MOSFET SMD Type P-Channel MOSFET SI2323DS-HF (KI2323DS-HF) SOT-23-3 Unit: mm ■ Features ● VDS (V) =-20V 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● RDS(ON) ＜ 52mΩ (VGS =-2.5V) 1 0.55 ● RDS(ON) ＜ 39mΩ (VGS =-4.5V) +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● ID =-4.7A (VGS =-4.5V) 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 ● RDS(ON) ＜ 68mΩ (VGS =-1.8V) +0.2 1.1 -0.1 ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 0-0.1 G 3 S +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain D 2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation ID Ta = 70℃ Thermal Resistance.Junction- to-Ambient t≤5 sec Steady State PD RthJA -3.7 -3.8 -2.9 A -20 1.25 0.75 0.8 0.48 W 100 166 RthJF 50 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Thermal Resistance.Junction- to-Foot V -4.7 IDM Ta = 25℃ Unit ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET SI2323DS-HF (KI2323DS-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Test Conditions ID=-250μA, VGS=0V Min Typ -20 VDS=-16V, VGS=0V -1 VDS=-16V, VGS=0V, TJ=55℃ -10 VDS=0V, VGS=±8V -0.4 nA -1.0 V VGS=-4.5V, ID=-4.7A 39 Static Drain-Source On-Resistance RDS(On) VGS=-2.5V, ID=-4.1A 52 ID(ON) VGS=-4.5V, VDS=-5V VGS=-1.8V, ID=-2A Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time Diode Forward Voltage *1Pulse test: PW ≤ 300us duty cycle ≤ 2%. ■ Marking D3* F www.kexin.com.cn IS VSD mΩ 68 -20 A 16 S 1020 VGS=0V, VDS=-10V, f=1MHz *1 pF 191 140 12.5 VGS=-4.5V, VDS=-10V, ID=-4.7A *1 19 nC 1.7 3.3 VGS=-4.5V, VDS=-10V, RL=10Ω,RGEN=6Ω ID=-1.0A *1 tf Maximum Body-Diode Continuous Current Marking VDS=-5V, ID=-4.7A μA ±100 VGS(th) VDS=VGS ID=-250μA Unit V Gate Threshold Voltage On state drain current 2 Max 25 40 43 65 71 110 48 75 5 sec -1.0 Steady State -0.6 IS=-1.0A,VGS=0V -0.7 ns -1.2 A V MOSFET SMD Type P-Channel MOSFET SI2323DS-HF (KI2323DS-HF) ■ Typical Characterisitics Output Characteristics 20 Transfer Characteristics 20 VGS = 5 thru 2.5 V TC = -55 C 16 2V I D - Drain Current (A) I D - Drain Current (A) 16 12 8 1.5 V 4 25 C 12 125 C 8 4 1V 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 2.5 1500 0.12 C - Capacitance (pF) ) r DS(on) - On-Resistance ( 2.0 Capacitance 1800 0.09 VGS = 1.8 V 0.06 VGS = 2.5 V 0.03 1200 Ciss 900 600 Coss 300 VGS = 4.5 V 0.00 Crss 0 0 4 8 12 16 20 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Junction Temperature Gate Charge 5 1.5 1.4 VDS = 6 V ID = 4.7 A 4 r DS(on) - On-Resistance ( ) (Normalized) V GS - Gate-to-Source Voltage (V) 1.5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.15 1.0 3 2 1 1.3 VGS = 4.5 V ID = 4.7 A 1.2 1.1 1.0 0.9 0.8 0.7 0 0 3 6 9 Qg - Total Gate Charge (nC) 12 15 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( C) www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET SI2323DS-HF (KI2323DS-HF) ■ Typical Characterisitics 20 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.15 r DS(on) - On-Resistance ( I S - Source Current (A) ) 10 TJ = 150 C TJ = 25 C 1 0.12 0.09 ID = 4.7 A ID = 2 A 0.06 0.03 0.00 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 Single Pulse Power 12 ID = 140 A 0.3 10 8 0.2 Power (W) V GS(th) Variance (V) 2 0.1 6 0.0 4 -0.1 2 TA = 25 C . -0.2 -50 -25 0 25 50 75 100 125 0 150 0.1 0.01 TJ - Temperature ( C) Safe Operating Area 100 IDM Limited rDS(on) Limited I D - Drain Current (A) 10 1 0.1 P(t) = 0.0001 P(t) = 0.001 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 TA = 25 C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) 4 www.kexin.com.cn 1 Time (sec) 100 10 100 600 MOSFET SMD Type P-Channel MOSFET SI2323DS-HF (KI2323DS-HF) ■ Typical Characterisitics Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 120 C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) www.kexin.com.cn 5