WILLAS FM120-M+ THRU SCS520G FM1200-M+ 100mA Surface Mount Schottky Barrier Rectifiers-30V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-723SOD-123+ Package PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. zApplications • High surge capability. overvoltage protection. • Guardring Low current for rectification • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. zFeatures • Lead-free parts meet environmental standards of 1)MIL-STD-19500 Ultra Small mold/228 type. • RoHS product for packing code suffix "G" 2) Low IR. Halogen free product for packing code suffix "H" 3) High reliability. data Mechanical 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant for packing code suffix "G" Case :product Molded plastic, SOD-123H •RoHS Halogen free product for packing code suffix "H" , • Terminals :Plated terminals, solderable per MIL-STD-750 zConstruction Method 2026 epitaxial planar Silicon epit • Polarity : Indicated by cathode band SOD-723 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) • Mounting Position : Any •zDWeight 0.011 gram evice :M Approximated ark ing MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Device Marking Ratings at 25℃ ambient temperature unless otherwise specified. E SCS520G Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code VRRM Maximum Recurrent Peak Reverse Voltage Parameter 12 20 14 Maximum RMS Voltage VRMSSymbol VR Reverse voltage(DC) Maximum DC Blocking Voltage 20 VDC Io Average rectified forward current Maximum Average Forward Rectified Current IO IFSM Forward current surge peak （60Hz・1cyc） Tj Junction temperature Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Tstg Storage temperature superimposed on rated load (JEDEC method) zElectrical characteristics (Ta=25°C) Operating Temperature Range Param eter Storage Temperature Range Sym bol Forward voltage CHARACTERISTICS Revers e current VF Maximum Forward Voltage at 1.0A DC IR - 18 80 Unit 42 V 60 mA 1.0 mA ℃ 30 ℃ Limits 21 28 35 30 30 40 50 100 500 125 -40 to +125 10 100 Unit - 0.45 V V 56 70 105 140 80 100 150 200 V A A ℃ -55 to +150 Max. 120 200 V 40 120 Typ. 115 150 - 65 to +175 Conditions IF =10m A FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U SYMBOL µA 0.5 V =10V VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 16 60 -55 to +125 TJ Min. TSTG 15 50 CJ Typical Junction Capacitance (Note 1) 14 40 RΘJA Typical Thermal Resistance (Note 2) 13 30 @T A=125℃ IR 0.50 R 0.70 0.85 0.9 0.92 0.5 10 V m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. SCS520G 100mA Surface Mount Schottky Barrier Rectifiers-30V SOD-723 Package Electrical characteristic curves (Ta=25°C) 1000000 1 Ta=-25℃ Ta=25℃ 0.1 01 100000 Ta=75℃ 10000 1000 Ta=25℃ 100 Ta=-25℃ 10 1 001 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 350 340 330 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 800 19 700 600 500 400 300 AVE:100.5nA 200 Ta=25℃ f=1MHz VR=0V n=10pcs 18 17 16 15 14 13 12 100 11 0 10 VF DISPERSION MAP AVE:15.94pF Ct DISPERSION MAP IR DISPERSION MAP 10 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 20 1cyc Ifsm 15 8.3ms 10 AVE:3.90A 5 0 Ifsm 8.3ms 8.3ms 1cyc 5 Ifsm t 5 0 0 1 10 1 100 IFSM DISRESION MAP 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.1 1000 20 20 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 0.02 Rth(j-a) Rth(j-c) 100 Mounted on epoxy board IF=100mA IM=10mA 1m FORWARD POWER DISSIPATION:Pf(W) 0.08 DC REVERSE POWER DISSIPATION:PR (W) FORWARD VOLTAGE:VF(mV) 30 Ta=25℃ VR=10V n=30pcs 900 320 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 20 1000 Ta=25℃ IF=10mA n=30pcs AVE:338.8mV PEAK SURGE FORWARD CURRENT:IFSM(A) 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 370 360 10 1 0 6 PEAK SURGE FORWARD CURRENT:IFSM(A) 0 D=1/2 0.06 Sin(θ＝180) 0.04 0.02 time 0.015 0.01 DC 0.005 D=1/2 Sin(θ＝180) 300u 10 0.001 2012-11 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ 10 100 Ta=125℃ f=1MHｚ Ta=125℃ 100 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 1000 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SCS520G FM1200-M+ 100mA Surface Mount Schottky Barrier Rectifiers-30V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-723SOD-123+ Package PACKAGE Package outline Features process design, excellent power dissipation offers • Batch 0.3 0.3 better reverse leakage current and thermal resistance. SOD-123H 0A Io t AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) mounted application in order to • Low profile surface0A 0V VR optimize board space. D=t/T VR=15V • Low0.2power DC loss, high efficiency. T Tj=125℃ • High current capability, low forward voltage drop. D=1/2 capability. • High surge 0.1 • Guardring for overvoltage protection. Sin(θ＝180) switching. • Ultra high-speed • Silicon epitaxial planar chip, metal silicon junction. 0 parts meet environmental • Lead-free 0 25 50 75 100 125 standards of • Pb Free Product 0V 0.2 t 0.146(3.7) 0.130(3.3) DC Io T VR D=t/T VR=15V Tj=125℃ 0.012(0.3) Typ. D=1/2 0.1 0.071(1.8) 0.056(1.4) Sin(θ＝180) 0 0 MIL-STD-19500 /228 AMBIENT TEMPERATURE:Ta(℃) Curveﾞ(Io-Ta) RoHS productDerating for packing code suffix "G" Halogen free product for packing code suffix "H" 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant SOD−723 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 • Polarity : Indicated by cathode band .043(1.10) : Any • Mounting Position .035(0.90) • Weight : Approximated 0.011 gram 0.031(0.8) Typ. .014(0.35) .009(0.25) .026(0.65) .021(0.55) Method 2026 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .026(0.65) 15 .017(0.45) 16 .007(0.18) .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 50 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM .059(1.50) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) .051(1.30) RΘJA CJ Typical Junction Capacitance (Note 1) 1.0 30 40 120 -55 to +125 Storage Temperature Range A ℃ -55 to +150 TJ Dimensions in inches and (millimeters) Operating Temperature Range A - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR SOLDERING FOOTPRINT* 10 V m NOTES: 1.1 1- Measured at 1 MHZ and applied reverse voltage of 4.0 0.043 VDC. 0.45 0.0177 2- Thermal Resistance From Junction to Ambient 0.50 0.0197 SCALE 10:1 2012-06 2012-11 mm Ǔ ǒinches WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.