VRRM = IF = 1700 V 200 A Fast-Diode Die 5SLX 12M1711 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1663-01 Feb. 05 • • • • Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1) Parameter Symbol Repetitive peak reverse voltage Continuous forward current Repetitive peak forward current Junction temperature 1) min Unit VRRM 1700 V IF 200 A 400 A -40 125 °C min typ max Unit 1.4 1.65 2.0 V Limited by Tvjmax Tvj Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2 Diode characteristic values Parameter 2) Symbol Conditions Continuous forward voltage VF IF = 200 A Continuous reverse current IR VR = 1700 V Peak reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 2) max IFRM Conditions Erec IF = 200 A, VR = 900 V, di/dt = 1000 A/µs, Lσ = 800 nH, Inductive load, Switch: 2x 5SMX12M1701 Tvj = 25 °C Tvj = 125 °C 1.7 Tvj = 25 °C V 100 µA Tvj = 125 °C 4 mA Tvj = 25 °C 150 A Tvj = 125 °C 192 A Tvj = 25 °C 59 µC Tvj = 125 °C 98 µC Tvj = 25 °C 520 ns Tvj = 125 °C 700 ns Tvj = 25 °C 46 mJ Tvj = 125 °C 75 mJ Characteristic values according to IEC 60747 - 2 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SLX 12M1711 400 150 25°C 125 300 250 Irr 125°C 100 200 Erec [mJ] IF [A] 250 200 Qrr 75 150 150 50 Qrr [µC], Irr [A] 350 300 Vcc = 900 V di/dt = 1000 A/µs Tvj = 125 °C Lσ = 800 nH 100 100 Erec 25 50 50 0 0 0.5 1 1.5 2 2.5 50 100 150 200 250 300 350 400 IF [A] VF [V] Fig. 1 Typical diode forward characteristics 300 Fig. 2 200 VCC = 900 V IF = 200 A di/dt = 1000 A/µs Tvj = 125 °C Lσ = 800 nH 200 100 Typical reverse recovery characteristics vs. forward current 100 200 0 75 -200 Irr Vcc = 900 V IF = 200 A Tvj = 125 °C Lσ = 800 nH 150 IF [A] VR [V] -400 -100 -600 -200 VR -300 -800 Erec [mJ] IR 0 50 25 50 -1000 -400 0 400 800 1200 1600 2000 -1200 2400 0 Typical diode reverse recovery behaviour 0 0 time [ns] Fig. 3 100 Qrr Erec Qrr [µC], Irr [A] 0 0 0 200 400 600 800 1000 1200 di/dt [A/µs] Fig. 4 Typical reverse recovery vs. di/dt ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1663-01 Feb. 05 page 2 of 3 5SLX 12M1711 Mechanical properties Parameter Unit Dimensions Overall die L x W 13.6 x 13.6 mm exposed LxW front metal 11.6 x 11.6 mm 385 ± 15 µm 4 µm 1.2 µm thickness Metallization 3) 3) front (A) AlSi1 back (K) Al / Ti / Ni / Ag For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline Drawing A (Anode) Note : All dimensions are shown in mm This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1663-01 Feb. 05