VISHAY LL4148_12

LL4148, LL4448
Vishay Semiconductors
Small Signal Fast Switching Diodes
Features
• Silicon epitaxial planar diodes
• Electrical data identical with the devices
1N4148 and 1N4448 respectively
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
94 9371
Applications
Mechanical Data
• Extreme fast switches
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
Parts Table
Part
Type differentiation
Ordering code
Marking code
Remarks
LL4148
VRRM = 100 V,
VF = max. 1000 mV at IF = 50 mA
LL4148-GS18 or
LL4148-GS08
-
Tape and reel
LL4448
VRRM = 100 V,
VF = max. 1000 mV at IF = 100 mA
LL4448-GS18 or
LL4448-GS08
-
Tape and reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
tp = 1 µs
Repetitive peak forward current
Forward continuous current
VR = 0
Average forward current
Symbol
Value
Unit
VRRM
100
V
VR
75
V
IFSM
2
A
IFRM
500
mA
IF
300
mA
IFAV
150
mA
Ptot
Power dissipation
500
1)
mW
Note
1) Valid provided that electrodes are kept at ambient temperature
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Symbol
RthJA
Value
Unit
1)
K/W
300
Tj
175
°C
Tstg
- 65 to + 175
°C
Note
1)
Valid provided that electrodes are kept at ambient temperature
Document Number 85557
Rev. 1.9, 01-Sep-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
LL4148, LL4448
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Min.
IF = 5 mA
LL4448
VF
620
IF = 50 mA
LL4148
VF
IF = 100 mA
LL4448
VF
Forward voltage
Typ.
Max.
Unit
720
mV
860
1000
mV
930
1000
mV
VR = 20 V
IR
25
nA
VR = 20 V, Tj = 150 °C
IR
50
µA
VR = 75 V
IR
5
µA
Breakdown voltage
IR = 100 µA, tp/T = 0.01,
tp = 0.3 ms
V(BR)
Diode capacitance
VR = 0, f = 1 MHz, VHF = 50 mV
CD
4
pF
IF = IR = 10 mA,
iR = 1 mA
trr
8
ns
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
trr
4
ns
Reverse current
Reverse recovery time
100
V
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
1000
IR- Reverse Current (nA)
IF - Forward Current (mA)
LL4148
100
Scattering Limit
10
1
Tj = 25 °C
100
Scattering Limit
10
Tj = 25 °C
0.1
1
0
0.4
0.8
1.2
1.6
2.0
V F - Forward Voltage (V)
94 9096
1
Figure 1. Forward Current vs. Forward Voltage
100
Figure 3. Reverse Current vs. Reverse Voltage
3.0
1000
CD - Diode Capacitance (pF)
LL4448
IF - Forward Current (mA)
10
VR- Reverse Voltage (V)
94 9098
100
Scattering Limit
10
1
f = 1 MHz
2.5
Tj = 25 °C
2.0
1.5
1.0
0.5
Tj = 25 ° C
0
0.1
0
94 9097
0.4
0.8
1.2
1.6
V F - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
www.vishay.com
2
0.1
2.0
94 9099
1
10
100
VR - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
For technical questions within your region, please contact one of the following: Document Number 85557
[email protected], [email protected], [email protected]
Rev. 1.9, 01-Sep-10
LL4148, LL4448
Vishay Semiconductors
Package Dimensions in millimeters (inches): MiniMELF SOD-80
1.6 (0.063)
1.4 (0.055)
Cathode indification
*
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
* The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
1.25 (0.49) min.
2 (0.079) min.
2.5 (0.098) max.
5 (0.197) ref.
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
Document Number 85557
Rev. 1.9, 01-Sep-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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www.vishay.com
Vishay
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Revision: 12-Mar-12
1
Document Number: 91000