typical Capacitances vs Reverse Voltage REV.0.1-NOV.20.2008 PAGE . 5 MMDT3946 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2008 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.1-NOV.20.2008 PAGE . 6