Transistors IC IC IC IC SMD SMD Type Type Product specification KRF7343 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit VDS 55 -55 V ID 4.7 -3.4 Continuous Drain Current ,VGS@10V , Ta = 70 ID 3.8 -2.7 Pulsed Drain Current *1 IDM 38 -27 Drain-Source Voltage Continuous Drain Current,VGS@10V , Ta = 25 Power Dissipation @Ta= 25 *5 Power Dissipation @Ta= 70 *5 2.0 PD 20 VGS Single Pulse Avalanche Energy *3 EAS 72 4.7 Avalanche Current IAR Repetitive Avalanche Energy EAR Peak Diode Recovery dv/dt *2 dv/dt Junction and Storage Temperature Range R V 114 -3.4 0.20 mJ A mJ 5.0 -5.0 V/ns -55 to + 150 TJ, TSTG Maximum Junction-to-Ambient *5 W 1.3 Gate-to-Source Voltage A 62.5 JA /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 4.7A, di/dt 220A/ s, VDD V(BR)DSS, TJ 150 -3.4A, di/dt -150A/ s, VDD V(BR)DSS, TJ 150 *3 N-Channel Starting TJ = 25 , L = 6.5mH RG = 25 , IAS = 4.7A. P-Channel Starting TJ = 25 , L = 20mH RG = 25 , IAS = -3.4A. *5 Surface mounted on FR-4 board, t *4 Pulse width 300 s; duty cycle http://www.twtysemi.com 10sec. 2%. [email protected] 4008-318-123 1 of 3 IC Transistors IC IC IC SMD SMD Type Type Product specification KRF7343 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Testconditons Symbol VGS = 0V, ID = 250 A N-Ch 55 P-Ch -55 V(BR)DSS/ ID = 1mA,Reference to 25 N-Ch 0.059 TJ ID = -1mA,Reference to 25 P-Ch 0.054 RDS(on) VGS = 4.5V, ID = 3.8A*1 VGS = -10V, ID = -3.4A*1 VGS = -4.5V, ID = -2.7A*1 Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current VGS(th) gfs IDSS IGSS Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain ("Miller") Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time Input Capacitance tr td(off) Output Capacitance Coss Reverse Transfer Capacitance Crss http://www.twtysemi.com P-Ch V/ 0.043 0.050 0.056 0.065 0.095 0.105 0.150 0.170 VDS = VGS, ID = -250 A P-Ch VDS = 10V, ID = 4.5A*1 N-Ch VDS = -10V, ID = -3.5A*1 P-Ch VDS = 55V, VGS = 0V N-Ch 2.0 VDS = -55V, VGS = 0V P-Ch -2.0 VDS = 55V, VGS = 0V, TJ = 55 N-Ch 25 P-Ch -25 VGS = 20V V S N-Ch 100 P-Ch 100 N-Channel N-Ch 24 36 ID =4.5A,VDS = 44V,VGS =10V P-Ch 26 38 N-Ch 2.3 3.4 P-Channel P-Ch 3.0 4.5 ID = -3.1A,VDS = -44V,VGS = -10V N-Ch 7.0 10 P-Ch 8.4 13 N-Ch 8.3 12 N-Channel VDD = 28V,ID = 1.0A,RG = 6.0 P-Ch 14 22 RD=16 N-Ch 3.2 4.8 P-Channel P-Ch 10 15 VDD = -28V,ID = -1.0A,RG = 6.0 N-Ch 32 48 64 RD=16 N-Channel VGS = 0V,VDS = 25V,f = 1.0MHz P-Ch 43 N-Ch 13 20 P-Ch 22 32 N-Ch 740 P-Ch 690 N-Ch 190 P-Channel P-Ch 210 VGS = 0V,VDS = -25V,f = 1.0MHz N-Ch 71 P-Ch 86 [email protected] Unit V N-Ch tf Ciss N-Ch Max VDS = VGS, ID = 250 A VDS = -55V, VGS = 0V, TJ = 55 Gate-to-Source Forward Leakage Typ VGS = 0V, ID = -250 A V(BR)DSS VGS = 10V, ID = 4.7A*1 Static Drain-to-Source On-Resistance Min 4008-318-123 A nA nC ns pF 2 of 3 IC Transistors IC IC IC SMD SMD Type Type Product specification KRF7343 Electrical Characteristics Ta = 25 Parameter Continuous Source Current Pulsed Source Current ISM Body Diode) *2 VSD Reverse Recovery Time trr Reverse RecoveryCharge Qrr 300 s; duty cycle Min IS Body Diode) Diode Forward Voltage *1 Pulse width Testconditons Symbol Typ Max N-Ch 2.0 P-Ch -2.0 N-Ch 38 P-Ch N-Ch 0.70 1.2 TJ = 25 , IS = -2.0A, VGS = 0V*1 P-Ch 0.80 -1.2 TJ = 25 , IF =2.0A,di/dt = 100A/ s*1 P-Channel TJ=25 ,IF=-2.0A,di/dt=-100A/ s*1 A -27 TJ = 25 , IS = 2.0A, VGS = 0V*1 N-Channel Unit N-Ch 60 90 P-Ch 54 80 N-Ch 120 170 P-Ch 85 130 V ns nC 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3