VISHAY ST330SPBF_12

ST330SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 330 A
FEATURES
• Center amplifying gate
• International standard case TO-209AE (TO-118)
RoHS
• Hermetic metal case with ceramic insulator
COMPLIANT
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Lead (Pb)-free
• Designed and qualified for industrial level
TO-209AE (TO-118)
TYPICAL APPLICATIONS
• DC motor controls
PRODUCT SUMMARY
• Controlled DC power supplies
IT(AV)
330 A
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
IT(RMS)
VALUES
UNITS
330
A
75
°C
520
ITSM
I2 t
50 Hz
9000
60 Hz
9420
50 Hz
405
60 Hz
370
VDRM/VRRM
tq
Typical
TJ
A
kA2s
400 to 2000
V
100
µs
- 40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
ST330S
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE PEAK
IDRM/IRRM MAXIMUM
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM
AND OFF-STATE VOLTAGE
V
mA
V
04
400
500
08
800
900
12
1200
1300
16
1600
1700
20
2000
2100
Document Number: 94409
Revision: 11-Aug-08
For technical questions, contact: [email protected]
50
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1
ST330SPbF Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 330 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle
non-repetitive surge current
ITSM
VALUES
UNITS
180° conduction, half sine wave
TEST CONDITIONS
330
A
75
°C
DC at 75 °C case temperature
520
t = 10 ms
9000
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2 t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2√t for fusing
I2√t
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
9420
Sinusoidal half wave,
initial TJ = TJ maximum
7920
405
370
287
100 % VRRM
reapplied
4050
Low level value of threshold voltage
VT(TO)1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
0.834
VT(TO)2
(I > π x IT(AV)), TJ = TJ maximum
0.898
Low level value of on-state slope resistance
rt1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
0.687
High level value of on-state slope resistance
rt2
(I > π x IT(AV)), TJ = TJ maximum
0.636
Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.52
VTM
Maximum holding current
IH
Typical latching current
IL
kA2s
262
t = 0.1 to 10 ms, no voltage reapplied
High level value of threshold voltage
Maximum on-state voltage
A
7570
600
TJ = 25 °C, anode supply 12 V resistive load
1000
kA2√s
V
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
Gate drive 20 V, 20 Ω, tr ≤ 1 µs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
VALUES
UNITS
1000
A/µs
Typical delay time
td
Gate current A, dIg/dt = 1 A/µs
Vd = 0.67 % VDRM, TJ = 25 °C
1.0
Typical turn-off time
tq
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs
100
SYMBOL
TEST CONDITIONS
VALUES
UNITS
µs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/µs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
50
mA
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For technical questions, contact: [email protected]
Document Number: 94409
Revision: 11-Aug-08
ST330SPbF Series
Phase Control Thyristors
(Stud Version), 330 A
Vishay High Power Products
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
VALUES
TEST CONDITIONS
TYP.
TJ = TJ maximum, tp ≤ 5 ms
10.0
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
TJ = TJ maximum, tp ≤ 5 ms
3.0
TJ = 25 °C
IGT
TJ = - 40 °C
DC gate voltage required to trigger
VGT
TJ = 25 °C
TJ = 125 °C
DC gate current not to trigger
IGD
DC gate voltage not to trigger
VGD
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
TJ = TJ maximum
A
V
5.0
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
TJ = 125 °C
UNITS
W
20
TJ = TJ maximum, tp ≤ 5 ms
TJ = - 40 °C
DC gate current required to trigger
MAX.
200
-
100
200
50
-
2.5
-
1.8
3
1.1
-
mA
V
10
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction temperature range
TEST CONDITIONS
TJ
- 40 to 125
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance, junction to case
RthJC
Maximum thermal resistance, case to heatsink
RthC-hs
Mounting torque, ± 10 %
DC operation
0.10
Mounting surface, smooth, flat and greased
0.03
Non-lubricated threads
48.5
(425)
N·m
(lbf · in)
535
g
Approximate weight
Case style
°C
See dimension - link at the end of datasheet
K/W
TO-209AE (TO-118)
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.011
0.008
120°
0.013
0.014
90°
0.017
0.018
60°
0.025
0.026
30°
0.041
0.042
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94409
Revision: 11-Aug-08
For technical questions, contact: [email protected]
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3
ST330SPbF Series
Vishay High Power Products Phase Control Thyristors
ST330S Series
RthJC (DC) = 0.10 K/ W
120
110
Conduc tion Angle
100
30°
90
60°
90°
120°
80
180°
70
0
50
100
150
200
250
300
130
Maximum Allowable Case Temperature (°C)
130
350
ST330S Series
RthJC (DC) = 0.10 K/ W
120
110
100
Conduc tion Period
90
30°
80
60°
90°
120°
70
180°
DC
60
0
100
200
300
400
500
600
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
480
elt
-D
a
0.2
K/
W
RMSLimit
280
K/
W
W
K/
320
K/
W
03
0.
360
0.
08
0.
12
=
400
A
180°
120°
90°
60°
30°
440
hS
R t
R
Maximum Average On-state Power Loss(W)
Maximum Allowable Case Temperature (°C)
(Stud Version), 330 A
240
200
Conduction Angle
160
120
ST330SSeries
TJ = 125°C
80
40
0.3
K/ W
0.4
K/ W
0.6 K
/W
1.2 K/
W
0
0
50
100
150
200
250
300
350
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Average On-state Current (A)
650
600
550
DC
180°
120°
90°
60°
30°
03
0.
W
K/
0.
08
=
K/
W
0.1
2K
/W
ta
el
-D
R
400
350
SA
th
500
450
R
Maximum Average On-state Power Loss (W)
Fig. 3 - On-State Power Loss Characteristics
0.2
300 RMSLimit
250
200
Conduction Period
150
ST330SSeries
TJ = 125°C
100
50
K/ W
0.3
K/ W
0.4
K/ W
0.6 K
/W
1.2 K/ W
0
0
100
200
300
400
500
Average On-state Current (A)
600
25
50
75
100
125
Maximum Allowable Ambient Temp erature (°C)
Fig. 4 - On-State Power Loss Characteristics
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For technical questions, contact: [email protected]
Document Number: 94409
Revision: 11-Aug-08
ST330SPbF Series
Peak Half Sine Wave On-state Current (A)
8000
Peak Half Sine Wave On-state Current (A)
Phase Control Thyristors
(Stud Version), 330 A
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
7500
7000
6500
6000
5500
5000
4500
ST330S Series
4000
3500
1
10
100
Vishay High Power Products
9000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
8000 Of Conduction May Not Be Maintained.
Initial TJ = 125°C
No Voltage Reapp lied
7000
Rated VRRM Reapplied
6000
5000
4000
ST330SSeries
3000
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cyc le Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
10000
1000
Tj = 25 °C
Tj = 125 °C
ST330S Series
100
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (K/ W)
Fig. 7 - On-State Voltage Drop Characteristics
1
Steady State Value
RthJC = 0.10 K/ W
(DC Operation)
0.1
0.01
ST330SSeries
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Document Number: 94409
Revision: 11-Aug-08
For technical questions, contact: [email protected]
www.vishay.com
5
ST330SPbF Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 330 A
Rectangular gate pulse
a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr<=1 µs
b) Rec ommended load line for
<=30% rated di/ dt : 10V, 10ohms
10
tr<=1 µs
(1) PGM = 10W,
(2) PGM = 20W,
(3) PGM = 40W,
(4) PGM = 60W,
tp = 4ms
tp = 2ms
tp = 1ms
tp = 0.66ms
(a)
(b)
1
Tj=-40 °C
Tj=25 °C
Tj=125 °C
Instantaneous Gate Voltage (V)
100
(1)
(2)
(3) (4)
VGD
IGD
0.1
0.001
Frequency Limited by PG(AV)
Device: ST330SSeries
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
ST
33
0
S
16
P
0
PbF
1
2
3
4
5
6
7
8
1
-
Thyristor
2
-
Essential part number
3
-
0 = Converter grade
4
-
S = Compression bonding stud
5
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-
P = Stud base 3/4"-16UNF-2A threads
7
-
0 = Eyelet terminals (gate and auxiliary cathode leads)
8
-
1 = Fast-on terminals (gate and auxiliary cathode leads)
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
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http://www.vishay.com/doc?95080
For technical questions, contact: [email protected]
Document Number: 94409
Revision: 11-Aug-08
Outline Dimensions
Vishay Semiconductors
TO-209AE (TO-118)
DIMENSIONS in millimeters (inches)
Ceramic housing
22 (0.87) MAX.
4.3 (0.17) DIA.
White gate
10.5 (0.41) NOM.
Red silicon rubber
245 (9.65) ± 10 (0.39)
Red cathode
245 (9.65)
255 (10.04)
38 (1.50)
MAX. DIA.
White shrink
27.5 (1.08)
MAX.
47 (1.85)
MAX.
21 (0.82) MAX.
Red shrink
SW 45
3/4"16 UNF-2A (1)
49 (1.92) MAX.
Fast-on terminals
AMP. 280000-1
REF-250
22
(0.
86
)M
IN
.
9.5
(0.
3
7)
MI
N.
4.5 (0.18) MAX.
Flexible leads
C.S. 50 mm2
(0.078 s.i.)
Note
(1) For metric device: M24 x 1.5 - length 21 (0.83) maximum
Document Number: 95080
Revision: 02-Aug-07
For technical questions, contact: [email protected]
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Revision: 12-Mar-12
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Document Number: 91000