INFINEON IPB023N06N3G

Type
IPB023N06N3 G
OptiMOS™3 Power-Transistor
Product Summary
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
V DS
60
V
R DS(on),max
2.3
mΩ
ID
140
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPB023N06N3 G
Package
PG-TO263-7
Marking
023N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C2)
140
T C=100 °C
140
Unit
A
Pulsed drain current3)
I D,pulse
T C=25 °C
560
Avalanche energy, single pulse4)
E AS
I D=100 A, R GS=25 Ω
330
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
214
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
1)
55/175/56
J-STD20 and JESD22
2)
Current is limited by bondwire; with an R thJC=0.7 K/W the chip is able to carry 226 A.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Rev. 2.2
page 1
2009-12-11
IPB023N06N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
0.7
minimal footprint
-
-
62
6 cm² cooling area 5)
-
-
40
60
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
R thJA
junction - ambient
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=141 µA
2
3
4
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.1
2
V DS=60 V, V GS=0 V,
T j=125 °C
-
20
200
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=100 A
-
1.9
2.3
mΩ
Gate resistance
RG
-
1.4
-
Ω
Transconductance
g fs
83
166
-
S
|V DS|>2|I D|R DS(on)max,
I D=100 A
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2009-12-11
IPB023N06N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
12000
-
2600
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
87
-
Turn-on delay time
t d(on)
-
31
-
Rise time
tr
-
90
-
Turn-off delay time
t d(off)
-
62
-
Fall time
tf
-
23
-
Gate to source charge
Q gs
-
62
-
Gate to drain charge
Q gd
-
13
-
-
38
-
V GS=0 V, V DS=30 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=100 A, R G=3Ω
16000 pF
ns
Gate Charge Characteristics 6)
V DD=30 V, I D=100 A,
V GS=0 to 10 V
nC
Switching charge
Q sw
Gate charge total
Qg
-
149
198
Gate plateau voltage
V plateau
-
5.1
-
Output charge
Q oss
-
120
160
nC
-
-
140
A
-
-
560
-
0.9
1.2
V
-
69
-
ns
-
120
-
nC
V DD=30 V, V GS=0 V
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
6)
Rev. 2.2
T C=25 °C
V GS=0 V, I F=100 A,
T j=25 °C
V R=30 V, I F=100A ,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
page 3
2009-12-11
IPB023N06N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
250
160
200
120
I D [A]
P tot [W]
150
80
100
40
50
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
1
limited by on-state
resistance
1 µs
10 µs
0.5
102
Z thJC [K/W]
I D [A]
100 µs
1 ms
10
0.2
0.1
0.05
10 ms
1
0.1
0.02
DC
0.01
single pulse
100
10-1
0.01
100
101
102
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 2.2
10-5
page 4
2009-12-11
IPB023N06N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
400
6
6.5 V
10 V
6V
5.5 V
5V
8V
320
6V
R DS(on) [mΩ]
4
I D [A]
240
5.5 V
160
6.5 V
8V
2
10 V
5V
80
4.5 V
0
0
0
1
2
3
4
5
0
100
200
300
400
300
400
I D [A]
V DS [V]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
400
320
280
320
240
200
I D [A]
g fs [S]
240
160
160
120
80
80
175 °C
25 °C
40
0
0
0
2
4
6
8
Rev. 2.2
0
100
200
I D [A]
V GS [V]
page 5
2009-12-11
IPB023N06N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=100 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
5
4
3.5
4
1410 µA
141 µA
2.5
3
V GS(th) [V]
R DS(on) [mΩ]
3
max
typ
2
2
1.5
1
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
105
103
Ciss
25 °C
104
175 °C
102
I F [A]
Coss
C [pF]
175 °C, max
103
25 °C, max
101
Crss
102
101
100
0
20
40
60
V DS [V]
Rev. 2.2
0
0.5
1
1.5
2
V SD [V]
page 6
2009-12-11
IPB023N06N3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=100 A pulsed
parameter: T j(start)
parameter: V DD
1000
12
30 V
10
12 V
100
48 V
100 °C
150 °C
V GS [V]
I AS [A]
8
25 °C
10
6
4
2
1
0
1
10
100
1000
0
40
80
120
160
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70
V GS
Qg
V BR(DSS) [V]
65
60
V g s(th)
55
Q g(th)
Q sw
Q gs
50
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 2.2
page 7
2009-12-11
IPB023N06N3 G
PG-TO263-7 (D²-Pak 7pin)
2)
Current is limited by bondwire; with an R thJC=0.7 K/W the chip is able to carry 226 A.
3)
See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.2
page 8
2009-12-11
IPB023N06N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.2
page 9
2009-12-11