(CP603)JZD430 HIGH VOLTAGE RECTIFIER CHIP 1. FEATURE (1) SIPOS and Glass passivation double moat structure (2) High voltage (1600V) (3) Suitable for wire bond assembly (4) IF(AV)=25A 2. Die Size (1) 4.3mm×4.3mm 3. Application (1) Rectifier power supply (2) Other application for rectifier 4. Maximum Rating Items Repetitive Peak Reverse Voltage Non Repetitive Peak Revers Voltage Average Forward Current Peak Surge Forward Current Value For Fusing Operating Junction Temperature Symbol VRRM VRSM IF(AV) IFSM I2 t Tj K A Ta=25℃, Unless otherwise specified Value Condition Unit V Assembled for TO-220AB Package 1600 V Assembled for TO-220AB Package 1700 A Assembled for TO-220AB Package 25 A 60Hz/1cycle, Assembled for TO-220AB(W/B) 350 2 610 A s Tj = 150 °C, tp=8.3 ms, sin 180° ℃ -40～150 5. Out-going Inspection Items Reverse Current Forward Voltage Visual Inspection Symbol Unit IR VF mA V Standard Value Condition VR=1600V Min Ave Tj=25℃ － － Max 0.1 Tj=150℃ － － 1 － － 1.5 － － 0.95 － － 1.1 － － IF=25A, Assembled by TO-220AB IF=5A,CP Test (1) Glass Crack (2) Bristletail and dirty level of metal layer surface Inspection Numbers Extraction All Numbers A K Qidong JieJie Micro-electronic Co., Ltd. U V W Name of Part Explanation Symbol Unit Size Die Size U mm 4.3±0.05 Outer size of the Moat V mm 4.18±0.05 Inner size of the Moat W mm 3.5±0.1 Metallization area X mm 3.4±0.1 Wafer Thickness Y μm 300±10 Depth of the Moat Z μm 115±20 Front μm 6~8 Thickness of the Al(top) metal layer Rear μm 1.4~2.0 Ti-Ni-Ag X 6. Die Structure Z Y http://www.jiejie-cn.com 1/1