MOSFET SMD Type P-Channel Enhancement MOSFET SI2337DS (KI2337DS) SOT-23 Unit: mm ■ Features +0.1 2.9 -0.1 +0.1 0.4 -0.1 ● VDS (V) =-80V ● RDS(ON) ＜ 270mΩ (VGS =-10V) +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● ID =-2.2A (VGS =-10V) 0.4 3 1 0.55 S ● RDS(ON) ＜ 303mΩ (VGS =-6V) 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 3 D 1.Gate 2.Source 2 0-0.1 S +0.1 0.97 -0.1 G 1 +0.1 0.38 -0.1 G +0.05 0.1 -0.01 3.Drain D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS -80 Gate-Source Voltage VGS ±20 Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Avalanche Current Single-Pulse Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Foot L=0.1mH Ta = 25℃ Ta = 70℃ ID -1.2 -1.75 -0.96 -7 IAS 11 6 EAS PD 0.76 1.6 0.48 t≤10 sec RthJA 166 steady State RthJF 50 TJ 150 Storage Temperature Range Tstg -55 to 150 A mJ 2.5 Junction Temperature Soldering Recommendations (Peak Temperature) V -2.2 IDM Unit W ℃/W ℃ 260 www.kexin.com.cn 1 MOSFET SMD Type P-Channel Enhancement MOSFET SI2337DS (KI2337DS) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage Static Drain-Source On-Resistance *1 On state drain current *1 Forward Transconductance *1 VGS(th) RDS(On) Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Gate Resistance Rg td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb Maximum Body-Diode Continuous Current IS Pulse Diode Forward Current *1 ISM Diode Forward Voltage VSD *1Pulse test: PW ≤ 300us duty cycle ≤ 2%. ■ Marking E7* www.kexin.com.cn Max -80 -1 VDS=0V, VGS=±20V VDS=VGS ID=-250μA Unit V -10 -2 μA ±100 nA -4 V VGS=-10V, ID=-1.2A 216 270 VGS=-6V, ID=-1.1A 242 303 -7 mΩ A 4.3 S 500 VGS=0V, VDS=-40V, f=1MHz pF 40 25 VGS=-10V, VDS=-40V, ID=-1.2A 11 17 7 11 VGS=-6V, VDS=-40V, ID=-1.2A 2.1 f=1MHz 4.8 nC 3.2 VGS=-10V, VDS=-40V, RL=42Ω,RGEN=1Ω ID=-0.96A tf Turn-On DelayTime Typ VDS=-80V, VGS=0V VDS=-15V, ID=-1.2A Ciss Min VDS=-80V, VGS=0V, TJ=55℃ VGS=-10V, VDS=-5V Coss Marking ID=-250μA, VGS=0V gFS Output Capacitance Turn-Off Fall Time Test Conditions ID(ON) Input Capacitance Turn-On DelayTime 2 Symbol VGS=-6V, VDS=-40V, RL=42Ω,RGEN=1Ω ID=-0.96A IF = 0.63 A, di/dt = 100 A/μs, TJ = 25 °C Ω 10 15 15 23 20 30 15 23 15 23 18 27 20 30 12 18 30 45 45 70 25 -2.1 -7 IS=-0.63A -0.8 nC ns 5 TC = 25 °C ns -1.2 A V MOSFET SMD Type P-Channel Enhancement MOSFET SI2337DS (KI2337DS) ■ Typical Characterisitics 7 7 V GS = 10 thru 6 V 6 5 I D - Drain Current (A) I D - Drain Current (A) 6 V GS = 5 V 4 3 5 4 3 T A = - 55 °C 2 2 1 1.00 2.00 3.00 T A = 125 °C 1 V GS = 4 V 0 0.00 T A = 25 °C 0 0.0 4.00 1.0 2.0 3.0 4.0 5.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 700 0.30 V GS = 6 V 0.25 C - Capacitance (pF) rDS(on) - On-Resistance (Ω) 600 0.20 V GS = 10 V 0.15 C iss 500 400 300 200 C rss 100 C oss 0 0.10 0 1 2 3 4 5 6 0 7 10 20 40 50 60 70 80 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 2.0 I D =1.2 A 1.8 8 rDS(on) - On-Resistance (Ω) (Normalized) V GS - Gate-to-Source Voltage (V) 30 V DS = 40 V 6 V DS = 64 V 4 2 I D = 1.2 A V GS = 10 V 1.6 1.4 V GS = 6 V 1.2 1.0 0.8 0.6 0 0 2 4 6 8 Qg - Total Gate Charge (nC) Gate Charge 10 12 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.kexin.com.cn 3 MOSFET SMD Type P-Channel Enhancement MOSFET SI2337DS (KI2337DS) ■ Typical Characterisitics 0.6 rDS(on) - Drain-to-Source On-Resistance (Ω) 20.0 I S - Source Current (A) 10.0 T J = 150 °C T J = 25 °C 1.0 0.1 0.00 I D = 1.2 A 0.5 0.3 0.1 0.2 0.4 0.6 0.8 1.0 3 1.2 16 3.4 14 I D = 250 µA 6 7 12 Power (W) 3.0 2.8 2.6 10 8 6 2.4 4 2.2 2 0 0.01 . - 25 0 25 50 75 100 125 150 0.1 TJ - Temperature (°C) 10 ID - D ra in C u rre n t (A ) 10 100 Single Pulse Power, Junction-to-Ambient 100 *Limited by DS(on) r 1 ms 1 10 ms 100 ms 0.1 1 s 10 s T A = 25 °C Single Pulse 0.01 dc 0.001 0 .1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.kexin.com.cn 1 Time (sec) Threshold Voltage 4 5 On-Resistance vs. Gate-to-Source Voltage 3.6 3.2 4 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) VGS(th) (V) T A = 25 °C 0.2 Source-Drain Diode Forward Voltage 2.0 - 50 T A = 125 °C 0.4 1000 MOSFET SMD Type P-Channel Enhancement MOSFET SI2337DS (KI2337DS) ■ Typical Characterisitics 2.5 2.8 2.4 2.0 1.5 1.6 Power ID - Drain Current (A) 2.0 1.2 1.0 0.8 0.5 0.4 0.0 0 25 50 75 100 125 150 0.0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Power Derating Current Derating* IC - Peak Avalanche Current (A) 10 TA 1 1.0E-6 L IA BV - V DD 10.0E-6 100.0E-6 1.0E-3 10.0E-3 TA - Time In Avalanche (sec) Single Pulse Avalanche Capability www.kexin.com.cn 5 MOSFET SMD Type P-Channel Enhancement MOSFET SI2337DS (KI2337DS) ■ Typical Characterisitics 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 P DM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 166 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (sec) 10 -1 Normalized Thermal Transient Impedance, Junction-to-Case 6 www.kexin.com.cn 1