Product specification 2SA1434 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Adoption of FBET process. 0.4 3 (VCE(sat) 0.5V). 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 15V). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High VEBO (VEBO 0.55 Low collector-to-emitter saturation voltage +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain (hFE=500 to 1200). 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -15 V Collector current IC -100 mA Collector current (pulse) Icp -200 mA Collector dissipation PC 200 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = -40V, IE=0 -0.1 ìA Emitter cutoff current IEBO VEB = -10V, IC=0 -0.1 ìA DC current gain hFE VCE = -5V , IC = -10mA fT VCE = -10V , IC = -10mA 100 MHz Cob VCB = -10V , f = 1.0MHz 4.8 pF Gain bandwidth product Output capacitance Testconditons Min 500 Typ 800 1200 Collector-emitter saturation voltage VCE(sat) IC = -50mA , IB = -1mA -0.2 -0.5 V Base-emitter saturation voltage VBE(sat) IC = -10ìA , IB = -1mA -0.8 -1.1 V Collector-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -50 V Emitter-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -15 V Marking Marking FL 1 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1