DINTEK DTS1004

DTS1004
www.din-tek.jp
N-Channel 100 V (D-S) MOSFET
FEATURES
MOSFET PRODUCT SUMMARY
RDS(on) ()
ID (A)a
0.234 at VGS = 10 V
2.3
0.267 at VGS = 6 V
2.1
0.278 at VGS = 4.5 V
1.7
VDS (V)
100
Qg (Typ.)
2.9 nC
•
•
•
•
TrenchFET® Power MOSFET
100 % Rg Tested
100 % UIS Tested
Material categorization:
APPLICATIONS
• DC/DC Converters
• Load Switch
• LED Backlighting in LCD TVs
G
1
3
S
D
2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
100
± 20
2.3
1.8
1.6b, c
1.3b, c
5
2.1
1.0b, c
5
1.25
2.5
1.6
1.25b, c
0.8b, c
- 55 to 150
ID
IDM
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
5 s
Maximum Junction-to-Ambientb, d
Steady State
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
Symbol
RthJA
RthJF
Typical
75
40
Maximum
100
50
Unit
°C/W
1
DTS1004
www.din-tek.jp
MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VDS = 0 V, ID = 250 µA
100
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State
Resistancea
Forward Transconductancea
RDS(on)
gfs
105
ID = 250 µA
Gate-Source Leakage
V
mV/°C
- 5.2
1.2
2.8
V
± 100
nA
VDS = 100 V, VGS = 0 V
-1
VDS = 100 V, VGS = 0 V, TJ = 55 °C
- 10
VDS 5 V, VGS = 4.5 V
5
µA
A
VGS = 10 V, ID = 1.5 A
0.195
0.234
VGS = 6 V, ID = 1 A
0.222
0.267
VGS = 4.5 V, ID = 0.5 A
0.231
0.278
VDS = 20 V, ID = 1.5 A
2.0

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
190
VDS = 50 V, VGS = 0 V, f = 1 MHz
22
VDS = 50 V, VGS = 10 V, ID = 1.6 A
5.2
10.4
2.9
5.8
pF
13
VDS = 50 V, VGS = 4.5 V, ID = 1.6 A
0.75
1.4
f = 1 MHz
td(on)
0.3
1.4
2.8
30
45
26
39
17
26
tf
12
20
td(on)
6
12
10
20
tr
td(off)
tr
td(off)
nC
VDD = 50 V, RL = 39 
ID = 1.3 A, VGEN = 4.5 V, Rg = 1 
VDD = 50 V, RL = 39 
ID = 1.3 A, VGEN = 10 V, Rg = 1 
tf
10
20
6
12

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
TC = 25 °C
- 2.1
- 20
IS = 1.3 A
- 0.8
- 1.2
A
V
Body Diode Reverse Recovery Time
trr
22
33
ns
Body Diode Reverse Recovery Charge
Qrr
21
32
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C
16
6
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTS1004
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
3
VGS = 10 V thru 5 V
VGS = 4 V
2.4
ID - Drain Current (A)
ID - Drain Current (A)
4
3
2
VGS = 3 V
1
1.8
TC = 25 °C
1.2
0.6
TC = 125 °C
TC = - 55 °C
0
0
0
0.5
1
1.5
2
0
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
300
0.26
240
C - Capacitance (pF)
VGS = 4.5 V
0.24
VGS = 6 V
0.22
0.20
VGS = 10 V
Ciss
180
120
60
0.18
Coss
Crss
0
0.16
0
1
2
3
4
5
0
20
40
60
80
100
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
10
2.2
ID = 1.6 A
ID = 1.5 A
8
VDS = 25 V
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
2
VDS - Drain-to-Source Voltage (V)
0.28
RDS(on) - On-Resistance (Ω)
1
6
VDS = 50 V
4
VDS = 80 V
1.75
VGS = 6 V
1.3
0.85
2
VGS = 10 V
0
0.4
0
1.5
3
4.5
Qg - Total Gate Charge (nC)
Gate Charge
6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
DTS1004
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.6
0.45
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 1.5 A
TJ = 150 °C
1
TJ = 125 °C
0.3
T = 25 °C
0.15
TJ = 25 °C
0.1
0.0
0
0.3
0.6
0.9
2
1.2
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.8
10
8
Power (W)
2.5
VGS(th) (V)
4
ID = 250 μA
2.2
6
4
1.9
2
1.6
- 50
- 25
0
25
50
75
100
125
TA = 25 °C
0
0.01
150
0.1
1
Single Pulse Power
Threshold Voltage
10
Limited by R DS(on)*
100 μs
ID - Drain Current (A)
1
1 ms
10 ms
0.1
100 ms
1 s, 10 s
0.01
DC
TA = 25 °C
Single Pulse
0.001
0.1
1
BVDSS Limited
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
4
10
Time (s)
TJ - Temperature (°C)
100
1000
DTS1004
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.8
ID - Drain Current (A)
2.1
1.4
0.7
0.0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
3
1.0
2.4
0.8
1.8
0.6
Power (W)
Power (W)
Current Derating*
1.2
0.6
0.4
0.2
0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
DTS1004
www.din-tek.jp
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C )
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
.
6
Package Information
www.din-tek.jp
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
INCHES
Min
Max
Min
Max
A
0.89
1.12
0.035
0.044
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.95 BSC
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
1
Application Note
www.din-tek.jp
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
1
Legal Disclaimer Notice
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
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1