MOSFET SMDType Type SMD Dual N-Channel High Density Trench MOSFET KI8205T ( SOT-23-6 ) Unit: mm +0.1 0.4 -0.1 Features 0.4 Super high dense cell trench design for low RDS(on). 0.55 +0.2 1.6 -0.1 Surface Mount package. +0.2 2.8 -0.1 Rugged and reliable. 1 +0.02 0.15 -0.02 +0.01 -0.01 2 0-0.1 D1 +0.1 0.68 -0.1 +0.1 1.1 -0.1 +0.2 -0.1 D2 G1 S1 1 6 G1 D1/D2 2 5 D1/D2 S2 3 4 G2 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS Drain Current-Continuous @ TA = 25 *1 Drain Current-Continuou -Pulse *2 Drain-Source Diode Forward Current *1 Maximum Power Dissipation TA=25 *1 TA=75 Operating Junction and Storage Temperature Range Thermal Resistance,Junction-to-Ambient *1 Surface Mounted on FR4 Board , t 12 V ID 4.3 A IDM 21.5 A IS 1.7 A PD 1.25 0.75 TJ,TSTG - 55 to 150 RthJA 100 W /W 10sec . *2 Pulse width limited by maximum junction temperature. www.kexin.com.cn 1 SMD Type MOSFET Dual N-Channel High Density Trench MOSFET KI8205T Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max 20 Unit V Drain-Source Breakdown Voltage VDSS VGS = 0V , ID = 250 Zero Gate Voltage Drain Current IDSS VDS = 20V , VGS = 0V 1 Gate-Body Leakage IGSS VGS = 100 nA 1 V Gate Threshold Voltage *1 VGS(th) Drain-Source On-State Resistance *1 RDS(on) Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Turn-On Delay Time td(on) Turn-Off Delay Time tr Rise Time td(off) Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Diode Forward Voltage VSD *1 Pulse width 300 s , Duty Cycle ■ Marking Marking 2 Testconditions 8205 www.kexin.com.cn 2% . A 12V , VDS = 0V VDS = VGS , ID = 250uA 0.45 VGS = 4V , ID = 4.3A 30 VGS = 2.5V , ID = 3.4A 46 A m 550 VDS = 8V , VGS = 0V,f = 1.0MHz pF 164 138 VDD = 10V , ID = 1A 10 ns VGEN = 4.5V 8.2 ns RL = 10 25 ns RGEN = 6 6.7 ns 6.2 nC 1.8 nC VDS = 10V , ID = 3A,VGS = 4.5V 1.5 VGS = 0V , IS = 1.7A *1 nC 1.2 V