MOSFET SMD Type N-Channel MOSFET AO4496-HF (KO4496-HF) SOP-8 Unit:mm ■ Features ● VDS (V) = 30V ● ID = 10 A (VGS = 10V) 1.50 0.15 0.21 -0.02 +0.04 ● RDS(ON) ＜ 19.5mΩ (VGS = 10V) ● RDS(ON) ＜ 26mΩ (VGS = 4.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a 1 2 3 4 Pb−Free Lead Finish Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ ID IDM 50 Avalanche Current IAR 17 Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State EAR PD RthJA RthJL V 10 7.5 Pulsed Drain Current Repetitive Avalanche Energy Unit 14 3.1 2 A mJ W 40 75 ℃/W 24 TJ 150 Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO4496-HF (KO4496-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current Gate Threshold Voltage Test Conditions Min Typ ID=250μA, VGS=0V VDS=30V, VGS=0V 1 VDS=30V, VGS=0V, TJ=55℃ 5 IGSS VDS=0V, VGS=±20V VGS(th) VDS=VGS , ID=250uA RDS(On) VGS=10V, ID=10A 1.4 Forward Transconductance ID(ON) VGS=10V, VDS=5V gFS VDS= 5V, ID=10A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) 30 550 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=10A 3 4.9 13 4.6 6.1 1.8 td(on) 5 VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω trr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD Marking 2 4496 KC**** F www.kexin.com.cn nC 3.2 ns 24 IF= 10A, dI/dt= 500A/us 22 29 14 IS=1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. ■ Marking Ω 6 tf Qrr pF 9.8 Turn-On DelayTime Body Diode Reverse Recovery Charge 715 55 2.2 Body Diode Reverse Recovery Time S 110 Qgd Turn-Off Fall Time mΩ A Gate Drain Charge tr V 26 Qgs td(off) nA 2.5 50 Gate Source Charge Turn-Off DelayTime ±100 29 TJ=125℃ Qg Turn-On Rise Time uA 19.5 VGS=4.5V, ID=7.5A On State Drain Current Unit V VGS=10V, ID=10A Static Drain-Source On-Resistance Max 30 nC 3 A 1 V MOSFET SMD Type N-Channel MOSFET AO4496-HF (KO4496-HF) ■ Typical Characterisitics 50 50 10V 4.5V 4V 40 40 30 ID(A) 30 ID (A) VDS= 5V 3.5V 20 VGS= 3V 10 20 125°C 10 25°C 0 0 0 1 2 3 4 1 5 26 Normalized On On-Resistance RDS(ON) (mΩ Ω) 3 4 5 1.8 24 VGS= 4.5V 22 20 18 VGS= 10V 16 14 VGS= 10V ID= 10A 1.6 1.4 VGS= 4.5V ID= 7.5A 1.2 1.0 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID= 10A 45 1E+01 40 1E+00 35 1E-01 125°C 30 IS (A) RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 25 125°C 1E-03 25°C 20 1E-02 1E-04 15 25°C 1E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO4496-HF (KO4496-HF) ■ Typical Characterisitics 10 Capacitance (pF) 8 VGS (Volts) 800 VDS= 15V ID= 10A 6 4 2 0 Ciss 600 400 200 Coss Crss 0 0 2 4 6 8 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 1000 10ms 100ms 10s VDS (Volts) 10 . Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 10 1 1 10 100 DC TJ(Max)=150°C TA=25°C 0.1 Power (W) ID (Amps) 1ms RDS(ON) limited 0.1 Zθ JA Normalized Transient Thermal Resistance 30 100µs 10 0.01 25 TJ(Max)=150°C TA=25°C 10µs 1 20 VDS (Volts) Figure 8: Capacitance Characteristics D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 100 0.0001 0.01 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 4 www.kexin.com.cn 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) 100 1000