MOSFET SMD Type P-Channel Enhancement MOSFET KI2301T SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● VDS (V) =-12V 0.4 3 ■ Features 1 ● RDS(ON) ＜ 115mΩ (VGS =-4.5V) 0.55 ● ID =-2.8 A 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.05 0.1 -0.01 0-0.1 +0.1 0.38 -0.1 +0.1 0.97 -0.1 ● RDS(ON) ＜ 160mΩ (VGS =-2.5V) 1.Gate 2.Source 3.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -12 Gate-Source Voltage VGS ±10 Continuous Drain Current ID -2.8 A Power Dissipation PD 1.2 W Junction Temperature TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=-12V, VGS=0V,Tj = 25℃ Gate-Body leakage current IGSS VDS=0V, VGS=±10V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(On) VDS=VGS ID=-250μA Min Typ -12 -18 -0.45 Max Unit V 1 μA ±100 nA -1.1 V VGS=-4.5V, ID=-1A 115 VGS=-2.5V, ID=-0.5A 160 mΩ ■ Marking Marking A19T www.kexin.com.cn 1