ZXMP6A13FQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications. Mechanical Data V(BR)DSS Max RDS(on) -60V 400mΩ @ VGS = -10V 600mΩ @ VGS = -4.5V Max ID TA = +25°C -1.1A -0.9A Applications DC - DC converters Power management functions Relay and solenoid driving Motor control Fast switching speed Low input capacitance Low gate charge Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Available Case: SOT23 Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) SOT23 D S G D G S Equivalent Circuit Top View Pin Out Top View Ordering Information (Notes 4 & 5) Product ZXMP6A13FQTA Notes: Compliance Automotive Case SOT23 Quantity per reel 3,000 Units 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information 7P6 ZXMP6A13FQ Document Number DS36684 Rev. 2 - 2 7P6 = Product Type Marking Code 1 of 8 www.diodes.com December 2013 © Diodes Incorporated ZXMP6A13FQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = 10V TA = +70°C Pulsed Drain Current (Note 8) Continuous Source Current (Body Diode) (Note 7) Pulsed Source Current (Body Diode) (Note 8) (Note 7) (Note 7) (Note 6) ID IDM IS ISM Value -60 ±20 -1.1 -0.8 -0.9 -4.0 -1.2 -4.0 Units V V Value 625 5 806 6.5 200 155 194 -55 to +150 Unit mW mW/°C mW mW/°C °C/W °C/W °C/W °C A A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 6) Linear Derating Factor Power Dissipation (Note 7) Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Leads (Note 9) Operating and Storage Temperature Range Notes: Symbol PD PD RθJA RθJA RθJL TJ, TSTG 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 7. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs. 8. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05 pulse width = 10μs - pulse current limited by maximum junction temperature. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). ZXMP6A13FQ Document Number DS36684 Rev. 2 - 2 2 of 8 www.diodes.com December 2013 © Diodes Incorporated ZXMP6A13FQ Thermal Characteristics 10 -ID Drain Current (A) Limited 1 DC 1s 100m 100ms 10ms 10m Single Pulse Tamb=25°C 1 1ms 100µs 10 -VDS Drain-Source Voltage (V) 100 Max Power Dissipation (W) 0.7 RDS(on) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 200 T amb=25°C 150 D=0.5 100 50 Single Pulse D=0.2 D=0.05 D=0.1 0 100µ 1m 10m 100m 1 Pulse Width (s) 10 Document Number DS36684 Rev. 2 - 2 80 100 120 140 160 100 1k Single Pulse T amb=25°C 10 1 100µ Transient Thermal Impedance ZXMP6A13FQ 60 Temperature (°C) Derating Curve Maximum Power (W) Thermal Resistance (°C/W) Safe Operating Area 40 1m 10m 100m 1 10 Pulse Width (s) 100 1k Pulse Power Dissipation 3 of 8 www.diodes.com December 2013 © Diodes Incorporated ZXMP6A13FQ Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -60 -0.5 ±100 V μA nA ID = -250μA, VGS = 0V VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) -1.0 V Static Drain-Source On-Resistance (Note 10) RDS (ON) Forward Transconductance (Notes 10 and 12) Diode Forward Voltage (Note 10) Reverse Recovery Time (Note 12) Reverse Recovery Charge (Note 12) DYNAMIC CHARACTERISTICS (Note 12) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (Note 11) Turn-On Rise Time (Note 11) Turn-Off Delay Time (Note 11) Turn-Off Fall Time (Note 11) gfs VSD trr Qrr 1.8 -0.85 21.1 19.3 -3.0 0.4 0.6 -0.95 ID = -250μA, VDS = VGS VGS = -10V, ID = -0.9A VGS = -4.5V, ID = -0.8A VDS = -15V, ID = -0.9A TJ = +25°C, IS = -0.8A, VGS = 0V Ciss Coss Crss tD(on) tr tD(off) tf 219 25.7 20.5 1.6 2.2 11.2 5.7 Total Gate Charge (Note 11) Qg 2.9 Total Gate Charge (Note 11) Gate-Source Charge (Note 11) Gate-Drain Charge (Note 11) Qg Qgs Qgd 5.9 0.74 1.5 Notes: Ω S V ns nC Test Condition TJ = +25°C, IF = -0.9A, di/dt = 100A/μs pF VDS = -30V, VGS = 0V f = 1.0MHz ns VDD = -30V, ID = -1A, RG 6.0Ω VGS = -10V nC VDS = -30V, VGS = -4.5V, ID = -0.9A nC VDS = -30V, VGS = -10V, ID = -0.9A 10. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%. 11. Switching characteristics are independent of operating junction temperature. 12. For design aid only, not subject to production testing ZXMP6A13FQ Document Number DS36684 Rev. 2 - 2 4 of 8 www.diodes.com December 2013 © Diodes Incorporated ZXMP6A13FQ Typical Characteristics T = 25°C 10V 10 4.5V -ID Drain Current (A) -ID Drain Current (A) 10 3.5V 3V 1 2.5V 2V 0.1 -VGS 10V 5V T = 150°C 1 4.5V 3.5V 3V 2.5V 2V 0.1 1.5V -VGS 0.01 0.1 1 10 0.1 -ID Drain Current (A) -VDS = 10V 1 T = 150°C T = 25°C 1 2 3 4 5 -VGS Gate-Source Voltage (V) 2.5V 2V T = 25°C 3V 3.5V 4V 5V 1 7V 10V 0.1 1 -ID Drain Current (A) 10 On-Resistance v Drain Current ZXMP6A13FQ Document Number DS36684 Rev. 2 - 2 -ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance -VGS 1.8 VGS = -10V 1.6 ID = -0.9A RDS(on) 1.4 1.2 VGS = VDS 1.0 ID = -250uA 0.8 VGS(th) 0.6 -50 0 50 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature Typical Transfer Characteristics 1.5V 10 Output Characteristics Normalised RDS(on) and VGS(th) Output Characteristics 0.1 1 -VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V) 10 T = 150°C T = 25°C 1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com December 2013 © Diodes Incorporated ZXMP6A13FQ Typical Characteristics - continued C Capacitance (pF) VGS = 0V f = 1MHz CISS 200 COSS 100 CRSS 0 0.1 1 10 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage -VGS Gate-Source Voltage (V) 10 300 8 6 4 2 VDS = -30V ID = -0.9A 0 0 1 2 3 4 5 6 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits ZXMP6A13FQ Document Number DS36684 Rev. 2 - 2 6 of 8 www.diodes.com December 2013 © Diodes Incorporated ZXMP6A13FQ Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. ° 7 l l A H SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm J K 1 K a M A 1 L L B C D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X ZXMP6A13FQ Document Number DS36684 Rev. 2 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 7 of 8 www.diodes.com December 2013 © Diodes Incorporated ZXMP6A13FQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2013, Diodes Incorporated www.diodes.com ZXMP6A13FQ Document Number DS36684 Rev. 2 - 2 8 of 8 www.diodes.com December 2013 © Diodes Incorporated