A Product Line of Diodes Incorporated ZXTC6718MC COMPLEMENTARY 20V LOW SATURATION TRANSISTORS Features Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage (150mV max @ 1A) • RSAT = 47mΩ for a low equivalent On-Resistance PNP Transistor • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 64mΩ for a low equivalent On-Resistance • hFE characterized up to 6A for high current gain hold up • Low profile 0.8mm high package for thin applications • RθJA efficient, 40% lower than SOT26 2 • 6mm footprint, 50% smaller than TSOP6 and SOT26 • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP capable (Note 4) • • • • • • • Case: W-DFN3020-8 Type B Nominal package height: 0.8mm Case material: molded plastic. “Green” molding compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - NiPdAu, Solderable per MIL-STD-202, Method 208 e4 Weight: 0.013 grams (approximate) Applications • • • • • • DC – DC Converters Charging circuits Power switches Motor control LED Backlighting circuits Portable applications C1 C2 W-DFN3020-8 Type B C2 B1 B2 E2 Bottom View C1 C1 C1 C2 E1 Top View C2 B2 E1 E2 NPN Transistor B1 Pin 1 PNP Transistor Bottom View Pin-Out Equivalent Circuit Ordering Information (Note 4 & 5) Product ZXTC6718MCTA ZXTC6718MCQTA Notes: Compliance AEC-Q101 Automotive Marking DB2 DB2 Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3,000 3,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. 5. For packaging details, go to our website at http://www.diodes.com Marking Information DB2 ZXTC6718MC Document number: DS31927 Rev. 4 - 2 DB2 = Product type marking code Top view, dot denotes pin 1 1 of 9 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC6718MC Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Continuous Collector Current Base Current Symbol VCBO VCEO VEBO ICM (Notes 6 & 9) (Notes 7 & 9) IC NPN 40 20 7 12 4.5 5 PNP -25 -20 -7 -6 -3.5 -3.8 1 IB Unit V V V A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol (Notes 6 & 9) Power Dissipation Linear Derating Factor (Notes 7 & 9) PD (Notes 8 & 9) (Notes 8 & 10) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: (Notes 6 & 9) (Notes 7 & 9) (Notes 8 & 9) (Notes 8 & 10) (Notes 9 & 11) RθJA RθJL TJ, TSTG NPN PNP 1.5 12 2.45 19.6 1.13 8 1.7 13.6 83.3 51.0 111 73.5 17.1 -55 to +150 Unit W mW/°C °C/W °C 2 6. For a dual device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half. 7. Same as note (6), except the device is measured at t <5 sec. 8. Same as note (6), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper. 9. For a dual device with one active die. 10. For dual device with 2 active die running at equal power. 11. Thermal resistance from junction to solder-point (on the exposed collector pads). ZXTC6718MC Document number: DS31927 Rev. 4 - 2 2 of 9 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC6718MC Thermal Characteristics and Derating Information -IC Collector Current (A) IC Collector Current (A) 10 10 VCE(SAT) Limited DC 1 1s 100ms 10ms 1ms 0.1 8sqcm 2oz Cu One active die Single Pulse, Tamb=25°C 0.01 0.1 100us 1 VCE(SAT) Limited DC 1 1s 100ms 10ms 0.1 100us 8sqcm 2oz Cu One active die Single Pulse, Tamb=25°C 0.01 0.1 10 1ms 1 10 -VCE Collector-Emitter Voltage (V) VCE Collector-Emitter Voltage (V) NPN Safe Operating Area PNP Safe Operating Area 8sqcm 2oz Cu One active die 60 D=0.5 40 20 Single Pulse D=0.2 D=0.05 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k Max Power Dissipation (W) Thermal Resistance (°C/W) 2.0 80 10sqcm 1oz Cu Two active die 1.5 8sqcm 2oz Cu One active die 10sqcm 1oz Cu One active die 1.0 0.5 0.0 0 Transient Thermal Impedance 100 125 150 225 2oz Cu Two active die Tamb=25°C Tj max=150°C Thermal Resistance (°C/W) PD Dissipation (W) 75 Derating Curve 3.5 2.5 50 Temperature (°C) Pulse Width (s) 3.0 25 Continuous 2.0 2oz Cu One active die 1.5 1.0 1oz Cu One active die 0.5 0.0 100m 1 1oz Cu Two active die 10 200 125 100 75 50 2oz Cu Once active die 2oz Cu Two active die 25 0 0.1 100 1 10 100 Board Cu Area (sqcm) Power Dissipation v Board Area Document number: DS31927 Rev. 4 - 2 1oz Cu Two active die 150 Board Cu Area (sqcm) ZXTC6718MC 1oz Cu One active die 175 Thermal Resistance v Board Area 3 of 9 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC6718MC NPN - Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 12) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES Min 40 20 7 - Typ 100 27 8.2 - Max 100 100 100 Unit V V V nA nA nA Static Forward Current Transfer Ratio (Note 12) hFE 200 300 200 100 400 450 360 180 - - 15 150 135 250 300 mV Collector-Emitter Saturation Voltage (Note 12) VCE(sat) - 8 90 115 190 210 Base-Emitter Turn-On Voltage (Note 12) Base-Emitter Saturation Voltage (Note 12) Output Capacitance VBE(on) VBE(sat) Cobo - 0.88 0.98 23 0.97 1.07 30 V V pF Transition Frequency fT 100 140 - MHz Turn-on Time Turn-off Time ton toff - 170 400 - ns ns Notes: Test Condition IC = 100µA IC = 10mA IE = 100µA VCB = 30V VEB = 6V VCE = 16V IC = 10mA, VCE = 2V IC = 200mA, VCE = 2V IC = 2A, VCE = 2V IC = 6A, VCE = 2V IC = 0.1A, IB = 10mA IC = 1A, IB = 10mA IC = 2A, IB = 50mA IC = 3A, IB = 100mA IC = 4.5A, IB = 125mA IC = 4.5A, VCE = 2V IC = 4.5A, IB = 125mA VCB = 10V, f = 1MHz VCE = 10V, IC = 50mA, f = 100MHz VCC = 10V, IC = 3A IB1 = IB2 = 10mA 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. ZXTC6718MC Document number: DS31927 Rev. 4 - 2 4 of 9 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC6718MC NPN - Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 0.25 IC/IB=50 Tamb=25°C 0.20 100°C VCE(SAT) (V) VCE(SAT) (V) 100m IC/IB=100 10m IC/IB=50 IC/IB=10 1m 1m 10m 100m 1 0.15 25°C 0.10 -55°C 0.05 0.00 1m 10 IC Collector Current (A) 10m 100m 1 10 IC Collector Current (A) VCE(SAT) v IC VCE(SAT) v IC 630 1.0 100°C 0.8 450 360 25°C 0.6 270 -55°C 0.4 180 0.2 0.0 1m 90 10m 100m 1 10 1.0 540 0 VBE(SAT) (V) Normalised Gain 1.2 Typical Gain (hFE) VCE=2V 0.8 -55°C 100°C 0.4 1m 10m 100m 1 10 IC Collector Current (A) hFE v IC VBE(ON) (V) 25°C 0.6 IC Collector Current (A) 1.0 IC/IB=50 VBE(SAT) v IC VCE=2V 0.8 -55°C 0.6 25°C 100°C 0.4 1m 10m 100m 1 10 IC Collector Current (A) VBE(ON) v IC ZXTC6718MC Document number: DS31927 Rev. 4 - 2 5 of 9 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC6718MC PNP - Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 12) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES Min -25 -20 -7 - Typ -35 -25 -8.5 - Max -100 -100 -100 Unit V V V nA nA nA Static Forward Current Transfer Ratio (Note 12) hFE 300 300 150 15 475 450 230 30 - - Collector-Emitter Saturation Voltage (Note 12) VCE(sat) - -19 -170 -190 -240 -225 -30 -220 -250 -350 -300 mV Base-Emitter Turn-On Voltage (Note 12) Base-Emitter Saturation Voltage (Note 12) Output Capacitance VBE(on) VBE(sat) Cobo - -0.87 -1.01 21 -0.95 -1.12 30 V V pF fT 150 180 - MHz ton toff - 40 670 - ns ns Transition Frequency Turn-on Time Turn-off Time Notes: Test Condition IC = -100µA IC = -10mA IE = -100µA VCB = -20V VEB = -6V VCES = -16V IC = -10mA, VCE = -2V IC = -100mA, VCE = -2V IC = -2A, VCE = -2V IC = -6A, VCE = -2V IC = -0.1A, IB = -10mA IC = -1A, IB = -20mA IC = -1.5A, IB = -50mA IC = -2.5A, IB = -150mA IC = -3.5A, IB = -350mA IC = -3.5A, VCE = -2V IC = -3.5A, IB = -350mA VCB = -10V. f = 1MHz VCE = -10V, IC = -50mA, f = 100MHz VCC = -10V, IC = -1A IB1 = IB2 = -10mA 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. ZXTC6718MC Document number: DS31927 Rev. 4 - 2 6 of 9 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC6718MC PNP - Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 0.25 1 IC/IB=50 Tamb=25°C VCE(SAT) (V) VCE(SAT) (V) 0.20 100m IC/IB=100 IC/IB=50 10m IC/IB=10 1m 10m 100m 1 25°C 0.10 -55°C 0.05 0.00 1m 10 IC Collector Current (A) 100°C 0.15 10m 630 540 1.0 450 25°C 360 0.6 270 0.4 180 -55°C 0.2 0.0 1m 90 10m 100m 1.0 0 10 1 VBE(SAT) (V) Normalised Gain VCE=2V 100°C Typical Gain (hFE) 1.4 0.8 10 1 10 IC/IB=50 0.8 -55°C 0.6 25°C 100°C 0.4 1m IC Collector Current (A) hFE v IC 1.0 1 VCE(SAT) v IC VCE(SAT) v IC 1.2 100m IC Collector Current (A) 10m 100m IC Collector Current (A) VBE(SAT) v IC VCE=2V VBE(ON) (V) 0.8 -55°C 0.6 25°C 0.4 0.2 1m 100°C 10m 100m 1 IC Collector Current (A) 10 VBE(ON) v IC ZXTC6718MC Document number: DS31927 Rev. 4 - 2 7 of 9 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC6718MC Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A W-DFN3020-8 Type B Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z 0.375 All Dimensions in mm A3 A1 D D4 D4 D2 E E2 Z b e L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C X Y1 G1 G Y2 Y X1 ZXTC6718MC Document number: DS31927 Rev. 4 - 2 Dimensions C G G1 X X1 Y Y1 Y2 8 of 9 www.diodes.com Value (in mm) 0.650 0.285 0.090 0.400 1.120 0.730 0.500 0.365 October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC6718MC IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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