ONSEMI NVD5414NT4G

NTD5414N, NVD5414N
Power MOSFET
24 Amps, 60 Volts Single N−Channel
DPAK
Features
•
•
•
•
•
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Low RDS(on)
High Current Capability
Avalanche Energy Specified
AEC Q101 Qualified − NVD5414N
These Devices are Pb−Free and are RoHS Compliant
V(BR)DSS
60 V
24 A
37 mW @ 10 V
Applications
•
•
•
•
ID MAX
(Note 1)
RDS(ON) MAX
N−Channel
LED Lighting and LED Backlight Drivers
DC−DC Converters
DC Motor Drivers
Power Supplies Secondary Side Synchronous Rectification
D
G
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
Gate−to−Source Voltage − Nonrepetitive
(TP < 10 ms)
VGS
$30
V
MARKING
DIAGRAMS
ID
24
A
4
Drain
Steady
State
Power Dissipation
RqJC (Note 1)
Steady
State
TC = 25°C
TC = 100°C
4
PD
55
W
IDM
75
A
TJ, Tstg
−55 to
+175
°C
IS
24
A
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 V, IL(pk) = 24 A,
L = 0.3 mH, RG = 25 W)
EAS
86.4
mJ
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
TL
260
°C
Pulsed Drain Current
TC = 25°C
16
tp = 10 ms
Operating and Storage Temperature Range
Source Current (Body Diode)
1 2
Junction−to−Case (Drain) Steady State
(Note 1)
2
1
3
Drain
Gate
Source
5414N
Y
WW
G
= Device Code
= Year
= Work Week
= Pb−Free Device
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
THERMAL RESISTANCE RATINGS
Parameter
3
DPAK
CASE 369AA
STYLE 2
YWW
5414N
Continuous Drain
Current RqJC
(Note 1)
S
Symbol
Max
Unit
RqJC
2.7
°C/W
RqJA
58.6
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 1
1
Publication Order Number:
NTD5414N/D
NTD5414N, NVD5414N
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
V(BR)DSS
VDS = 0 V, ID = 250 mA
60
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
V(BR)DSS/TJ
IDSS
V
67.3
VGS = 0 V
VDS = 60 V
mV/°C
TJ = 25°C
1.0
TJ = 150°C
50
IGSS
VDS = 0 V, VGS = $20 V
VGS(th)
VGS = VDS, ID = 250 mA
$100
mA
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
VGS(th)/TJ
2.0
3.2
Drain−to−Source On−Voltage
VDS(on)
VGS = 10 V, ID = 12 A, 150°C
0.7
Drain−to−Source On−Resistance
RDS(on)
VGS = 10 V, ID = 24 A
28.4
gFS
VDS = 15 V, ID = 20 A
24
Input Capacitance
Ciss
800
Output Capacitance
Coss
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Forward Transconductance
4.0
0.74
VGS = 10 V, ID = 24 A
0.7
V
mV/°C
1.16
V
37
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Transfer Capacitance
Crss
1200
pF
48
nC
165
75
VGS = 10 V, VDS = 48 V,
ID = 24 A
Total Gate Charge
QG(TOT)
25
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
4.8
Gate−to−Drain Charge
QGD
11.3
1.1
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
Rise Time
td(on)
tr
Turn−Off Delay Time
Fall Time
VGS = 10 V, VDD = 48 V,
ID = 24 A, RG = 9.1 W
ns
12
58
td(off)
47
tf
69
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage (Note 2)
VSD
VGS = 0 V
IS = 24 A
TJ = 25°C
0.92
TJ = 125°C
0.8
IS = 24 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms
Reverse Recovery Time
trr
Charge Time
ta
Discharge Time
tb
14
QRR
76
Reverse Recovery Stored Charge
1.15
45.7
V
ns
31.7
nC
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Package
Shipping†
NTD5414NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NVD5414NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
NTD5414N, NVD5414N
TYPICAL PERFORMANCE CURVES
10 V
7V
5.5 V
30
25
20
5V
15
4.8 V
10
4.5 V
5
2
3
4
20
TJ = 125°C
15
10
TJ = 25°C
TJ = −55°C
2
3
4
5
6
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.08
ID = 24 A
TJ = 25°C
0.07
0.06
0.05
0.04
0.03
0.02
25
0
5
5
6
7
8
9
10
0.040
TJ = 25°C
VGS = 10 V
0.030
0.020
0.010
10
15
25
20
35
30
40
45
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1000
2.5
VGS = 0 V
ID = 24 A
VGS = 10 V
TJ = 150°C
2.0
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1
30
5
VGS = 4.2 V
0
0
VDS ≥ 10 V
35
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
35
40
TJ = 25°C
6V
ID, DRAIN CURRENT (A)
40
1.5
1.0
0.5
−50
−25
0
25
50
75
100
125
150
175
100
TJ = 125°C
10
5
10
15
20
25
30
35
40
45
50
55 60
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
NTD5414N, NVD5414N
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
1500
1000
Ciss
500
0
Coss
Crss
0
10
20
30
40
50
60
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL PERFORMANCE CURVES
10
QT
8
Q1
6
Q2
4
2
0
ID = 24 A
TJ = 25°C
0
5
Figure 7. Capacitance Variation
IS, SOURCE CURRENT (A)
t, TIME (ns)
100
tf
td(off)
tr
td(on)
10
1
10
20
15
10
5
0
0.4
100
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
90
0 V ≤ VGS ≤ 10 V
Single Pulse
TC = 25°C
1 ms
100 ms
10 ms
10 ms
dc
10
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
ID = 24 A
80
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
25
VGS = 0 V
TJ = 25°C
RG, GATE RESISTANCE (W)
0.1
20
25
VDD = 48 V
ID = 24 A
VGS = 10 V
100
15
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
1
10
Qg, TOTAL GATE CHARGE (nC)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1
10
70
60
50
40
30
20
10
0
25
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
175
NTD5414N, NVD5414N
TYPICAL PERFORMANCE CURVES
100
D = 0.5
10
r(t), (°C/W)
1
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
Surface−Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 13. Thermal Response
http://onsemi.com
5
1
10
100
1000
NTD5414N, NVD5414N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE B
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTD5414N/D