http://www.fujielectric.com/products/semiconductor/ 6MBI100VX-120-50 IGBT Modules IGBT MODULE (V series) 1200V / 100A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Symbols Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Junction temperature Conditions VCES VGES Ic Ic pulse -Ic -Ic pulse Pc Tj Continuous 1ms 1ms 1 device Tc=80°C Tc=80°C Maximum ratings 1200 ±20 100 200 100 200 520 175 Operating junciton temperature (under switching conditions) Tjop 150 Case temperature Storage temperature Tc Tstg 125 -40 ~ +125 Isolation voltage Between terminal and copper base (*1) Viso Between thermistor and others (*2) AC : 1min. Screw torque Mounting (*3) M5 - V V A W °C 2500 VAC 3.5 Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) 1 Units 6MBI100VX-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols Conditions ICES IGES VGE (th) VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 100mA VCE (sat) (terminal) Collector-Emitter saturation voltage Inverter VCE (sat) (chip) Input capacitance Turn-on time Turn-off time Cies ton tr tr (i) toff tf VF (terminal) Tj=25°C Tj=125°C Tj=150°C Tj=25°C VGE = 15V Tj=125°C IC = 100A Tj=150°C VCE = 10V, VGE = 0V, f = 1MHz VGE = 15V IC = 100A VCC = 600V IC = 100A VGE = +15 / -15V RG = 1.6Ω IF = 100A Forward on voltage VF (chip) IF = 100A trr Resistance R B value B IF = 100A T = 25°C T = 100°C T = 25 / 50°C Items Symbols Conditions Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*4) Rth(c-f) Thermistor Reverse recovery time Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Characteristics min. typ. max. 1.0 200 6.0 6.5 7.0 2.25 2.70 2.55 2.60 1.75 2.20 2.05 2.10 9.1 0.39 1.20 0.09 0.60 0.03 0.53 1.00 0.06 0.30 2.20 2.65 2.35 2.30 1.70 2.15 1.85 1.80 0.35 5000 465 495 520 3305 3375 3450 Units mA nA V V nF µs V µs Ω K Thermal resistance characteristics Inverter IGBT Inverter FWD with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. Equivalent Circuit Schematic 2 Characteristics min. typ. max. 0.29 0.44 0.05 - Units °C/W 6MBI100VX-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip VGE=20V 15V 200 12V VGE=20V Collector current : IC [A] Collector current : IC [A] 200 Tj= 150oC / chip 150 10V 100 50 12V 15V 150 100 10V 50 8V 8V 0 0 0 1 2 3 4 5 0 3 4 5 Collector-Emitter voltage: VCE [V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25oC / chip Collector - Emitter voltage : VCE [V] Tj=25°C 150°C 150 125°C 100 50 8 6 4 Ic=200A Ic=100A Ic= 50A 2 0 0 0 1 2 3 4 5 5 10 [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) Collector - Emitter voltage : VCE [200V/div] Gate - Emitter voltage : VGE [5V/div] 100.0 Cies 1.0 Cres Coes 0.1 0 10 20 30 20 25 [ Inverter ] Dynamic gate charge (typ.) Vcc=600V, Ic=100A, Tj= 25°C VGE=0V, f= 1MHz, Tj= 25oC 10.0 15 Gate - Emitter voltage: VGE [V] Collector-Emitter voltage: VCE [V] Capacitance: Cies, Coes, Cres [nF] 2 Collector-Emitter voltage: VCE [V] 200 Collector current : IC [A] 1 40 VGE VCE 0 Collector - Emitter voltage: VCE [V] 250 500 750 Gate charge: Qg [nC] 3 1000 6MBI100VX-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=1.6Ω, Tj= 150°C 10000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=1.6Ω, Tj= 125°C toff ton tr 100 tf 10 0 50 100 150 200 10000 1000 toff ton tr 100 tf 10 250 0 Collector current: IC [A] 10000 toff 1000 ton tr 100 tf 10 0.1 1.0 10.0 150 200 250 100.0 30 Eon(150°C) Eon(125°C) 20 Eoff(150°C) Eoff(125°C) Err(150°C) Err(125°C) 10 0 0 50 100 150 200 250 Collector current: IC [A] Gate resistance : RG [Ω] [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 1.6Ω ,Tj <= 125°C [ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=600V, Ic=100A, VGE=±15V 30 250 Collector current: IC [A] Switching loss : Eon, Eoff, Err [mJ/pulse ] 100 Collector current: IC [A] [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=1.6Ω Switching loss : Eon, Eoff, Err [mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] [ Inverter ] Switching time vs. gate resistance (typ.) Vcc=600V, Ic=100A, VGE=±15V, Tj= 125°C 50 20 Eon(150°C) Eon(125°C) Eoff(150°C) Eoff(125°C) Err(150°C) Err(125°C) 10 200 150 RBSOA (Repetitive pulse) 100 50 0 0 0 0 1 10 200 400 600 800 1000 1200 1400 1600 100 Collector-Emitter voltage : VCE [V] Gate resistance : RG [Ω] 4 6MBI100VX-120-50 [ Inverter ] Forward current vs. forward on voltage (typ.) chip Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [A] 200 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Tj=25°C 150 Tj=150°C Tj=125°C 100 50 0 1 2 3 10 0 50 100 150 200 Forward on voltage : VF [V] Forward current : IF [A] Transient thermal resistance (max.) [ Thermistor ] Temperature characteristic (typ.) 10.00 100 1.00 FWD[Inverter] IGBT[Inverter] 0.10 0.01 0.001 trr(150°C) trr(125°C) Irr(150°C) Irr(125°C) 100 4 Resistance : R [kΩ] Thermal resistanse : Rth(j-c) [ °C/W ] 0 1000 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, RG=1.6Ω 0.010 0.100 10 1 0.1 1.000 -60 Pulse width : Pw [sec] -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [°C ] Outline Drawings, mm 5 250 6MBI100VX-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. 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