SHENZHENFREESCALE AON7452

AON7452
100V N-Channel MOSFET
General Description
The AON7452 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate
charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal
technology is well suited for PWM, load switching and general purpose applications.
Features
VDS
100V
ID (at VGS=10V)
5.5A
RDS(ON) (at VGS=10V)
< 310mΩ
RDS(ON) (at VGS=7V)
< 370mΩ
D
Top View
1
8
2
7
3
6
4
5
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
TA=25°C
V
A
12
2.5
IDSM
A
2
Avalanche Current C
IAS, IAR
2.5
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
0.3
mJ
Power Dissipation B
Junction and Storage Temperature Range
3.1
Steady-State
Steady-State
RθJA
RθJC
W
2
TJ, TSTG
Symbol
t ≤ 10s
W
7
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
17
PD
TC=100°C
TA=25°C
Power Dissipation A
1/7
±25
3.5
IDM
TA=70°C
Units
V
5.5
ID
TC=100°C
Maximum
100
-55 to 150
Typ
30
60
6
°C
Max
40
75
7.2
Units
°C/W
°C/W
°C/W
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AON7452
100V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
Typ
10
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
3.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
12
TJ=55°C
50
VDS=0V, VGS= ±25V
VGS=10V, ID=2.5A
nA
4
4.7
V
255
310
404
485
370
mΩ
1
V
15
A
185
pF
A
Static Drain-Source On-Resistance
VGS=7V, ID=2A
296
gFS
Forward Transconductance
VDS=5V, ID=2.5A
3.5
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.8
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=50V, ID=2.5A
µA
100
RDS(ON)
TJ=125°C
Units
V
VDS=100V, VGS=0V
IDSS
Crss
Max
mΩ
S
125
155
20
28
36
pF
5
9
13
pF
1
2
3
Ω
2.4
3
4
nC
1
1.3
1.6
nC
0.5
0.9
1.3
nC
VGS=10V, VDS=50V, RL=20Ω,
RGEN=3Ω
4
ns
4.5
ns
8.5
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=2.5A, dI/dt=500A/µs
6.7
9.6
13
Qrr
Body Diode Reverse Recovery Charge IF=2.5A, dI/dt=500A/µs
16
23
30
2
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/7
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AON7452
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
10
10V
VDS=5V
4
8
7V
3
ID(A)
ID (A)
6
6.5V
2
4
6V
125°C
1
2
25°C
VGS=5.5V
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2
5
5
6
7
8
2
Normalized On-Resistance
600
RDS(ON) (mΩ )
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
800
VGS=7V
400
200
VGS=10V
0
VGS=10V
ID=2.5A
1.8
1.6
17
5
VGS=7V
2
ID=2A
10
1.4
1.2
1
0.8
0
1
2
3
4
5
6
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
550
1.0E+01
ID=2.5A
500
1.0E+00
40
450
1.0E-01
400
125°C
350
300
IS (A)
RDS(ON) (mΩ )
3
125°C
25°C
1.0E-02
1.0E-03
250
1.0E-04
200
25°C
1.0E-05
150
5
3/7
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7452
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250
10
VDS=50V
ID=2.5A
200
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
100
Coss
50
0
Crss
0
0
0.5
1
1.5
2
2.5
3
Qg (nC)
Figure 7: Gate-Charge Characteristics
3.5
0
10
20
30
40
50
VDS (Volts)
Figure 8: Capacitance Characteristics
60
200
100.0
10µs
10µs
RDS(ON)
limited
100µs
1.0
DC
TJ(Max)=150°C
TC=25°C
160
Power (W)
10.0
ID (Amps)
150
1ms
10ms
17
5
2
10
120
80
0.1
40
TJ(Max)=150°C
TC=25°C
0.0
0.01
0.1
1
10
VDS (Volts)
100
1000
0
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=7.2°C/W
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/7
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AON7452
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
6
Power Dissipation (W)
5
Current rating ID(A)
15
10
5
4
3
2
1
0
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note F)
150
10000
TA=25°C
Power (W)
1000
17
5
2
10
100
10
1
0.00001
0.001
0.1
0
18
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
1000
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
5/7
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AON7452
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
14
di/dt=500A/µs
40
125ºC
12
25ºC
10
16
Qrr
20
6
15
25ºC
10
2
trr (ns)
8
0
4
6
125ºC
0
8
0
2
IS (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
50
4
25
8
15
2.5
Is=4A
trr
125ºC
20
125ºC
20
10
1.5
S
trr (ns)
15
25ºC
Irm (A)
Qrr (nC)
Qrr
2
25ºC
10
30
0
6
IS (A)
Figure 17: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
Is=4A
40
0.5
25ºC
S
0
2
1.5
4
2
125ºC
0
trr
8
1
4
Irm
5
25ºC
12
Irm (A)
Qrr (nC)
25
125ºC
2.5
35
30
3
di/dt=500A/µs
S
45
1
5
10
5
25ºC
Irm
0
0
300
400
500
600
700
di/dt (A/µ
µs)
Figure 18: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
6/7
25ºC
125ºC
0.5
S
125º
0
300
0
400
500
600
700
di/dt (A/µ
µs)
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
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AON7452
100V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
7/7
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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