WILLAS FM120-M+ THRU SCS521G FM1200-M+ 100mA Surface Mount Schottky Barrier Rectifiers-30V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-723 SOD-123+ Package PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. zApplication • Low power loss, high efficiency. • High current Rectifying smallcapability, power low forward voltage drop. 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. zFeatures Lead-free parts meet environmental standards of • 1) Ultra small mold type. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 2) • Low F RoHSVproduct for packing code suffix "G" SOD - 723 Halogen free product for packing code suffix "H" 3) High reliability Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H zConstruction , • Terminals :Plated terminals, solderable per MIL-STD-750 1 CATHODE 0.031(0.8) Typ. Silicon epitaxial planer 2 ANODE 0.031(0.8) Typ. Method 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band z We declare that the material of product Mounting Position : Any •compliance with RoHS requirements. is available •Pb-Free Weight : package Approximated 0.011 gram RoHS product for packing code suffix ”G” MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Halogen free product for packing code suffix “H” Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% zAbsolute maximum ratings (Ta=25°C) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH RATINGS Limits Parameter Symbol12 Unit Marking Code 13 14 15 16 Reverse voltage (DC) 30 V 30 40 50 60V Maximum Recurrent Peak Reverse Voltage VRRM R 20 verage rectified forward current 100 A mA 21 28 35 42 Maximum RMS Voltage VRMS Io 14 （60Hz・1cyc） For ward current surge peak 500 I mA FSM Maximum DC Blocking Voltage 20 30 40 50 60 VDC 125 Junction temperature Tj ℃ Maximum Average Forward Rectified Current IO 1.0 -40 to +125 Storage temperature Tstg ℃ Peak Forward Surge Current 8.3 ms single half sine-wave zElectrical characteristics (Ta=25°C) superimposed on rated load (JEDEC method) Typical Thermal Parameter Resistance (Note 2) ward Capacitance voltage TypicalFor Junction (Note 1) Min. RΘJA C- J Typ. - IR T-J - Storage Temperature Range TSTG 18 80 10 100 115 150 120 200 56 70 105 140 80 100 150 200 30 IFSM Symbol VF Operating Temperature Reverse currentRange FM180-MH FM1100-MH FM1150-MH FM1200-MH Max. 0.35 -55 to +125 10 Unit V µA Conditions 40 IF=10mA120 VR=10V -55 to +150 - 65 to +175 CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum z Forward Voltage at 1.0A DC zDOevice M ark ing Maximum Average Reverse Current at @T A=25℃ Device Rated DC Blocking Voltage NOTES: SCS521G Marking @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 F 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SCS521G FM1200-M+ 100mA Surface Mount Schottky Barrier Rectifiers-30V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-723 SOD-123+ Package PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers Electrical characteristic curves (Ta=25°C) better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to 10000 Ta=25℃ Ta=-25℃ 10 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 20 Method 2026 • 280 Polarity : Indicated by cathode band Mounting Position : Any • 270 • Weight : Approximated 0.011 gram 260 10 AVE:2.017uA 16Dimensions in inches and (millimeters) 15 14 13 12 AVE:17.34pF PEAK SURGE FORWARD CURRENT:IFSM(A) 15 8.3ms Maximum DC Blocking Voltage 10 Maximum Average Forward Rectified Current AVE:3.90A Peak Forward5 Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) VRRM 12 20 Ifsm VRMS 14 VDC 20 5 Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range 30 28 40 10 35 42 56 50 60 5 70 105 140 100 150 200 10 100 +150 0.1 0.50 0.06 IR D=1/2 DC Sin(θ＝180) 0.04 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.08 300us 0.9 0.85 0.92 0.5 0.06 10 D=1/2 0.04 DC Sin(θ＝180) 0 0 1000 0.70 0.02 0.02 time 1ms to 2- Thermal Resistance From Junction Ambient TIME:t(s) Rth-t CHARACTERISTICS 120 200 TIME:t(ms) -55 to IFSM-t CHARACTERISTICS REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) IF=100mA 10 115 150 - 65 to +175 VF Mounted on epoxy board IM=10mA 80 40 120 1 100 t 10 100 1.0 30 NUMBER OF CYCLES -55 to +125 IFSM-CYCLE CHARACTERISTICS 0.08 Rth(j-c) @T A=125℃ Rated DC Blocking Voltage 2012-06 18 80 Ifsm SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Average Reverse Current at @T A=25℃ 0.1 16 60 0 0.1 CHARACTERISTICS Rth(j-a) Maximum Forward Voltage at 1.0A DC 10 0.001 10 15 50 TSTG NOTES: 8.3ms 21 8.3ms 1cyc IFSM TJ IFSM DISRESION MAP 14 40 IO 0RΘJA 1 CJ 0 Typical Thermal Resistance (Note 2) 13 30 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 Maximum RMS Voltage 100 Ct DISPERSION MAP SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH IfsmVoltage1cyc Maximum Recurrent Peak Reverse PEAK SURGE FORWARD CURRENT:IFSM(A) 17 0.031(0.8) Typ. 10 0 20 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 18 11 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1000 20 Ta=25℃ f=1MHz VR=0V n=10pcs 19 AVE:270.2mV RATINGS 15 20 15 5 10 0.031(0.8) Typ. Ta=25℃ VR=10V n=30pcs 20 Marking Code 2012-11 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) 290 0 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant 30 Case : Molded plastic, SOD-123H • 300 Ta=25℃ , IF=10mA • Terminals :Plated terminals, solderable 25 per MIL-STD-750 n=30pcs 250 0.071(1.8) 0.056(1.4) 30 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. VF DISPERSION MAP IR DISPERSION MAP For capacitive load, derate current by 20% 0.012(0.3) Typ. 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Mechanical data FORWARD VOLTAGE:VF(mV) Ta=75℃ 1 0 Halogen free product for packing code suffix "H" f=1MHｚ 0.146(3.7) 0.130(3.3) MIL-STD-19500 /228 RoHS product for packing code suffix "G"0.01 • 0.001 0 100 200 300 400 500 600 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) board space. Ta=125℃ power loss, high efficiency. • Low 100 1000 current capability, low forward voltage drop. • HighTa=75℃ 10 surge capability. 100 • High Ta=-25℃ for overvoltage protection. • Guardring 1 10 • Ultra high-speed switching. Ta=25℃ 0.1 1 epitaxial planar chip, metal silicon junction. • Silicon parts meet environmental standards of • Lead-free 0.01 0.1 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 1000 optimize SOD-123H 100 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SCS521G FM1200-M 100mA Surface Mount Schottky Barrier Rectifiers-30V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-723 SOD-123+ Package PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.1 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Sin(θ＝180) 0.146(3.7) 0.130(3.3) 0.3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) • Low power loss, high efficiency. 0.3 low forward voltage drop. • High current capability, Io 0A • High surge capability. 0V VR • Guardring for overvoltage protection. t D=t/T 0.2 VR=15V • Ultra high-speed switching. DC T Tj=125℃ • Silicon epitaxial planar chip, metal silicon junction. D=1/2 • Lead-free parts meet environmental standards of 0A 0V 0.2 t DC T VR D=t/T VR=15V Tj=125℃ 0.071(1.8) 0.056(1.4) D=1/2 0.1 Sin(θ＝180) Halogen free product for packing code suffix "H" Mechanical data 0 0.012(0.3) Typ. Io 0 0 25 50 75 100 0 125 AMBIENT TEMPERATURE:Ta(℃) retardant • Epoxy : UL94-V0 rated flame Derating Curveﾞ(Io-Ta) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 25 50 75 100 125 0.040(1.0) 0.024(0.6) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) .026(0.65) .021(0.55) .014(0.35) .009(0.25) SOD−723 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .043(1.10) .035(0.90) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 100 150 200 IO Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range IFSM RΘJA Typical Thermal Resistance (Note 2) Storage Temperature Range .007(0.18) .003(0.08) Maximum Average Forward Rectified Current .059(1.50) 60 80 .026(0.65) 1.0 .017(0.45) 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS .051(1.30) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 Maximum Average Reverse Current at @T A=25℃ 0.5 Rated DC Blocking Voltage 10 IR SOLDERING FOOTPRINT* @T A=125℃ 0.9 0.92 NOTES: 1.1 0.043 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.45 0.0177 2- Thermal Resistance From Junction to Ambient 0.50 0.0197 SCALE 10:1 2012-06 2012-11 mm Ǔ ǒinches WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.