AOTF20B65M2

AOTF20B65M2
650V, 20A Alpha IGBT TM
With soft and fast recovery anti-parallel diode
General Description
Product Summary
• Latest Alpha IGBT (α IGBT) technology
• 650V breakdown voltage
• Very fast and soft recovery freewheeling diode
• High efficient turn-on di/dt controllability
• Low VCE(sat) enables high efficiencies
• Low turn-off switching loss and softness
• Very good EMI behavior
• High short-circuit ruggedness
VCE
IC (TC=100°C)
650V
20A
VCE(sat) (TJ=25°C)
1.7V
Applications
• Motor Drives
• Sewing Machines
• Servo and General Purpose Inverters.
• Fan, Pumps, Vacuum Cleaner
• Other Hard Switching Applications
TO-220F
C
G
C
E
G
E
AOTF20B65M2
Orderable Part Number
Package Type
AOTF20B65M2
TO220F
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Collector-Emitter Voltage
V CE
Gate-Emitter Voltage
V GE
Form
Minimum Order Quantity
Tube
1000
AOTF20B65M2
650
Units
V
±30
V
402)
Continuous Collector TC=25°C
TC=100°C
Current
Pulsed Collector Current, Limited by TJmax
I CM
60
A
Turn off SOA, VCE≤650V, Limited by TJmax
I LM
60
A
Continuous Diode
Forward Current
TC=25°C
TC=100°C
Diode Pulsed Current, Limited by TJmax
Short circuit withstanding time 1)
VGE=15V, VCC≤400V, TJ≤150°C
Power Dissipation
TC=25°C
TC=100°C
Junction and Storage Temperature Range
IC
IF
202)
402)
202)
A
I FM
60
A
t SC
5
µs
PD
T J , T STG
45
18
-55 to 150
Maximum lead temperature for soldering
TL
300
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
AOTF20B65M2
Parameter
Symbol
R θ JA
Maximum Junction-to-Ambient
65
Maximum IGBT Junction-to-Case
R θ JC
2.8
Maximum Diode Junction-to-Case
R θ JC
3.2
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) TO220F IC follows TO220/TO263.
Rev.1.0: May 2015
A
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W
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 9
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV CES
Collector-Emitter Breakdown Voltage
IC=1mA, VGE=0V, TJ=25°C
650
-
-
V
V CE(sat)
VGE=15V, IC=20A
Symbol
VF
Collector-Emitter Saturation Voltage
VGE=0V, IC=20A
Diode Forward Voltage
V GE(th)
Gate-Emitter Threshold Voltage
VCE=5V, IC=1mA
I CES
Zero Gate Voltage Collector Current
VCE=650V, VGE=0V
TJ=25°C
-
1.7
2.15
TJ=125°C
-
2.02
-
TJ=150°C
-
2.11
-
TJ=25°C
-
1.56
2
TJ=125°C
-
1.65
-
TJ=150°C
-
1.63
-
-
5.1
-
V
V
V
TJ=25°C
-
-
10
TJ=125°C
-
-
500
TJ=150°C
-
-
1000
µA
I GES
Gate-Emitter leakage current
VCE=0V, VGE=±30V
-
-
±100
nA
g FS
Forward Transconductance
VCE=20V, IC=20A
-
14
-
S
-
1216
-
pF
-
156
-
pF
DYNAMIC PARAMETERS
C ies
Input Capacitance
VGE=0V, VCC=25V, f=1MHz
C oes
Output Capacitance
C res
Reverse Transfer Capacitance
-
50
-
pF
Qg
Total Gate Charge
-
46
-
nC
Q ge
Gate to Emitter Charge
-
12
-
nC
Q gc
Gate to Collector Charge
-
21
-
nC
-
115
-
A
VGE=0V, VCC=0V, f=1MHz
Gate resistance
Rg
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
-
13
-
Ω
ns
I C(SC)
VGE=15V, VCC=520V, IC=20A
VGE=15V, VCC=400V,
tsc≤5us, TJ≤150°C
Short circuit collector current
t D(on)
Turn-On DelayTime
-
26
-
tr
Turn-On Rise Time
-
32
-
ns
t D(off)
Turn-Off Delay Time
-
123
-
ns
tf
Turn-Off Fall Time
-
14
-
ns
E on
Turn-On Energy
-
0.58
-
mJ
E off
Turn-Off Energy
-
0.28
-
mJ
E total
t rr
Total Switching Energy
-
0.86
-
mJ
Diode Reverse Recovery Time
-
292
-
Q rr
Diode Reverse Recovery Charge
-
0.8
-
ns
µC
I rm
Diode Peak Reverse Recovery Current
SWITCHING PARAMETERS, (Load Inductive, TJ=150°C)
-
5.6
-
A
t D(on)
Turn-On DelayTime
-
25
-
ns
tr
Turn-On Rise Time
-
34
-
ns
t D(off)
Turn-Off Delay Time
-
146
-
ns
tf
Turn-Off Fall Time
-
22
-
ns
E on
Turn-On Energy
-
0.64
-
mJ
E off
Turn-Off Energy
-
0.44
-
mJ
E total
t rr
Total Switching Energy
-
1.08
-
mJ
-
432
-
Q rr
Diode Reverse Recovery Charge
-
1.5
-
ns
µC
I rm
Diode Peak Reverse Recovery Current
-
7.2
-
A
TJ=25°C
VGE=15V, VCC=400V, IC=20A,
RG=15Ω
TJ=25°C
IF=20A, di/dt=200A/µs, VCC=400V
TJ=150°C
VGE=15V, VCC=400V, IC=20A,
RG=15Ω
Diode Reverse Recovery Time
TJ=150°C
IF=20A, di/dt=200A/µs, VCC=400V
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: May 2015
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Page 2 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
90
75
20V
20V
17V
75
15V
60
13V
17V
60
45
IC (A)
IC (A)
15V
13V
11V
45
11V
30
9V
30
9V
15
15
VGE= 7V
VGE=7V
0
0
0
1
2
3
4
5
6
0
7
1
2
3
4
5
6
7
VCE (V)
Figure 2: Output Characteristic
(Tj=150°C)
VCE (V)
Figure 1: Output Characteristic
(Tj=25°C)
50
60
VCE=20V
50
40
-40°C
40
30
IF (A)
IC (A)
150°C
25°C
30
20
150°C
20
25°C
10
-40°C
10
0
0
3
6
9
12
15
0
0.5
VGE (V)
Figure 3: Transfer Characteristic
1
1.5
2
2.5
3
VF (V)
Figure 4: Diode Characteristic
5
3
2.5
4
40A
IC=40A
VSD (V)
VCE(sat) (V)
2
3
IC=20A
2
20A
1.5
5A
1
1
IC=10A
IF=1A
0.5
0
0
0
25
50
75
100
125
150
Temperature (°C)
Figure 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
Rev.1.0: May 2015
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0
25
50
75
100
125
150
Temperature (°C)
Figure 6: Diode Forward voltage vs. Junction
Temperature
Page 3 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VCE=520V
IC=20A
Cies
12
Capacitance (pF)
VGE (V)
1000
9
6
Coes
100
Cres
10
3
0
1
0
10
20
30
40
50
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
16
24
32
40
VCE (V)
Figure 8: Capacitance Characteristic
50
Power Disspation (W)
40
30
20
10
0
25
50
75
100
125
150
TCASE (°C)
Figure 10: Power Disspation as a Function of Case
20
1E-02
1E-03
1E-04
12
ICE(S) (A)
Current rating IC (A)
16
8
VCE=650V
1E-05
1E-06
VCE=520V
4
1E-07
0
1E-08
25
50
75
100
125
150
Rev.1.0: May 2015
0
25
50
75
100
125
150
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
TCASE (°C)
Figure 11: Current De-rating
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Page 4 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
100
10
1
100
10
1
10
15
20
25
30
35
IC (A)
Figure 13: Switching Time vs. IC
(Tj=150°C, VGE=15V, VCE=400V, Rg=15Ω)
10000
40
0
1000
30
60
90
120
Rg (Ω)
Figure 14: Switching Time vs. Rg
(Tj=150°C, VGE=15V, VCE=400V, IC=20A)
150
7
Td(off)
Tf
Td(on)
Tr
6
5
VGE(TH) (V)
Switching Time (ns)
Td(off)
Tf
Td(on)
Tr
1000
Switching Time (ns)
1000
Switching Time (ns)
10000
Td(off)
Tf
Td(on)
Tr
100
4
3
10
2
1
1
25
50
75
100
125
150
TJ (°C)
Figure 15: Switching Time vs.Tj
(VGE=15V, VCE=400V, IC=20A, Rg=15Ω)
Rev.1.0: May 2015
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0
25
50
75
100
125
150
TJ (°C)
Figure 16: VGE(TH) vs. Tj
Page 5 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3
3
Eoff
Eon
2.5
Etotal
Switching Energy (mJ)
SwitchIng Energy (mJ)
Eoff
Eon
2.5
2
1.5
1
Etotal
2
1.5
1
0.5
0.5
0
0
10
15
20
25
30
35
IC (A)
Figure 17: Switching Loss vs. IC
(Tj=150°C, VGE=15V, VCE=400V, Rg=15Ω)
0
40
30
90
120
150
Rg (Ω)
Figure 18: Switching Loss vs. Rg
(Tj=150°C, VGE=15V, VCE=400V, IC=20A)
1.5
1.5
Eoff
Eoff
Eon
Eon
1.2
1.2
Etotal
Switching Energy (mJ)
Switching Energy (mJ)
60
0.9
0.6
0.3
Etotal
0.9
0.6
0.3
0
0
25
50
75
100
125
150
TJ (°C)
Figure 19: Switching Loss vs. Tj
(VGE=15V, VCE=400V, IC=20A, Rg=15Ω)
Rev.1.0: May 2015
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200
250
300
350
400
450
VCE (V)
Figure 20: Switching Loss vs. VCE
(Tj=150°C, VGE=15V, IC=20A, Rg=15Ω)
500
Page 6 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
2000
40
600
32
480
150°C
24
360
25°C
30
25
150°C
1000
25°C
Qrr
16
Trr
15
S
Trr (ns)
Irm (A)
Qrr (nC)
20
1500
240
10
150°C
150°C
500
8
Irm
0
0
15
0
0
20
25
30
35
40
IF(A)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
(VGE=15V, VCE=400V, di/dt=200A/µs)
10
2000
40
600
1600
32
480
24
360
15
25
30
35
40
IF (A)
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
(VGE=15V, VCE=400V, di/dt=200A/µs)
25
25°C
800
16
Trr (ns)
150°C
1200
Irm (A)
Qrr (nC)
20
30
150°C
Qrr
5
25°C
20
Trr
15
25°C
S
25°C
10
S
120
240
10
150°C
400
8
Irm
150°C
120
5
25°C
25°C
0
0
100
200
300
400
500
600
di/dt (A/µs)
Figure 23: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
(VGE=15V, VCE=400V, IF=20A)
Rev.1.0: May 2015
S
0
0
100
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200
300
400
500
600
di/dt (A/µs)
Figure 24: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
(VGE=15V, VCE=400V, IF=20A)
Page 7 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.8°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
0.01
Single Pulse
Ton
0.001
T
0.0001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
0.01
Single Pulse
Ton
0.001
0.0001
1E-06
T
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for Diode
Rev.1.0: May 2015
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Page 8 of 9
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Inductive Switching Test Circuit & Waveforms
Figure C: Diode Recovery Test Circuit & Waveforms
Rev.1.0: May 2015
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Page 9 of 9