Type IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • for sync. rectification, drives and dc/dc SMPS R DS(on),max (SMD) 3.7 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 90 A ™ previous engineering sample codes: IPP04xN06N IPI04xN06N IPB04xN06N • Very low on-resistance R DS(on) • N-channel, normal level • Avalanche rated • Qualified according to JEDEC1) for target applications • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G Package PG-TO263-3 PG-TO262-3 PG-TO220-3 Marking 037N06N 040N06N 040N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 90 T C=100 °C 90 Unit A Pulsed drain current3) I D,pulse T C=25 °C 360 Avalanche energy, single pulse E AS I D=90 A, R GS=25 Ω 165 mJ Gate source voltage V GS ±20 V Power dissipation P tot 188 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) 2) 55/175/56 J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=0.8 K/W the chip is able to carry 162 A. 3) See figure 3 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) Rev. 1.03 page 1 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 0.8 minimal footprint - - 62 6 cm² cooling area 4) - - 40 60 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, R thJA junction - ambient K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 2 3 4 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=60 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=90 A - 3.3 4 mΩ V GS=10 V, I D=90 A, (SMD) - 3.0 3.7 - 1.3 - Ω 61 121 - S Gate resistance RG Transconductance g fs Rev. 1.03 |V DS|>2|I D|R DS(on)max, I D=90 A page 2 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G Parameter Values Symbol Conditions Unit min. typ. max. - 8000 11000 pF - 1700 2300 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=30 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance C rss - 58 87 Turn-on delay time t d(on) - 30 - Rise time tr - 70 - Turn-off delay time t d(off) - 40 - Fall time tf - 5 - Gate to source charge Q gs - 42 - Gate to drain charge Q gd - 9 - - 27 - V DD=30 V, V GS=10 V, I D=90 A, R G=3.5 Ω ns Gate Charge Characteristics 5) V DD=30 V, I D=90 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 98 - Gate plateau voltage V plateau - 5.3 - V Output charge Q oss - 79 - nC - - 90 - - 360 - 0.97 1.2 V - 125 - ns - 110 - nC V DD=30 V, V GS=0 V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) T C=25 °C V GS=0 V, I F=90 A, T j=25 °C V R=30 V, IF=50A, di F/dt =100 A/µs A See figure 16 for gate charge parameter definition Rev. 1.03 page 3 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 100 160 80 120 60 I D [A] P tot [W] 200 80 40 40 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 100 limited by on-state resistance 1 µs 10 µs 10 200 0.5 2 100 µs 0.2 1 ms DC 10 Z thJC [K/W] I D [A] 10 ms 1 0.1 10-1 0.05 0.02 0.01 single pulse 100 10-1 10 10-2 -1 10 0 10 1 10 2 V DS [V] Rev. 1.03 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 15 320 8V 10 V 7V 5.5 V 5V 6.5 V 4.5 V 12 R DS(on) [mΩ] 240 I D [A] 6V 160 9 6 6V 5.5 V 6.5 V 7V 8V 80 3 10 V 5V 4.5 V 0 0 0 1 2 3 4 0 5 50 V DS [V] 100 150 100 150 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 320 200 160 240 g fs [S] I D [A] 120 160 80 175 °C 80 40 25 °C 0 0 0 2 4 6 0 Rev. 1.03 50 I D [A] V GS [V] page 5 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=90 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 8 4 7 3.5 6 3 5 900 µA 90 µA 2.5 98% V GS(th) [V] R DS(on) [mΩ] parameter: I D 4 10V 2 3 1.5 2 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss Coss 25 °C 102 175 °C, 98% 175 °C I F [A] C [pF] 103 25 °C, 98% 102 101 Crss 101 100 0 20 40 60 V DS [V] Rev. 1.03 0 0.5 1 1.5 2 V SD [V] page 6 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=90 A pulsed parameter: T j(start) parameter: V DD 100 12 25 °C 30 V 10 100 °C 12 V 48 V 8 V GS [V] I AS [A] 150 °C 10 6 4 2 1 0 1 10 100 1000 0 20 40 60 80 100 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 70 V GS Qg V BR(DSS) [V] 65 60 V g s(th) 55 Q g(th) Q sw Q gs 50 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.03 page 7 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G PG-TO220-3 Rev. 1.03 page 8 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G PG-TO262-3 (I²-Pak) Rev. 1.03 page 9 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G PG-TO263 (D²-Pak) Rev. 1.03 page 10 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.03 page 11 2009-12-17