DMN3029LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary NEW PRODUCT ADVANCE INFORMATION V(BR)DSS Features • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products 8.0A • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product 6.5A • 100% UIS (Avalanche) rated RDS(ON) ID TA = 25°C 18.6mΩ @ VGS = 10V 26.5mΩ @ VGS = 4.5V 30V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • • • • 100% Rg tested • • • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • Case: POWERDI3333-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (approximate) • • • Backlighting DC-DC Converters Power management functions • POWERDI3333-8 Pin 1 S S S 1 8 2 7 3 6 4 5 G D D D D Top View Bottom View Top View Internal Schematic Ordering Information (Note 4) Part Number DMN3029LFG-7 DMN3029LFG-13 Notes: Case POWERDI3333-8 POWERDI3333-8 Packaging 2000 / Tape & Reel 3000 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information N39 = Product marking code YYWW = Date code marking YY = Last digit of year (ex: 10 for 2010) WW = Week code (01 – 53) POWERDI is a registered trademark of Diodes Incorporated. DMN3029LFG Document number: DS35448 Rev. 7 - 2 1 of 7 www.diodes.com October 2012 © Diodes Incorporated DMN3029LFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Continuous Drain Current (Note 5) VGS = 10V Steady State Continuous Drain Current (Note 6) VGS = 10V Steady State Continuous Drain Current (Note 6) VGS = 10V t ≤ 10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State Continuous Drain Current (Note 6) VGS = 4.5V t ≤ 10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Pulsed Drain Current (Note 7) Avalanche Current (Notes 7 & 8) Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH ID Value 30 ±25 5.3 4.2 Unit V V ID 8.0 6.3 A ID 9.5 7.7 A ID 6.5 4.9 A A IDM IAR EAR 7.8 6.2 70 18 16 A A mJ Symbol PD RθJA PD RθJA PD RθJA TJ, TSTG Max 1.0 130.6 2.07 62.5 3.0 43.8 -55 to +150 Unit W °C/W W °C/W W °C/W °C ID A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) Power Dissipation (Note 6) t ≤ 10s Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) t ≤ 10s Operating and Storage Temperature Range Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided. 7. Repetitive rating, pulse width limited by junction temperature. 8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C. 100 400 P(PK), PEAK TRANSIENT POIWER (W) PW = 10µs RDS(on) Limited ID, DRAIN CURRENT (A) NEW PRODUCT ADVANCE INFORMATION Drain-Source Voltage Gate-Source Voltage 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms PW = 1ms PW = 100µs 0.1 TJ(max) = 150°C TA = 25°C Single Pulse 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 SOA, Safe Operation Area 100 350 300 Single Pulse RθJA = 60°C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) 250 200 150 100 50 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation POWERDI is a registered trademark of Diodes Incorporated. DMN3029LFG Document number: DS35448 Rev. 7 - 2 2 of 7 www.diodes.com October 2012 © Diodes Incorporated DMN3029LFG NEW PRODUCT ADVANCE INFORMATION r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t)=r(t) * RθJA RθJA = 60°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 3 Transient Thermal Resistance 10 100 1,000 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 0.1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±25V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 1.2 13,5 22 13.0 0.7 1.8 18.6 26.5 1.0 V Static Drain-Source On-Resistance 0.9 - VDS = VGS, ID = 250μA VGS = 10V, ID = 10A VGS = 4.5V, ID = 7.5A VDS = 5V, ID = 10A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 580 110 70 2.0 5.3 11.3 1.9 1.9 4.4 4.6 19.5 5.8 3.0 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 4.5V Total Gate Charge VGS = 10V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 10A nC VGS = 10V, VDS = 15V, ID = 10A ns ns ns ns VGS = 10V, VDS = 15V, RL = 15Ω, RG = 6Ω 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. POWERDI is a registered trademark of Diodes Incorporated. DMN3029LFG Document number: DS35448 Rev. 7 - 2 3 of 7 www.diodes.com October 2012 © Diodes Incorporated DMN3029LFG 30 30 VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 20 VGS = 10V VGS = 3.5V 15 10 VGS = 3.0V VGS = 85°C 20 VGS = 150°C 15 10 VGS = 25°C 5 5 VGS = 125°C VGS = 2.5V 0.032 VGS = 4.5V 0.028 0.024 0.02 0.016 0.012 VGS = 10V 0.008 0.004 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage 1.6 30 VGS = 10V ID = 10A 1.4 VGS = 4.5V ID = 5A 1.2 1.0 0.8 0.6 -50 0 0 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Output Characteristic -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 On-Resistance Variation with Temperature RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT ADVANCE INFORMATION 25 VGS = -55°C VDS = 5V VGS = 4.0V 0.5 0.05 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 5 Typical Transfer Characteristic VGS = 4.5V 5 TA = 150°C 0.045 TA = 125°C 0.04 0.035 0.03 T A = 85°C 0.025 0.02 TA = 25°C 0.015 T A = -55°C 0.01 0.005 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 7 Typical On-Resistance vs. Drain Current and Temperature 30 0.04 0.035 VGS = 4.5V ID = 5A 0.03 0.025 0.02 VGS = 10V ID = 10A 0.015 0.01 0.005 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 9 On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMN3029LFG Document number: DS35448 Rev. 7 - 2 4 of 7 www.diodes.com October 2012 © Diodes Incorporated DMN3029LFG 30 1.5 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 25 ID = 1mA ID = 250µA 1 0.5 20 T A = 25°C 15 10 5 0 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 10 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 11 Diode Forward Voltage vs. Current 10,000 1,000 CISS COSS 100 CRSS IDSS, LEAKAGE CURRENT (nA) f = 1MHz CT, CAPACITANCE (pF) NEW PRODUCT ADVANCE INFORMATION 2 TA = 150°C 1,000 T A = 125°C 100 T A = 85°C 10 TA = 25°C 10 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Total Capacitance 20 1 0 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 13 Typical Leakage Current vs. Drain-Source Voltage 30 POWERDI is a registered trademark of Diodes Incorporated. DMN3029LFG Document number: DS35448 Rev. 7 - 2 5 of 7 www.diodes.com October 2012 © Diodes Incorporated DMN3029LFG Package Outline Dimensions NEW PRODUCT ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A3 A1 D D2 L (4x) 1 Pin 1 ID 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) POWERDI3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 − − b 0.27 0.37 0.32 b2 0.20 − − L 0.35 0.45 0.40 L1 0.39 − − e 0.65 − − Z 0.515 − − All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X G 8 Y2 5 G1 Y1 Y 1 4 Y3 X2 Dimensions C G G1 Y Y1 Y2 Y3 X X2 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 C POWERDI is a registered trademark of Diodes Incorporated. DMN3029LFG Document number: DS35448 Rev. 7 - 2 6 of 7 www.diodes.com October 2012 © Diodes Incorporated DMN3029LFG NEW PRODUCT ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2012, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMN3029LFG Document number: DS35448 Rev. 7 - 2 7 of 7 www.diodes.com October 2012 © Diodes Incorporated