RENESAS 2SK2800

2SK2800
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1035-0900
(Previous: ADE-208-513G)
Rev.9.00
Sep 07, 2005
Features
• Low on-resistance
RDS(on) = 15 mΩ typ.
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
1. Gate
2. Drain
(Flange)
3. Source
G
1
Rev.9.00 Sep 07, 2005 page 1 of 7
2
3
S
2SK2800
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
Symbol
VDSS
VGSS
ID
Ratings
60
±20
40
160
40
40
137
50
150
–55 to +150
ID(pulse)Note1
IDR
IAP Note 3
EAR Note 3
Pch Note 2
Tch
Tstg
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
4. Pulse test
Rev.9.00 Sep 07, 2005 page 2 of 7
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
60
±20
—
—
1.5
—
—
20
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
15
25
35
1500
720
200
20
180
200
200
0.95
70
Max
—
—
±10
10
2.5
20
40
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
V
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10V
ID = 20 A, VGS = 10V Note4
ID = 20 A, VGS = 4 V Note4
ID = 20 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 20 A, RL = 1.5 Ω,
VGS = 10 V
IF = 40 A, VGS = 0
IF = 40 A, VGS = 0
diF/ dt =50 A/µs
2SK2800
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
Drain Current ID (A)
300
75
50
25
50
40
50
100
150
30
DC
10
Op
er
3
=
10
1
ms
(1
sh
ati
on
ot)
(T
c=
Operation in
this area is
limited by RDS(on)
0.1
0.1
200
25
°C
)
3
1
30
10
100
Typical Output Characteristics
Typical Transfer Characteristics
50
10 V
6V
4.5 V
4V
Pulse Test
3.5 V
20
10
2
4
6
8
VDS = 10 V
Pulse Test
40
30
Tc = 75°C
25°C
20
–25°C
10
0
10
1
2
3
4
5
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
1.6
1.2
ID = 50 A
0.8
0.4
20 A
10 A
4
8
12
16
20
Gate to Source Voltage VGS (V)
Rev.9.00 Sep 07, 2005 page 3 of 7
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Voltage VDS (V)
2.0
0
0.3
Drain to Source Voltage VDS (V)
30
0
Ta = 25°C
Case Temperature TC (°C)
VGS = 3 V
Drain to Source Saturation Voltage
VDS (on) (V)
PW
10
µs
0µ
s
1m
s
10
100
0.3
0
Drain Current ID (A)
1000
Drain Current ID (A)
Channel Dissipation Pch (W)
100
0.5
Pulse Test
0.2
0.1
0.05
VGS = 4 V
0.02
10 V
0.01
0.005
1
2
5
10
20
Drain Current ID (A)
50
100
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
2SK2800
0.05
Pulse Test
0.04
ID = 20 A
0.03
10 A
VGS = 4 V
0.02
50 A
10, 20 A
10 V
0.01
0
–40
0
40
80
120
160
Tc = –25°C
50
25°C
20
75°C
10
5
2
VDS = 10 V
Pulse Test
1
1
10
5
2
20
50
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
100
5000
1000
VGS = 0
f = 1 MHz
500
Capacitance C (pF)
Reverse Recovery Time trr (ns)
100
200
100
50
20
0.3
1
3
10
30
Ciss
1000
500
Coss
200
Crss
100
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
10
0.1
2000
50
0
100
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
16
VDD = 10 V
25 V
50 V
12
VGS
VDS
40
8
20
4
VDD = 50 V
25 V
10 V
0
8
16
24
32
Gate Charge Qg (nc)
Rev.9.00 Sep 07, 2005 page 4 of 7
0
40
1000
Switching Time t (ns)
80
60
20
ID = 40 A
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Switching Characteristics
100
300
td(off)
100
tf
tr
30
td(on)
10
3
1
0.1
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
0.3
1
3
10
30
Drain Current ID (A)
100
2SK2800
40
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
(A)
50
Reverse Drain Current IDR
Reverse Drain Current vs.
Source to Drain Voltage
10 V
30
5V
VGS = 0, –5 V
20
10
Pulse Test
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
200
IAP= 40 A
VDD = 25 V
duty < 1 %
Rg > 50 Ω
160
120
80
40
0
25
VSD (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 2.5°C/W, Tc = 25°C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
o
h
1s
0.03
0.01
10 µ
D=
PW
T
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (S)
Avalanche Test Circuit
VDS
Monitor
PW
T
Avalanche Waveform
L
EAR =
1
2
• L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
D. U. T
VDS
VDD
ID
Vin
15 V
50 Ω
0
Rev.9.00 Sep 07, 2005 page 5 of 7
VDD
2SK2800
Switching Time Test Circuit
Switching Time Waveforms
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50 Ω
VDD
= 30 V
Vout
10%
10%
10%
90%
td(on)
Rev.9.00 Sep 07, 2005 page 6 of 7
tr
90%
td(off)
tf
2SK2800
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
SC-46
PRSS0004AC-A
TO-220AB / TO-220ABV
1.8g
Unit: mm
2.79 ± 0.2
11.5 Max
10.16 ± 0.2
9.5
φ 3.6
1.26 ± 0.15
15.0 ± 0.3
18.5 ± 0.5
1.27
6.4
+0.2
–0.1
8.0
4.44 ± 0.2
+0.1
–0.08
7.8 ± 0.5
0.76 ± 0.1
14.0 ± 0.5
2.7 Max
1.5 Max
0.5 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
Ordering Information
Part Name
2SK2800-E
Quantity
500 pcs
Shipping Container
Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.9.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0