50RIA Series Vishay High Power Products Medium Power Thyristors (Stud Version), 50 A FEATURES • High current rating RoHS • Excellent dynamic characteristics COMPLIANT • dV/dt = 1000 V/µs option • Superior surge capabilities • Standard package • Metric threads version available • Types up to 1200 V VDRM/VRRM TO-208AC (TO-65) • RoHS compliant TYPICAL APPLICATIONS • Phase control applications in converters PRODUCT SUMMARY • Lighting circuits IT(AV) 50 A • Battery charges • Regulated power supplies and temperature and speed control circuit • Can be supplied to meet stringent military, aerospace and other high reliability requirements MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS TC IT(RMS) ITSM I2 t TJ Document Number: 93711 Revision: 19-Sep-08 UNITS 50 A 94 °C 80 A 50 Hz 1430 60 Hz 1490 50 Hz 10.18 60 Hz 9.30 A VDRM/VRRM tq VALUES Typical kA2s 100 to 1200 V 110 µs - 40 to 125 °C For technical questions, contact: [email protected] www.vishay.com 1 50RIA Series Vishay High Power Products Medium Power Thyristors (Stud Version), 50 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE (1) V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE (2) V 10 100 150 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 50RIA IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 15 Notes (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs (2) For voltage pulses with t ≤ 5 ms p ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) TEST CONDITIONS 180° sinusoidal conduction IT(RMS) t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t No voltage reapplied UNITS 50 A 94 °C 80 A 1430 No voltage reapplied 100 % VRRM reapplied VALUES 1490 1200 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 1255 10.18 9.30 7.20 kA2s 6.56 t = 0.1 to 10 ms, no voltage reapplied, TJ = TJ maximum 101.8 Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.94 High level value of threshold voltage VT(TO)2 (π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ maximum 1.08 Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 4.08 High level value of on-state slope resistance rt2 (π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ maximum 3.34 Maximum on-state voltage VTM Ipk = 157 A, TJ = 25 °C 1.60 200 400 kA2√s V mΩ Maximum holding current IH TJ = 25 °C, anode supply 22 V, resistive load, initial IT = 2 A Latching current IL Anode supply 6 V, resistive load www.vishay.com 2 A For technical questions, contact: [email protected] V mA Document Number: 93711 Revision: 19-Sep-08 50RIA Series Medium Power Thyristors Vishay High Power Products (Stud Version), 50 A SWITCHING PARAMETER Maximum rate of rise of turned-on current SYMBOL VDRM ≤ 600 V VDRM ≤ 1600 V dI/dt TEST CONDITIONS TC = 125 °C, VDM = Rated VDRM, Gate pulse = 20 V, 15 Ω, tp = 6 µs, tr = 0.1 µs maximum ITM = (2 x rated dI/dt) A VALUES UNITS 200 A/µs 100 Typical delay time td TC = 25 °C, VDM = Rated VDRM, ITM = 10 A dc resistive circuit Gate pulse = 10 V, 15 Ω source, tp = 20 µs 0.9 Typical turn-off time tq TC = 125 °C, ITM = 50 A, reapplied dV/dt = 20 V/µs dIr/dt = - 10 A/µs, VR = 50 V 110 µs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage SYMBOL dV/dt TEST CONDITIONS VALUES TJ = TJ maximum linear to 100 % rated VDRM 200 TJ = TJ maximum linear to 67 % rated VDRM 500 (1) UNITS V/µs Note (1) Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. 50RIA120S90 TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power SYMBOL PGM TEST CONDITIONS TJ = TJ maximum, tp ≤ 5 ms VALUES 10 W PG(AV) 2.5 Maximum peak positive gate current IGM 2.5 Maximum peak positive gate voltage +VGM 20 Maximum peak negative gate voltage -VGM 10 IGT TJ = 25 °C TJ = 125 °C DC gate voltage required to trigger VGT TJ = - 40 °C 250 Maximum required gate trigger current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied TJ = 25 °C DC gate current not to trigger IGD TJ = TJ maximum, VDRM = Rated voltage DC gate voltage not to trigger VGD TJ = TJ maximum Document Number: 93711 Revision: 19-Sep-08 A V TJ = - 40 °C DC gate current required to trigger UNITS 100 mA 50 3.5 V 2.5 Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied For technical questions, contact: [email protected] 5.0 mA 0.2 V www.vishay.com 3 50RIA Series Vishay High Power Products Medium Power Thyristors (Stud Version), 50 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, case to heatsink RthCS VALUES UNITS - 40 to 125 °C DC operation 0.35 K/W Mounting surface, smooth, flat and greased 0.25 Non-lubricated threads 3.4 + 0 - 10 % (30) Lubricated threads 2.3 + 0 - 10 % (20) Allowable mounting torque Approximate weight Case style See dimensions - link at the end of datasheet N·m (lbf · in) 28 g 1.0 oz. TO-208AC (TO-65) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.078 0.057 120° 0.094 0.098 90° 0.120 0.130 60° 0.176 0.183 30° 0.294 0.296 TEST CONDITIONS UNITS TJ = TJ maximum K/W 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 50RIA Series RthJC (DC) = 0.35 K/W 120 Conduction Angle 110 30° 60° 90° 100 120° 180° 90 0 www.vishay.com 4 10 20 30 40 50 60 130 50RIA Series RthJC (DC) = 0.35 K/W 120 110 Conduction Period 100 90 60° 90° 120° 30° 180° DC 80 0 10 20 30 40 50 60 70 80 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics For technical questions, contact: [email protected] Document Number: 93711 Revision: 19-Sep-08 50RIA Series 80 1300 180° 120° 90° 60° 30° 70 60 Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Medium Power Thyristors Vishay High Power Products (Stud Version), 50 A 50 RMS Limit 40 30 Conduction Angle 20 50RIA Series TJ = 125°C 10 0 0 10 20 30 40 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125°C 1100 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1000 900 800 700 50RIA Series 600 50 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Average On-state Current (A) Fig. 3 - On-State Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 100 1500 DC 180° 120° 90° 60° 30° 90 80 70 60 Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) 1200 50 RMS Limit 40 30 Conduction Period 20 50RIA Series TJ = 125°C 10 0 0 10 20 30 40 50 60 70 80 1400 1300 1200 1100 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied 1000 900 800 700 600 50RIA Series 500 0.01 0.1 1 Pulse Train Duration (s) Average On-state Current (A) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 4 - On-State Power Loss Characteristics Instantaneous On-state Current (A) 1000 100 TJ = 25°C TJ = 125°C 10 50RIA Series 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Document Number: 93711 Revision: 19-Sep-08 For technical questions, contact: [email protected] www.vishay.com 5 50RIA Series Vishay High Power Products Medium Power Thyristors Transient Thermal Impedance ZthJ-hs (K/W) (Stud Version), 50 A 1 Steady State Value RthJ-hs = 0.35 K/W 0.1 50RIA Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 30 ohms; tr<=0.5 µs b) Recommended load line for <=30% rated di/dt : 20V, 65 ohms tr<=1 µs 10 (b) (a) Tj=125 °C 1 VGD IGD 0.1 0.001 (1) PGM = 10W, tp = 5ms (2) PGM = 20W, tp = 2.5ms (3) PGM = 50W, tp = 1ms (4) PGM = 100W, tp = 500µs Tj=-40 °C Tj=25 °C Instantaneous Gate Voltage (V) 100 (1) (2) 50RIA Series 0.01 0.1 1 (3) (4) Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code 50 RIA 120 S90 M 1 2 3 4 5 1 - Current code 2 - Essential part number 3 - Voltage code x 10 = VRRM (see Voltage Ratings table) 4 - Critical dV/dt: None = 500 V/µs (standard value) S90 = 1000 V/µs (special selection) 5 - None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A M = Stud base TO-208AC (TO-65) M6 x 1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 http://www.vishay.com/doc?95334 For technical questions, contact: [email protected] Document Number: 93711 Revision: 19-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1