MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT−23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common cathode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. The MMBZ27VCLT1G/SZMMBZ27VCLT1G can be used to protect a single wire communication network form EMI and ESD transient surge voltages. The MMBZ27VCLT1G/SZMMBZ27VCLT1G is recommended by the Society of Automotive Engineers (SAE), February 2000, J2411 “Single Wire Can Network for Vehicle Applications” specification as a solution for transient voltage problems. SOT−23 CASE 318 STYLE 9 ANODE 1 3 CATHODE ANODE 2 MARKING DIAGRAM XXX MG G 1 Specification Features: • SOT−23 Package Allows Either Two Separate Unidirectional • • • • • • • • Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range − 12.8 V, 22 V Standard Zener Breakdown Voltage Range − 15 V, 27 V Peak Power − 40 W @ 1.0 ms (Bidirectional), per Figure 5 Waveform ESD Rating of Class 3B (exceeding 16 kV) per the Human Body Model Low Leakage < 100 nA Flammability Rating: UL 94 V−O SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Pb−Free Packages are Available* Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. 12 1 XXX = 15D or 27C M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MMBZ15VDLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZMMBZ15VDLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBZ15VDLT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SZMMBZ15VDLT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBZ27VCLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZMMBZ27VCLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBZ15VDLT1/D MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G MAXIMUM RATINGS Symbol Value Unit Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C Rating Ppk 40 Watts Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C Derate above 25°C °PD° 225 1.8 mW mW/°C Thermal Resistance Junction−to−Ambient RqJA 556 °C/W Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C Derate above 25°C °PD° 300 2.4 ° mW mW/°C Thermal Resistance Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C TL 260 °C Lead Solder Temperature − Maximum (10 Second Duration) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6. 2. FR−5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) I UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT VBR IF Parameter VC VBR VRWM Working Peak Reverse Voltage V IR VF IT Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF IPP Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) VC @ IPP (Note 5) Breakdown Voltage Device* MMBZ15VDLT1G/T3G VBR (Note 4) (V) @ IT VC IPP VBR Device Marking VRWM IR @ VRWM Volts nA Min Nom Max mA V A mV/5C 15D 12.8 100 14.3 15 15.8 1.0 21.2 1.9 12 (VF = 1.1 V Max @ IF = 200 mA) VC @ IPP (Note 5) Breakdown Voltage Device* MMBZ27VCLT1G/T3G VBR (Note 4) (V) @ IT VC IPP VBR Device Marking VRWM IR @ VRWM Volts nA Min Nom Max mA V A mV/5C 27C 22 50 25.65 27 28.35 1.0 38 1.0 26 4. VBR measured at pulse test current IT at an ambient temperature of 25°C. 5. Surge current waveform per Figure 5 and derate per Figure 6 *Include SZ-prefix devices where applicable. http://onsemi.com 2 MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G TYPICAL CHARACTERISTICS MMBZ15VDLT1G, SZMMBZ15VDLT1G MMBZ27VCLT1G, SZMMBZ27VCLT1G BREAKDOWN VOLTAGE (VOLTS) (VBR @ I T ) BREAKDOWN VOLTAGE (VOLTS) (VBR @ I T ) 17 BIDIRECTIONAL 16 15 14 UNIDIRECTIONAL 13 -40 +125 +25 +85 TEMPERATURE (°C) 29 BIDIRECTIONAL 28 27 26 25 -55 Figure 2. Typical Breakdown Voltage versus Temperature 1000 300 100 250 PD , POWER DISSIPATION (mW) IR (nA) Figure 1. Typical Breakdown Voltage versus Temperature 10 1 0.1 0.01 -40 +25 +85 TEMPERATURE (°C) ALUMINA SUBSTRATE 200 150 100 FR-5 BOARD 50 0 +125 0 PEAK VALUE—IPP VALUE (%) 100 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. IPP HALF VALUE— 2 50 tP 0 0 1 2 3 t, TIME (ms) 4 25 50 75 100 125 TEMPERATURE (°C) 150 175 Figure 4. Steady State Power Derating Curve PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25 ° C Figure 3. Typical Leakage Current versus Temperature tr ≤ 10 ms +125 +25 +85 TEMPERATURE (°C) 100 90 80 70 60 50 40 30 20 10 0 0 Figure 5. Pulse Waveform 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 6. Pulse Derating Curve http://onsemi.com 3 175 200 MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G TYPICAL APPLICATIONS VBatt ECU Connector Single Wire CAN Transceiver 47 mH Bus RLoad 9.09 kW 1% * Load CLoad 220 pF 10% Loss of Ground Protection Circuit GND *ESD Protection − MMBZ27VCLT1G or equivalent. May be located in each ECU (CLoad needs to be reduced accordingly) or at a central point near the DLC. Figure 7. Single Wire CAN Network Figure is the recommended solution for transient EMI/ESD protection. This circuit is shown in the Society of Automotive Engineers February, 2000 J2411 “Single Wire CAN Network for Vehicle Applications” specification (Figure 6, page 11). Note: the dual common anode zener configuration shown above is electrically equivalent to a dual common cathode zener configuration. http://onsemi.com 4 MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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