NTB5860N, NTP5860N, NVB5860N N-Channel Power MOSFET 60 V, 220 A, 3.0 mW Features • • • • • http://onsemi.com Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX 60 V 3.0 mW @ 10 V 220 A D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol G Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS $20 V ID 220 A Continuous Drain Current, RqJC Steady State Power Dissipation, RqJC Steady State TC = 25°C TC = 100°C 283 W IDM 660 A Current Limited by Package IDMmax 130 A Operating and Storage Temperature Range TJ, Tstg −55 to +175 °C IS 130 A Single Pulse Drain−to−Source Avalanche Energy (L = 0.3 mH) EAS 735 mJ Lead Temperature for Soldering Purposes (1/8″ from Case for 10 Seconds) TL 260 °C Symbol Max Unit Junction−to−Case (Drain) Steady State RqJC 0.53 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 28 tp = 10 ms Source Current (Body Diode) 4 156 PD Pulsed Drain Current TC = 25°C S N−CHANNEL MOSFET 4 1 3 1 2 D2PAK CASE 418B STYLE 2 TO−220AB CASE 221A STYLE 5 3 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain THERMAL RESISTANCE RATINGS Parameter Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). 2 NTB 5860NG AYWW NTP 5860NG AYWW 1 Gate 3 Source 1 Gate 2 Drain 3 Source 2 Drain G = Pb−Free Device A = Assembly Location* Y = Year WW = Work Week *Could be one or two digit alpha or numeric code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2012 September, 2012 − Rev. 2 1 Publication Order Number: NTB5860N/D NTB5860N, NTP5860N, NVB5860N ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified) Characteristics Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−Source Leakage Current IDSS 5.0 ID = 250 mA VGS = 0 V VDS = 60 V V mV/°C TJ = 25°C 1.0 TJ = 125°C 100 IGSS VDS = 0 V, VGS = $20 V VGS(th) VGS = VDS, ID = 250 mA $100 mA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On−Resistance VGS(th)/TJ 2.0 4.0 −10.1 V mV/°C RDS(on) VGS = 10 V, ID = 75 A 2.5 gFS VDS = 15 V, ID = 30 A 38 S 10760 pF Forward Transconductance 3.0 mW CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Transfer Capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz Coss 1125 Crss 700 Total Gate Charge QG(TOT) 180 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 10 V, VDS = 48 V, ID = 65 A nC 11 45 57 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) 27 tr 117 td(off) VGS = 10 V, VDD = 48 V, ID = 65 A, RG = 2.5 W tf ns 66 150 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time trr Charge Time ta Discharge Time tb Reverse Recovery Stored Charge VGS = 0 V IS = 20 A TJ = 25°C 0.76 TJ = 125°C 0.63 55 VGS = 0 V, IS = 65 A, dIS/dt = 100 A/ms QRR http://onsemi.com 2 Vdc ns 29 26 76 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. 1.1 nC NTB5860N, NTP5860N, NVB5860N TYPICAL CHARACTERISTICS VGS = 10 V 300 VGS = 6 V 350 TJ = 25°C 5.5 V 250 200 150 5.0 V 100 200 150 TJ = 25°C 100 0 1 2 3 4 0 5 TJ = 125°C 2 4 5 6 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.0035 ID = 20 A TJ = 25°C 0.006 TJ = 25°C 0.0030 0.004 VGS = 10 V 0.0025 0.002 0.0020 4 6 8 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.0020 10 30 50 70 90 110 130 150 170 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current 100000 2.0 VGS = 0 V ID = 20 A 1.8 V = 10 V GS 1.6 TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 3 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 4.5 V 0.008 0.000 250 50 50 0 VDS ≥ 10 V 300 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 350 1.4 10000 1.2 1.0 TJ = 125°C 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 1000 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 60 NTB5860N, NTP5860N, NVB5860N 14000 C, CAPACITANCE (pF) VGS = 0 V TJ = 25°C Ciss 12000 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 10000 8000 6000 4000 Coss 2000 0 0 Crss 10 20 30 40 10 QT 8 6 Qgs Qgd 4 2 VDS = 48 V ID = 65 A TJ = 25°C 0 0 20 40 60 80 100 120 140 Qg, TOTAL GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge 1000 180 VDD = 48 V ID = 65 A VGS = 10 V IS, SOURCE CURRENT (A) tf tr 100 VGS = 0 V TJ = 25°C 160 td(off) td(on) 140 120 100 80 60 40 20 10 1 10 100 0 0.60 0.70 0.80 0.90 1.00 1.10 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) t, TIME (ns) 160 180 1 ms 10 ms dc 100 ms 10 ms 100 10 1 0.1 VGS = 10 V SINGLE PULSE TC = 25°C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NTB5860N, NTP5860N, NVB5860N TYPICAL CHARACTERISTICS RqJC(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 Duty Cycle = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (s) Figure 12. Thermal Response ORDERING INFORMATION Package Shipping† NTP5860NG TO−220AB (Pb−Free) 50 Units / Rail NTB5860NT4G D2PAK (Pb−Free) 800 / Tape & Reel NVB5860NT4G* D2PAK (Pb−Free) 800 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. http://onsemi.com 5 NTB5860N, NTP5860N, NVB5860N PACKAGE DIMENSIONS D2PAK CASE 418B−04 ISSUE J C E −B− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. V W 4 1 2 A S 3 −T− SEATING PLANE K J G D M T B M N R P L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 17.02 0.67 5.08 0.20 3.05 0.12 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN U L M W H 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE DIM A B C D E F G H J K L M N P R S V MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 NTB5860N, NTP5860N, NVB5860N PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 5: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 GATE DRAIN SOURCE DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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