IND/MED/MIL Complete Memory Solutions for the Industrial Market Over 80% of ISSI’s business is in markets such as Automotive, Industrial and Communication Infrastructure, where customers demand high quality product with long life cycles. Our company strategy is based around the requirements of these customers. By offering long term support and high quality on ALL of our products, we reduce the total cost for our customers. ► DRAM PRODUCT LINE • Long-term support for all ISSI DRAMs: 7-10 years typical • Provide complete portfolio of DRAM’s (SDR, DDR, DDR2, DDR3, DDR4, mSDR, mDDR, LPDDR2) • Long-term roadmaps on all 3.3V SDRAM in all densities up to 512Mb, including x32 products • Mobile DRAM families for power sensitive applications • EDO/FP Asynchronous DRAM • Com. (0ºC to +70ºC), Ind. (-40ºC to +85ºC) and Auto. (-40ºC to +85ºC/+105ºC/+115ºC) temperature grade options • Copper lead-frame TSOP for enhanced reliability in demanding environments • Both Lead-free (RoHS) and Leaded BGA support • Known Good Die (KGD) solutions ► SRAM PRODUCT LINE • Long-term support for all ISSI SRAMs: 7-10 years typical • Legacy Asynchronous SRAMs: 64Kb-8Mb, including 5V options • High Speed Asynchronous SRAMs: 1Mb-16Mb, x8, x16, x32 options, (1Mb-8Mb with ECC) • Low Power Asynchronous SRAMs: 1Mb-16Mb, Ultra-Low Power • Pseudo SRAMs: 4Mb-64Mb, PSRAM and CRAM options • Synchronous SRAMs: Up to 72Mb, with QUAD SRAM/DDRII options, (4Mb with ECC) • Ind. (-40oC to +85oC) and Auto. (-40oC to +125oC) temperatures • Provide wafer level (die) solutions Nov. 2014 • 1623 Buckeye Dr. Milpitas, CA. 95035 • 408.969.6600 • [email protected] • www.issi.com DRAM 3.3V, 5V EDO/FP 4M 16M ■ ■ ■ 3.3V SDRAM 32M 64M 128M 256M 512M ■ ■ ■ ■ ■ ■ ■ ■ ■ 2.5V DDR 1.8V DDR2 1.35V & 1.5V DDR3/DDR3L 1G 2G ■ ■ ■ ■ 1.2V (2.5V) DDR4 4G 8G ■ ■ ■ ■ Mobile DRAM 1.8V/2.5V/3.3V Mobile SDRAM ■ ■ ■ ■ ■ 1.8V Mobile DDR ■ ■ ■ ■ ■ ■ ■ 1.2V (1.8V) LPDDR2 ■ ■ ■ 1.2V (1.8V) LPDDR3 ■ ■ ■ ■ Industrial/Automotive Temperature, Long Term Support, Leaded/Lead Free STATUS ■ ■ Production Asynchronous SRAMs 64K ■ ■ Roadmap 256K 512K Under Consideration 1M 2M ■ ■ ■ Asynchronous ■ ■ ECC ECC Ultra Low Power ■ ■ ■ 5V High Speed ■ ■ 3M ■ 4M 8M ■ ■ ■ 2M 4M Standard/No-Wait(ZBT) ■ ECC ■ 8M ECC ■ ■ ■ ■ ■ ■ ■ ■ ■ 576M 1G 2G ■ ■ ■ ■ ■ ■ (Compatible to QDR-II™) ■ ■ ■ ■ DDRII ■ ■ ■ ■ QUADP/DDRIIP ■ ■ ■ ■ (Compatible to QDR-II+™) ■ 16M 36M 72M 144M 288M ■ Synchronous QUAD 32M 64M ECC Pseudo SRAMS High Speed Memory 16M ■ RLDRAM2 RLDRAM3 ■ Industrial/Automotive Temperature, Long Term Support, Leaded/Lead Free STATUS ■ Production ■ Roadmap ■ Under Consideration Nov. 2014 • 1623 Buckeye Dr. Milpitas, CA. 95035 • 408.969.6600 • [email protected] • www.issi.com ► FLASH PRODUCT LINE • Industry Standard Serial and Parallel Flash • Densities: 256K - 256Mb • Interface Serial: SPI, Dual/Quad SPI, Multi-I/O SPI, QPI, DTR-SPI Parallel: FWH/ISA/x29GL Page-mode • Voltage: 3V, 2.5V, 1.8V Serial Flash 256K 512K 1M 2M 4M 8M 16M 32M 64M 128M 256M 512M 1G 2.5/3V ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 512K 1M 4M 32M 64M 128M 256M 512M 1G ■ ■ ■ ■ ■ ■ ■ ■ 1.8V Parallel Flash (ISA) 3V Uniform Block *1 3V IS29GLSeries Page Mode 1.8V IS29GLSeries Page ■ ■ ■ *1,*2 *2 *2 ■ ■ ■ Mode SLC NAND 3V 1G 2G 4G 8G ■ ■ ■ ■ options *3 *3 *3 *4 1.8V ■ ■ ■ ■ *3 *3 *3 *4 x8 and x16 x8 and x16 options Industrial/Automotive Temperature, Long Term Support, Leaded/Lead Free STATUS ■ Production ■ Roadmap ■ Under Consideration *1 - Top/Bottom, *2 - High/Low, *3 - 1 or 4 bit ECC, *4 - 4bit ECC CONTACT INFORMATION: 1623 Buckeye Drive, Milpitas, CA 95035 Tel: 408-969-6600 | [email protected] | [email protected] | [email protected] | [email protected] | [email protected] | www.issi.com © 2014, ISSI, Inc. All Rights Reserved. ISSI is a registered trademark of Integrated Silicon Solution, Inc.