AOT10B65M1/AOB10B65M1

AOT10B65M1/AOB10B65M1
650V, 10A Alpha IGBT TM
With soft and fast recovery anti-parallel diode
General Description
Product Summary
• Latest AlphaIGBT (α IGBT) technology
• 650V breakdown voltage
• Very fast and soft recovery freewheeling diode
• High efficient turn-on di/dt controllability
• Low VCE(SAT) enables high efficiencies
• Low turn-off switching loss and softness
• Very good EMI behavior
• High short-circuit ruggedness
VCE
IC (TC=100°C)
650V
10A
VCE(sat) (TJ=25°C)
1.6V
Applications
• Motor Drives
• Sewing Machines
• Home Appliances
• Fan, Pumps, Vacuum Cleaner
• Other Hard Switching Applications
TO-263
D2PAK
C
TO-220
G
C
C
E
E
AOT10B65M1
Orderable Part Number
G
G
E
AOB10B65M1
Package Type
Form
Minimum Order Quantity
AOT10B65M1
TO220
Tube
1000
TO263
Tape & Reel
800
AOB10B65M1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT10B65M1/AOB10B65M1
Collector-Emitter Voltage
V CE
650
Gate-Emitter Voltage
V GE
±30
Units
V
V
Continuous Collector TC=25°C
TC=100°C
Current
IC
Pulsed Collector Current, Limited by TJmax
I CM
30
A
Turn off SOA, VCE≤650V, Limited by TJmax
I LM
30
A
Continuous Diode
Forward Current
TC=25°C
TC=100°C
IF
20
10
20
10
A
A
Diode Pulsed Current, Limited by TJmax
I FM
30
A
Short circuit withstanding time 1)
VGE=15V, VCC≤400V, TJ≤175°C
t SC
5
µs
TC=25°C
Power Dissipation
TC=100°C
Junction and Storage Temperature Range
PD
T J , T STG
150
75
-55 to 175
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
300
TL
Thermal Characteristics
Parameter
Symbol
AOT10B65M1/AOB10B65M1
R θ JA
65
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
R θ JC
1
Maximum Diode Junction-to-Case
R θ JC
3.3
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Rev.1.0: April 2015
www.aosmd.com
W
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 9
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV CES
Collector-Emitter Breakdown Voltage
IC=1mA, VGE=0V, TJ=25°C
650
-
-
V
V CE(sat)
VGE=15V, IC=10A
Symbol
VF
Collector-Emitter Saturation Voltage
VGE=0V, IC=10A
Diode Forward Voltage
V GE(th)
Gate-Emitter Threshold Voltage
VCE=5V, IC=1mA
I CES
Zero Gate Voltage Collector Current
VCE=650V, VGE=0V
TJ=25°C
-
1.6
2
TJ=125°C
-
1.86
-
TJ=175°C
-
2.02
-
V
TJ=25°C
-
1.9
2.4
TJ=125°C
-
1.96
-
TJ=175°C
-
1.91
-
-
5.1
-
V
V
TJ=25°C
-
-
10
TJ=125°C
-
-
100
TJ=175°C
-
-
1000
µA
I GES
Gate-Emitter leakage current
VCE=0V, VGE=±30V
-
-
±100
nA
g FS
Forward Transconductance
VCE=20V, IC=10A
-
9
-
S
-
655
-
pF
-
68
-
pF
DYNAMIC PARAMETERS
C ies
Input Capacitance
VGE=0V, VCC=25V, f=1MHz
C oes
Output Capacitance
C res
Reverse Transfer Capacitance
-
25
-
pF
Qg
Total Gate Charge
-
24
-
nC
Q ge
Gate to Emitter Charge
-
5.5
-
nC
Q gc
Gate to Collector Charge
-
12
-
nC
I C(SC)
Short circuit collector current
-
70
-
A
VGE=0V, VCC=0V, f=1MHz
Rg
Gate resistance
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
-
5.8
-
Ω
VGE=15V, VCC=520V, IC=10A
VGE=15V, VCC=400V,
tsc≤5us, TJ≤175°C
t D(on)
Turn-On DelayTime
-
12
-
ns
tr
Turn-On Rise Time
-
16
-
ns
t D(off)
Turn-Off Delay Time
-
91
-
ns
tf
Turn-Off Fall Time
-
14
-
ns
E on
Turn-On Energy
-
0.18
-
mJ
E off
Turn-Off Energy
-
0.13
-
mJ
E total
t rr
Total Switching Energy
-
0.31
-
mJ
Diode Reverse Recovery Time
-
263
-
Q rr
Diode Reverse Recovery Charge
TJ=25°C
VGE=15V, VCC=400V, IC=10A,
RG=30Ω
-
0.4
-
ns
µC
Diode Peak Reverse Recovery Current
SWITCHING PARAMETERS, (Load Inductive, TJ=175°C)
-
3.8
-
A
t D(on)
Turn-On DelayTime
-
10
-
ns
tr
Turn-On Rise Time
-
17
-
ns
t D(off)
Turn-Off Delay Time
-
111
-
ns
tf
Turn-Off Fall Time
-
26
-
ns
E on
Turn-On Energy
-
0.2
-
mJ
E off
Turn-Off Energy
-
0.23
-
mJ
E total
t rr
Total Switching Energy
-
0.43
-
mJ
Diode Reverse Recovery Time
-
262
-
Q rr
Diode Reverse Recovery Charge
-
0.7
-
ns
µC
I rm
Diode Peak Reverse Recovery Current
-
5
-
A
TJ=25°C
IF=10A, di/dt=200A/µs, VCC=400V
I rm
TJ=175°C
VGE=15V, VCC=400V, IC=10A,
RG=30Ω
TJ=175°C
IF=10A, di/dt=200A/µs, VCC=400V
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: April 2015
www.aosmd.com
Page 2 of 9
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
20V
17V
20V
15V
40
40
17V
15V
IC (A)
IC (A)
13V
30
11V
20
30
13V
20
9V
11V
9V
10
10
VGE= 7V
VGE=7V
0
0
0
1
2
3
4
5
6
0
7
1
30
3
4
5
6
7
30
VCE=20V
25
25
20
-40°C
20
175°C
IF (A)
IC (A)
2
VCE (V)
Figure 2: Output Characteristic
(Tj=175°C)
VCE (V)
Figure 1: Output Characteristic
(Tj=25°C)
15
175°C
15
25°C
10
10
25°C
-40°C
5
5
0
0
3
6
9
12
15
0
1
VGE (V)
Figure 3: Transfer Characteristic
3
4
2.5
IC=20A
4
5
20A
2
3
VSD (V)
VCE(sat) (V)
3
VF (V)
Figure 4: Diode Characteristic
5
IC=10A
2
2
10A
1.5
5A
1
1
IF=1A
IC=5A
0.5
0
0
0
25
75
100
125
150
175
Temperature (°C)
Figure 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
Rev.1.0: April 2015
50
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0
25
50
75
100
125
150
175
Temperature (°C)
Figure 6: Diode Forward voltage vs. Junction
Temperature
Page 3 of 9
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VCE=520V
IC=10A
12
Cies
Capacitance (pF)
1000
VGE (V)
9
6
Cres
10
3
0
1
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
16
24
32
40
200
10µs
100µs
1
DC
1ms
10ms
0.1
Power Disspation (W)
160
10
120
80
40
0
0.01
1
10
100
25
1000
VCE (V)
Figure 9: Forward Bias Safe Operating Area
(TC=25°C, VGE=15V)
50
75
100
125
150
175
TCASE (°C)
Figure 10: Power Disspation as a Function of Case
30
1E-03
25
1E-04
20
1E-05
ICE(S) (A)
Current rating IC (A)
8
VCE (V)
Figure 8: Capacitance Characteristic
100
Ic (A)
Coes
100
15
1E-06
VCE=520V
10
1E-07
5
1E-08
0
VCE=650V
1E-09
25
50
75
100
125
150
175
TCASE (°C)
Figure 11: Current De-rating
Rev.1.0: April 2015
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
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Page 4 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
Td(off)
Tf
Td(on)
Tr
1000
Switching Time (ns)
1000
Switching Time (ns)
10000
Td(off)
Tf
Td(on)
Tr
100
10
1
100
10
1
5
8
11
14
17
20
0
IC (A)
Figure 13: Switching Time vs. IC
(Tj=175°C, VGE=15V, VCE=400V, Rg=30Ω)
150
200
250
300
7
Td(off)
Tf
Td(on)
Tr
1000
100
Rg (Ω)
Figure 14: Switching Time vs. Rg
(Tj=175°C, VGE=15V, VCE=400V, IC=10A)
6
5
VGE(TH) (V)
Switching Time (ns)
10000
50
100
4
3
10
2
1
1
25
Rev.1.0: April 2015
50
75
100
125
150
TJ (°C)
Figure 15: Switching Time vs.Tj
(VGE=15V, VCE=400V, IC=10A, Rg=30Ω)
175
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0
25
50
75
100
125
150
175
TJ (°C)
Figure 16: VGE(TH) vs. Tj
Page 5 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.5
1.5
Eoff
Eoff
1.2
Switching Energy (mJ)
1.2
SwitchIng Energy (mJ)
Eon
Eon
Etotal
0.9
0.6
0.3
Etotal
0.9
0.6
0.3
0
0
5
8
11
14
17
20
0
IC (A)
Figure 17: Switching Loss vs. IC
(Tj=175°C, VGE=15V, VCE=400V, Rg=30Ω)
50
150
200
250
300
Rg (Ω)
Figure 18: Switching Loss vs. Rg
(Tj=175°C, VGE=15V, VCE=400V, IC=10A)
0.6
0.6
Eoff
Eoff
Eon
Eon
0.48
Switching Energy (mJ)
0.48
Switching Energy (mJ)
100
Etotal
0.36
0.24
0.12
Etotal
0.36
0.24
0.12
0
0
25
50
75
100
125
150
175
TJ (°C)
Figure 19: Switching Loss vs. Tj
(VGE=15V, VCE=400V, IC=10A, Rg=30Ω)
Rev.1.0: April 2015
www.aosmd.com
200
250
300
350
400
450
500
VCE (V)
Figure 20: Switching Loss vs. VCE
(Tj=175°C, VGE=15V, IC=10A, Rg=30Ω)
Page 6 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
360
25
175°C
300
20
Trr
25
175°C
Irm (A)
15
25°C
Qrr
400
10
Trr (ns)
Qrr (nC)
240
600
180
15
120
Irm
175°C
20
25°C
5
200
5
175°C
0
0
8
11
14
17
0
20
0
5
IF (A)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
(VGE=15V, VCE=400V, di/dt=200A/µs)
1000
175°C
8
11
14
17
20
IF (A)
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
(VGE=15V, VCE=400V, di/dt=200A/µs)
360
25
800
S
60
25°C
5
10
25°C
30
300
20
25
175°C
Qrr
25°C
400
Trr (ns)
15
Irm (A)
Qrr (nC)
240
600
20
25°C
Trr
180
15
S
800
30
S
1000
10
120
175°C
200
Irm
5
25°C
0
0
100
60
5
S
25°C
0
200
300
400
500
600
di/dt (A/µs)
Figure 23: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
(VGE=15V, VCE=400V, IF=10A)
Rev.1.0: April 2015
10
175°C
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0
100
200
300
400
500
600
di/dt (A/µs)
Figure 24: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
(VGE=15V, VCE=400V, IF=10A)
Page 7 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
Single Pulse
0.01
Ton
T
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
Single Pulse
0.01
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for Diode
Rev.1.0: April 2015
www.aosmd.com
Page 8 of 9
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Inductive Switching Test Circuit & Waveforms
Figure C: Diode Recovery Test Circuit & Waveforms
Rev.1.0: April 2015
www.aosmd.com
Page 9 of 9