SBM4150 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEÒ3 ADVANCE INFORMATION Features · · · · · · Guard Ring Die Construction for Transient Protection High Surge Current Capability Very Low Leakage Current High Junction Temperature Capability For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 G P 3 D K C C L PIN 1 PIN 3, BOTTOMSIDE HEAT SINK PIN 2 Note: Dim Min Max A 4.03 4.09 B 6.40 6.61 C 0.864 0.914 D M Case: POWERMITEâ3 Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Moisture sensitivity: Level 1 per J-STD-020A Polarity: See Diagram Marking: Type Number (See Page 3) Weight: 0.072 grams (approx.) Ordering Information (See Page 3) Maximum Ratings H 2 Mechanical Data · · · · · J B 1 · · POWERMITEâ3 E A Pins 1 & 2 must be electrically connected at the printed circuit board. 1.83 NOM E 1.10 1.14 G .173 .203 H 5.01 5.17 J 4.37 4.43 K .173 .203 L .71 .77 M .36 .46 P 1.73 1.83 All Dimensions in mm @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol Value Unit VRRM VRWM VR 150 V VR(RMS) 106 V IO 4 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) IFSM 100 A Typical Thermal Resistance Junction to Soldering Point RqJS 2.5 °C/W Tj, TSTG -65 to +175 °C Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 165°C Operating and Storage Temperature Range Electrical Characteristics @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)R 150 ¾ ¾ V IR = 5.0mA Forward Voltage (Note 1) VF ¾ ¾ ¾ ¾ 0.71 ¾ 0.77 ¾ 0.75 0.64 0.81 0.70 V IF = 4A, TS = 25°C IF = 4A, TS = 125°C IF = 8A, TS = 25°C IF = 8A, TS = 125°C Reverse Leakage Current (Note 1) IR ¾ ¾ 0.15 ¾ 5.0 4.5 mA mA Characteristic Reverse Breakdown Voltage (Note 1) Notes: Test Condition TS = 25°C, VR = 150V TS = 125°C, VR = 150V 1. Short duration test pulse used to minimize self-heating effect. 04/25/03 10:00AM 1 of 3 www.diodes.com SBM4150 IR, INSTANTANEOUS REVERSE CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 Tj = +150°C 1 Tj = +25°C 0.1 Tj = +75°C 10 m Tj = +150°C 1m Tj = +75°C Tj = +25°C 100n 10n 1n 0.01 0 0.2 0.4 0.8 0.6 120 90 150 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics 8 PF, FORWARD POWER DISSIPATION (W) 5.0 Note 2 4.0 Note 4 3.0 Note 3 2.0 1.0 Note 5 Note 6 Tj = 175°C 6 Note 7 4 Note 8 2 0 0 0 50 100 175 150 TA, AMBIENT TEMPERATURE (°C) Fig. 3 DC Forward Current Derating Notes: 60 30 0 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics IF, DC FORWARD CURRENT (A) ADVANCE INFORMATION 100 0 1 2 3 4 5 6 7 8 9 10 IF, FORWARD CURRENT (A) Fig. 4 Forward Power Dissipation 2. TA = TSOLDERING POINT, RqJS = 2.0°C/W, RqSA = 0°C/W. 3. Device mounted on ceramic substrate, 2"x2", 2 oz. copper, single-sided, cathode pad dimensions 0.75"x1.0", anode pad dimensions 0.25"x1.0". RqJA in range of 18-23°C/W. 4. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, cathode pad dimensions 0.50" x 1.0", anode pad dimensions 0.50"x1.0". RqJA in range of 30-40°C/W. 5. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP2001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 85-95°C/W. 6. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 3. 7. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 4. 8. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 5. 04/25/03 10:00AM 2 of 3 www.diodes.com SBM4150 TA, DERATED AMBIENT TEMPERATURE (°C) ADVANCE INFORMATION 200 Note 3 Note 4 160 Note 5 120 80 40 0 0 50 100 150 VR, DC REVERSE VOLTAGE (V) Fig. 5 Operating Temperature Derating Notes: 2. TA = TSOLDERING POINT, RqJS = 2.0°C/W, RqSA = 0°C/W. 3. Device mounted on ceramic substrate, 2"x2", 2 oz. copper, single-sided, cathode pad dimensions 0.75"x1.0", anode pad dimensions 0.25"x1.0". RqJA in range of 18-23°C/W. 4. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, cathode pad dimensions 0.50" x 1.0", anode pad dimensions 0.50"x1.0". RqJA in range of 30-40°C/W. 5. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP2001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 85-95°C/W. 6. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 3. 7. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 4. 8. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 5. Ordering Information (Note 9) Notes: Device Packaging Shipping SBM4150-13 POWERMITEâ3 5000/Tape & Reel 9. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information SBM4150 YYWW(K) SBM4150 = Product type marking code = Manufacturers’ code marking YYWW = Date code marking YY = Last digit of year ex: 03 for 2003 WW = Week code 01 to 52 (K) = Factory Designator POWERMITE is a registered trademark of Microsemi Corporation. 04/25/03 10:00AM 3 of 3 www.diodes.com SBM4150