AOK50B60D1

AOK50B60D1
600V, 50A Alpha IGBT TM with Diode
General Description
Product Summary
The Alpha IGBTTM line of products offers best-in-class
performance in conduction and switching losses, with
robust short circuit capability. They are designed for ease
of paralleling, minimal gate spike under high dV/dt
conditions and resistance to oscillations.The soft copackaged diode is targeted for minimal losses in Welding
machines, Solar Inverter and UPS applications.
VCE
IC (TC=100°C)
600V
50A
VCE(sat) (TC=25°C)
1.85V
Top View
C
TO-247
G
C
AOK50B60D1
E
E
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Collector-Emitter Voltage
V CE
AOK50B60D1
600
Units
V
Gate-Emitter Voltage
V GE
±20
V
VGE Spike
VSPIKE
24
V
500ns
T
Continuous Collector C=25°C
TC=100°C
Current
100
IC
50
A
Pulsed Collector Current, Limited by TJmax
I CM
168
A
Turn off SOA, VCE ≤ 600V, Limited by TJmax
I LM
168
A
Continuous Diode
Forward Current
TC=25°C
TC=100°C
Diode Pulsed Current, Limited by TJmax
50
IF
25
A
I FM
168
A
Short circuit withstanding time VGE = 15V, VCE ≤
t SC
400V, Delay between short circuits ≥ 1.0s,
TC=25°C
10
µs
TC=25°C
Power Dissipation
TC=100°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
Maximum Diode Junction-to-Case
Rev.3.0: Nov 2013
PD
T J , T STG
TL
Symbol
R θ JA
R θ JC
R θ JC
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312
125
W
-55 to 150
°C
300
°C
AOK50B60D1
40
0.4
Units
°C/W
°C/W
1.2
°C/W
Page 1 of 9
AOK50B60D1
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
Conditions
STATIC PARAMETERS
BV CES
Collector-Emitter Breakdown Voltage
V CE(sat)
VF
V GE(th)
I CES
Min
IC=1mA, VGE=0V, TJ=25°C
VGE=15V, IC=50A
Collector-Emitter Saturation Voltage
VGE=0V, IC=25A
Diode Forward Voltage
VCE=600V, VGE=0V
Zero Gate Voltage Collector Current
Max
Units
V
600
-
-
TJ=25°C
-
1.85
2.4
TJ=125°C
-
2.2
-
TJ=150°C
-
2.3
-
TJ=25°C
-
1.4
1.9
TJ=125°C
-
1.37
-
TJ=150°C
-
1.34
-
-
5.6
-
TJ=25°C
-
-
10
TJ=125°C
-
-
800
TJ=150°C
-
-
4000
VCE=5V, IC=1mA
Gate-Emitter Threshold Voltage
Typ
V
V
V
µA
I GES
Gate-Emitter leakage current
VCE=0V, VGE=±20V
-
-
±100
nA
g FS
Forward Transconductance
VCE=20V, IC=50A
-
20
-
S
-
2572
-
pF
-
308
-
pF
DYNAMIC PARAMETERS
C ies
Input Capacitance
VGE=0V, VCE=25V, f=1MHz
C oes
Output Capacitance
C res
Reverse Transfer Capacitance
-
10
-
pF
Qg
Total Gate Charge
-
64
-
nC
Q ge
Gate to Emitter Charge
VGE=15V, VCE=480V, IC=50A
-
27
-
nC
Gate to Collector Charge
Short circuit collector current, Max.
1000 short circuits, Delay between
VGE=15V, VCE=400V, RG=25Ω
I C(SC)
short circuits ≥ 1.0s
Rg
Gate resistance
f=1MHz
SWITCHING PARAMETERS, (Load Iductive, TJ=25°C)
-
19
-
nC
-
168
-
A
-
1.53
-
Ω
t D(on)
Turn-On DelayTime
-
26
-
ns
tr
Turn-On Rise Time
-
70
-
ns
t D(off)
Turn-Off Delay Time
-
68
-
ns
tf
Turn-Off Fall Time
-
18
-
ns
mJ
Q gc
TJ=25°C
VGE=15V, VCE=400V, IC=50A,
RG=6Ω,
Parasitic Ιnductance=150nH
E on
Turn-On Energy
-
2.37
-
E off
Turn-Off Energy
-
0.5
-
mJ
E total
t rr
Total Switching Energy
-
2.87
-
mJ
Diode Reverse Recovery Time
-
132
-
Q rr
Diode Reverse Recovery Charge
-
0.77
-
ns
µC
Diode Peak Reverse Recovery Current
SWITCHING PARAMETERS, (Load Iductive, TJ=150°C)
-
9
-
A
t D(on)
Turn-On DelayTime
-
24
-
ns
tr
Turn-On Rise Time
-
74
-
ns
t D(off)
Turn-Off Delay Time
-
84
-
ns
tf
Turn-Off Fall Time
-
20
-
ns
E on
Turn-On Energy
-
2.7
-
mJ
E off
Turn-Off Energy
-
0.9
-
mJ
E total
t rr
Total Switching Energy
-
3.6
-
mJ
Diode Reverse Recovery Time
-
220
-
Q rr
Diode Reverse Recovery Charge
-
1.46
-
ns
µC
I rm
Diode Peak Reverse Recovery Current
-
12.7
-
A
TJ=25°C
IF=25A,dI/dt=200A/µs,VCE=400V
I rm
TJ=150°C
VGE=15V, VCE=400V, IC=50A,
RG=6Ω,
Parasitic Inductance=150nH
TJ=150°C
IF=25A,dI/dt=200A/µs,VCE=400V
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.3.0: Nov 2013
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Page 2 of 9
AOK50B60D1
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250
200
20V
17V
20V
17V
200
15V
150
150
IC (A)
IC (A)
15V
13V
13V
100
100
11V
11V
50
50
VGE= 7V
9V
9V
VGE=7V
0
0
0
1
2
3
4
5
6
7
0
VCE(V)
Fig 1: Output Characteristic
(Tj=25°C )
1
2
4
5
6
7
100
100
VCE=20V
-40°C
80
80
60
60
IF (A)
IC (A)
3
VCE(V)
Fig 2: Output Characteristic
(Tj=150°C )
40
40
150°C
20
20
25°C
150°C
-40°C
0
25°C
0
4
8
12
16
0.0
20
VGE(V)
Fig 3: Transfer Characteristic
0.5
1.0
1.5
2.0
2.5
3.0
VF (V)
Fig 4: Diode Characteristic
5
8
IC=100A
7
3
VGE(TH)(V)
VCE(sat) (V)
4
IC=50A
2
5
4
IC=25A
1
6
3
0
0
25
50
75
100
125
150
175
Temperature (°C)
Fig 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
Rev.3.0: Nov 2013
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2
0
30
60
90
TJ (°C)
Figure 6: VGE(TH) vs. Tj
120
150
Page 3 of 9
AOK50B60D1
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VCE=480V
IC=50A
9
Capacitance (pF)
VGE (V)
12
6
3
1000
Cies
100
Coes
10
Cres
0
1
0
10
20
30
40
50
60
70
0
5
Qg(nC)
Fig 7: Gate-Charge Characteristics
10
15
20
25
30
35
40
VCE(V)
Fig 8: Capacitance Characteristic
350
300
Power Disspation (W)
250
200
150
100
50
0
25
50
75
100
125
150
TCASE(°C)
Fig 10: Power Disspation as a Function of Case
100
Current rating IC(A)
80
60
40
20
0
25
50
75
100
125
150
TCASE(°C)
Fig 11: Current De-rating
Rev.3.0: Nov 2013
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Page 4 of 9
AOK50B60D1
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
Td(off)
Tf
Switching Time (nS)
1000
Switching Time (nS)
10000
Td(off)
Tf
Td(on)
Tr
100
10
Tr
100
10
1
1
0
20
40
60
80
IC (A)
Figure 12: Switching Time vs. IC
(Tj=150°C,VGE=15V,VCE=400V,Rg=6Ω
Ω)
1000
Switching Time (nS)
Td(on)
1000
100
120
0
20
40
60
Rg (Ω
Ω)
Figure 13: Switching Time vs. Rg
(Tj=150°C,VGE=15V,VCE=400V,IC=50A)
80
Td(off)
Tf
Td(on)
Tr
100
10
1
0
50
100
150
TJ (°C)
Figure 14: Switching Time vs.Tj
( VGE=15V,VCE=400V,IC=50A,Rg=6Ω
Ω)
Rev.3.0: Nov 2013
200
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Page 5 of 9
AOK50B60D1
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
6
Eoff
Eoff
Eon
Switching Energy (mJ)
SwitchIng Energy (mJ)
16
Eon
5
Etotal
12
8
4
Etotal
4
3
2
1
0
0
0
20
40
60
80
100
IC (A)
Figure 15: Switching Loss vs. IC
(Tj=150°C,VGE=15V,VCE=400V,Rg=6Ω
Ω)
120
0
5
20
40
60
Rg (Ω
Ω)
Figure 16: Switching Loss vs. Rg
(Tj=150°C,VGE=15V,VCE=400V,IC=50A)
6
Eoff
Eoff
4
5
Eon
Switching Energ y (mJ)
Etotal
Switching Energy (mJ)
80
3
2
1
0
Eon
Etotal
4
3
2
1
0
0
25
75
100
125
150
TJ (°C)
Figure 17: Switching Loss vs. Tj
(VGE=15V,VCE=400V,IC=50A,Rg=6Ω
Ω)
Rev.3.0: Nov 2013
50
175
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200
250
300
350
400
450
VCE (V)
Figure 18: Switching Loss vs. VCE
(Tj=150°C,VGE=15V,IC=50A,Rg=6Ω
Ω)
500
Page 6 of 9
AOK50B60D1
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.E-03
2.2
1.E-04
1.8
50A
25A
VSD (V)
ICE(S) (A)
VCE=600V
1.E-05
VCE=400V
1.E-06
1.4
13V
5A
1
IF=1A
1.E-07
0.6
1.E-08
0.2
0
25
50
75
100
125
150
175
200
0
50
75
100
125
150
Temperature (°C )
Fig 20: Diode Forward voltage vs. Junction
Temperature
Temperature (°C )
Fig 19: Diode Reverse Leakage Current vs.
Junction Temperature
2000
80
150°C
150°C
8
30
25°C
S
150
4
25°C
100
20
150°C
400
6
Trr (nS)
40
800
Trr
200
50
1200
Irm(A)
Qrr (nC)
250
60
Qrr
Irm
150°C
2
50
10
S
25°C
0
2500
25°C
0
0
0
10
20
30
40
50
60
0
IF(A)
Fig 21: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µ
µs)
10
0
20
30
40
50
60
IS (A)
Fig 22: Diode Reverse Recovery Time and Softness
Factor vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µ
µs)
12
250
80
70
Qrr
8
30
150°C
Irm
25°C
0
200
Trr
25°C
50
4
150°C
25°C
0
400 500 600 700 800
di/dt (A/µ
µS)
Fig 23: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
(VGE=15V,VCE=400V,IF=25A)
Rev.3.0: Nov 2013
6
S
100
10
0
100
150
2
S
500
20
Irm(A)
40
25°C
150°C
60
50
1500
1000
10
200
150°C
Trr (nS)
2000
Qrr (nC)
175
10
300
70
1600
25
300
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100
200
0
300
400
500
600
700
800
di/dt (A/µ
µS)
Fig 24: Diode Reverse Recovery Time and Softness
Factor vs. di/dt
(VGE=15V,VCE=400V,IF=25A)
Page 7 of 9
AOK50B60D1
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.4°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for Diode
Rev.3.0: Nov 2013
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Page 8 of 9
AOK50B60D1
Rev.3.0: Nov 2013
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Page 9 of 9