MOSFET SMD Type P-Channel MOSFET 2SJ288 1.70 0.1 ■ Features ● VDS (V) =-60V ● ID =-0.5 A 0.42 0.1 ● RDS(ON) ＜ 3Ω (VGS =-10V) 0.46 0.1 ● RDS(ON) ＜ 4Ω (VGS =-4V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Drain-Source Voltage Parameter VDS -60 Gate-Source Voltage VGS ±15 ID -0.5 IDM -2 Continuous Drain Current Pulsed Drain Current (Note.1) Tc = 25 ℃ Power Dissipation PD 3.5 1.3 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 Unit V A W ℃ Note.1: PW ≤ 10 us, duty cycle ≤ 1% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-1mA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V -100 uA Gate-Body leakage current IGSS VDS=0V, VGS=±12V ±10 uA -2 V Gate to Source Cutoff Voltage VGS(off) Static Drain-Source On-Resistance RDS(On) Forward Transconductance gFS VGS=-10V ID=-1mA -60 V -1 VGS=-10V, ID=-250mA 3 VGS=-4V, ID=-250mA 4 VDS=-10V, ID=-250mA 240 400 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On DelayTime td(on) 7 Turn-On Rise Time tr 10 Turn-Off DelayTime td(off) Turn-Off Fall Time VSD mS 45 VGS=0V, VDS=-20V, f=1MHz 20 pF 5 See Speaified Test circuit tf Diode Forward Voltage Ω 35 ns 20 IS=-0.5A,VGS=0V -1 V ■ Marking Marking JE www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET 2SJ288 ■ Typical Characterisitics 2 www.kexin.com.cn MOSFET SMD Type P-Channel MOSFET 2SJ288 ■ Typical Characterisitics www.kexin.com.cn 3