WHXPCB AO4576

万和兴电子有限公司 www.whxpcb.com
AO4576
30V N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
VDS
30V
20A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 5.8mΩ
RDS(ON) (at VGS = 4.5V)
< 9.8mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
Continuous Drain
Current
TA=25°C
Units
V
±20
V
20
ID
TA=100°C
Maximum
30
12
A
Pulsed Drain Current C
IDM
144
Avalanche Current C
IAS
25
A
Avalanche energy L=0.1mH C
EAS
31
mJ
VDS Spike
VSPIKE
36
V
Power Dissipation B
100ns
TA=25°C
PD
TA=100°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev1: Nov. 2012
3.1
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.2
RθJA
RθJL
-55 to 150
Typ
31
59
16
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°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4576
万和兴电子有限公司 www.whxpcb.com
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
1.8
100
nA
2.2
V
4.7
5.8
6.2
7.6
7.7
9.8
mΩ
1
V
4
A
91
0.7
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
0.7
mΩ
S
1037
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
µA
5
1.4
Units
V
1
TJ=55°C
IGSS
Max
30
VDS=30V, VGS=0V
VGS(th)
Coss
Typ
pF
441
pF
61
pF
1.5
2.3
Ω
15.5
22.5
nC
6.8
10.5
nC
3.0
nC
Gate Drain Charge
3.6
nC
Turn-On DelayTime
5.5
ns
3.3
ns
18
ns
4.3
ns
IF=20A, dI/dt=500A/µs
12.7
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
17.2
ns
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: Nov. 2012
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Page 2 of 5
AO4576
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
4.5V
80
VDS=5V
80
5V
7V
4V
60
ID(A)
ID (A)
60
40
40
125°C
VGS=3V
20
25°C
20
0
0
0
1
2
3
4
0
5
10
Normalized On-Resistance
VGS=4.5V
6
4
VGS=10V
2
0
3
4
5
6
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
5
10
15
20
25
30
0
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
14
1.0E+02
ID=20A
12
1.0E+01
10
1.0E+00
125°C
8
IS (A)
RDS(ON) (mΩ
Ω)
2
1.6
8
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
125°C
1.0E-01
1.0E-02
4
25°C
1.0E-03
25°C
2
1.0E-04
0
2
4
6
8
10
1.0E-05
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev1: Nov. 2012
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO4576
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1400
Capacitance (pF)
VGS (Volts)
1200
VDS=15V
ID=20A
8
6
4
Ciss
1000
800
600
Coss
400
2
200
0
Crss
0
0
5
10
15
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
10000
RDS(ON)
10µs
100µs
10.0
1.0
1ms
DC
10ms
0.1
0.1
100
10
TJ(Max)=150°C
TC=25°C
0.0
0.01
TA=25°C
TJ(Max)=150°C
TC=25°C
1000
Power (W)
10µs
100.0
ID (Amps)
5
1
10
100
1
0.00001
0.001
0.1
10
1000
VDS (Volts)
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note F)
Rev1: Nov. 2012
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Page 4 of 5
AO4576
万和兴电子有限公司 www.whxpcb.com
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev1: Nov. 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5